Field Emission of ITO-Coated Vertically Aligned Nanowire Array

An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope

Effect of Temperature Gradient Direction in the Catalyst Nanoparticle on CNTs Growth Mode

To improve the understanding on CNT growth modes, the various processes, including thermal CVD, MP-CVD and ECR-CVD, have been used to deposit CNTs on nanoporous SBA-15 and Si wafer substrates with C2H2 and H2 as reaction gases. The experiments to vary process parameter of ΔT, defined as the vector quantities of temperature at catalyst top minus it at catalyst bottom, were carried out to demonstrate its effect on the CNT growth mode. The TEM and TGA analyses were used to characterize their growth modes and carbon yields of the processes. The results show that ΔT can be used to monitor the temperature gradient direction across the catalyst nanoparticle during the growth stage of CNTs. The results also indicate that the tip-growth CNTs, base-growth CNTs and onion-like carbon are generally fabricated under conditions of ΔT > 0, <0 and ~0, respectively. Our proposed growth mechanisms can be successfully adopted to explain why the base- and tip-growth CNTs are common in thermal CVD and plasma-enhanced CVD processes, respectively. Furthermore, our experiments have also successfully demonstrated the possibility to vary ΔT to obtain the desired growth mode of CNTs by thermal or plasma-enhanced CVD systems for different applications

A Variable Temperature Scanning Tunnelling Microscopy Study of the Electronic Response of the Sn/Si(111) α Surface to Extrinsic Defects

The α-phase of Sn/Si(111) surface has been studied with variable temperature STM. When temperature is reduced this system undergoes a phase transition from â 3 à â 3 R30° to 2â 3 à â 3-like. The low temperature phase is characterised by a one-dimensional electronic perturbation of the â 3 surface accompanied by a modulation of the density of the substitutional Si defects having the same periodicity, namely a Defect Density Wave. At room temperature, STM shows that Si defects are slightly shifted off the T4 site. This local break of the C3Ï symmetry is also characteristic, at larger scale, of the low temperature phase. The two observations must be intimately related