Spin-polarization and electronic properties of half-metallic Heusler alloys calculated from first-principles

Half-metallic Heusler alloys are amongst the most promising materials for future magnetoelectronic applications. We review some recent results on the electronic properties of these compounds. The origin of the gap in these half-metallic alloys and its connection to the magnetic properties are well understood. Changing the lattice parameter shifts slightly the Fermi level. Spin-orbit coupling induces states within the gap but the alloys keep a very high degree of spin-polarization at the Fermi level. Small degrees of doping and disorder as well as defects with low formation energy have little effect on the properties of the gap, while temperature effects can lead to a quick loss of half-metallicity. Finally we discuss two special issues; the case of quaternary Heusler alloys and the half-metallic ferrimagnets

First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance

We determine from first-principles the Curie temperature Tc for bulk Co in the hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bcc and bct Fe. For bcc-Co, Tc=1420 K is predicted. This would be the highest Curie temperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunnel junctions offer high magnetoresistance ratios even at room temperature. The Curie temperatures are calculated by mapping ab initio results to a Heisenberg model, which is solved by a Monte Carlo method

Multilayers of Zinc-Blende Half-Metals with Semiconductors

We report on first-principles calculations of multilayers of zinc-blende half-metallic ferromagnets CrAs and CrSb with III-V and II-VI semiconductors, in the [001] orientation. We examine the ideal and tetragonalised structures, as well as the case of an intermixed interface. We find that, as a rule, half-metallicity can be conserved throughout the heterostructures, provided that the character of the local coordination and bonding is not disturbed. At the interfaces with semiconductors, we describe a mechanism that can give also a non-integer spin moment per interface transition atom, and derive a simple rule to evaluate it

Spin injection from Fe into Si(001): ab initio calculations and role of the Si complex band structure

We study the possibility of spin injection from Fe into Si(001), using the Schottky barrier at the Fe/Si contact as tunneling barrier. Our calculations are based on density-functional theory for the description of the electronic structure and on a Landauer-Buttiker approach for the current. The current-carrying states correspond to the six conduction band minima of Si, which, when projected on the (001) surface Brillouin zone (SBZ), form five conductance hot spots: one at the SBZ center and four symmetric satellites. The satellites yield a current polarization of about 50%, while the SBZ center can, under very low gate voltage, yield up to almost 100%, showing a zero-gate anomaly. This extremely high polarization is traced back to the symmetry mismatch of the minority-spin Fe wavefunctions to the conduction band wavefunctions of Si at the SBZ center. The tunneling current is determined by the complex band structure of Si in the [001] direction, which shows qualitative differences compared to that of direct-gap semiconductors. Depending on the Fermi level position and Schottky barrier thickness, the complex band structure can cause the contribution of the satellites to be orders of magnitude higher or lower than the central contribution. Thus, by appropriate tuning of the interface properties, there is a possibility to cut off the satellite contribution and to reach high injection efficiency. Also, we find that a moderate strain of 0.5% along the [001] direction is sufficient to lift the degeneracy of the pockets so that only states at the zone center can carry current

Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions

We present {\it ab initio} calculations of the spin-dependent electronic transport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situation of a spin-injection experiment. We follow a ballistic Landauer-B\"uttiker approach for the calculation of the spin-dependent dc conductance in the linear-responce regime, in the limit of zero temperature. We show that the bulk band structure of the leads and of the semiconductor, and even more the electronic structure of a clean and abrupt interface, are responsible for a current polarisation and a magnetoresistance ratio of almost the ideal 100%, if the transport is ballistic. In particular we study the significance of the transmission resonances caused by the presence of two interfaces.Comment: 13 pages, 9 figure

Ferromagnetic spin coupling of 2p-impurities in band insulators stabilized by intersite Coulomb interaction: Nitrogen-doped MgO

For a nitrogen dimer in insulating MgO, a ferromagnetic coupling between spin-polarized $2p$-holes is revealed by calculations based on the density functional theory amended by an on-site Coulomb interaction and corroborated by the Hubbard model. It is shown that the ferromagnetic coupling is facilitated by a T-shaped orbital arrangement of the $2p$-holes, which is in its turn controlled by an intersite Coulomb interaction due to the directionality of the $p$-orbitals. We thus conjecture that this interaction is an important ingredient of ferromagnetism in band insulators with $2p$ dopants.Comment: Accepted for publication in Physical Review Letter

Spin-caloric transport properties of cobalt nanostructures: spin disorder effects from first principles

The fundamental aspects of spin-dependent transport processes and their interplay with temperature gradients, as given by the spin Seebeck coefficient, are still largely unexplored and a multitude of contributing factors must be considered. We used density functional theory together with a Monte-Carlo-based statistical method to simulate simple nanostructures, such as Co nanowires and films embedded in a Cu host or in vacuum, and investigated the influence of spin-disorder scattering on electron transport at elevated temperatures. While we show that the spin-dependent scattering of electrons due to temperature induced disorder of the local magnetic moments contributes significantly to the resistance, thermoelectric and spin-caloric transport coefficients, we also conclude that the actual magnitude of these effects cannot be predicted, quantitatively or qualitatively, without such detailed calculations.Comment: 10 pages, 6 figure

Scanning tunneling microscopy of surfaces of half-metals: an ab-initio study on NiMnSb(001)

We present a first-principles study of the unreconstructed (001) surfaces of the half-metallic ferromagnet NiMnSb. Both terminations (MnSb and Ni) are considered. We find that half-metallicity is lost at the surfaces. After a discussion of the geometric relaxations and the spin-polarized surface band structure, we focus on topography images which are expected to be found with spin-polarized scanning tunneling microscopy. For the MnSb-terminated surface we find that only the Sb atoms are visible, reflecting a geometric buckling caused by relaxations. For the Ni-terminated surface we find a strong contrast between the images of forward and reverse tip-sample-bias of 0.5 eV, as well as a stripe-like image for reverse bias. We interpret these findings in terms of highly directional surface states which are formed in the spin-down gap region.Comment: Submitted to J. Phys. D: Appl. Phy