Electric-Field Noise above a Thin Dielectric Layer on Metal Electrodes

The electric-field noise above a layered structure composed of a planar metal electrode covered by a thin dielectric is evaluated and it is found that the dielectric film considerably increases the noise level, in proportion to its thickness. Importantly, even a thin (mono) layer of a low-loss dielectric can enhance the noise level by several orders of magnitude compared to the noise above a bare metal. Close to this layered surface, the power spectral density of the electric field varies with the inverse fourth power of the distance to the surface, rather than with the inverse square, as it would above a bare metal surface. Furthermore, compared to a clean metal, where the noise spectrum does not vary with frequency (in the radio-wave and microwave bands), the dielectric layer can generate electric-field noise which scales in inverse proportion to the frequency. For various realistic scenarios, the noise levels predicted from this model are comparable to those observed in trapped-ion experiments. Thus, these findings are of particular importance for the understanding and mitigation of unwanted heating and decoherence in miniaturized ion traps.Comment: 27 page

Cryogenic silicon surface ion trap

Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single $^{40}$Ca$^+$ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as $\dot{\bar{n}}=$ 0.33 phonons/s at an ion-electrode distance of 230 $\mu$m. These results open many new avenues to arrays of micro-fabricated ion traps.Comment: 12 pages, 4 figures, 1 tabl

Experiment towards continuous-variable entanglement swapping: Highly correlated four-partite quantum state

We present a protocol for performing entanglement swapping with intense pulsed beams. In a first step, the generation of amplitude correlations between two systems that have never interacted directly is demonstrated. This is verified in direct detection with electronic modulation of the detected photocurrents. The measured correlations are better than expected from a classical reconstruction scheme. In the entanglement swapping process, a four--partite entangled state is generated. We prove experimentally that the amplitudes of the four optical modes are quantum correlated 3 dB below shot noise, which is due to the potential four--party entanglement.Comment: 9 pages, 10 figures, update of references 9 and 10; minor inconsistency in notation removed; format for units in the figures change

88Sr+ ion trapping techniques and technologies for quantum information processing

EThOS - Electronic Theses Online ServiceGBUnited Kingdo