53 research outputs found

    Spin caloritronics in magnetic tunnel junctions: Ab initio studies

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    This Letter presents ab initio calculations of the magneto-thermoelectric power (MTEP) and of the spin-Seebeck coefficient in MgO based tunnel junctions with Fe and Co leads. In addition, the normal thermopower is calculated and gives for pure Fe and Co an quantitative agreement with experiments. Consequently, the calculated values in tunnel junctions are a good estimation of upper limits. In particular, spin-Seebeck coefficients of more than 100 \mu V/K are possible. The MTEP ratio exceed several 1000% and depends strongly on temperature. In the case of Fe leads the MTEP ratio diverges even to infinity at certain temperatures. The spin-Seebeck coefficient as a function of temperature shows a non-trivial dependence. For Fe/MgO/Fe even the sign of the coefficient changes with temperature.Comment: 6 pages, 5 figure

    Ab initio studies of the tunneling magneto-Seebeck effect: influence of magnetic material

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    We found a strong influence of the composition of the magnetic material on the temperature dependence of the tunneling magneto-Seebeck effect in MgOMgO based tunnel junctions. We use \textit{ab initio} alloy theory to consider different FexCo1xFe_xCo_{1-x} alloys for the ferromagnetic layer. Even a small change of the composition leads to strong changes in the magnitude or even in the sign of the tunneling magneto-Seebeck effect. This can explain differences between recent experimental results. In addition, changing the barrier thickness from six to ten monolayers of MgOMgO leads also to a non-trivial change of the temperature dependence. Our results emphasize that the tunneling magneto-Seebeck effect depends very crucially and is very sensitive to material parameters and show that further experimental and theoretical investigations are necessary

    Tailoring magnetoresistance through rotating Ni particles

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    We present \textit{ab initio} studies for different Ni nanocontacts and show changes in the conductance of such constrictions due to atomic rearrangements in the contact. In particular we consider a Ni particle and show that the magnetoresistance can change from a few to 50% and can even reverse sign as a function of the contact area formed between the particle and the leads.Comment: 10 pages, 4 figures, 7 tables; corrected typos in reference

    Influence of interface termination on the magneto-Seebeck effect in MgO based tunnel junctions

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    On an ab initio level, we investigate the recently observed magneto-Seebeck effect in MgO based tunnel junctions. In particular, we considered ordered CoFe alloys as lead material. Next to the MgO barrier, there are different possible terminations of the CoFe alloy due to the assumed ordered alloy. These results show a strong influence of the termination on the temperature dependence of the magneto-Seebeck effect. In addition, we use a simple model to account for randomly ordered alloys. We propose, that by a controlled treatment of the CoFe/MgO interface the magneto-Seebeck effect can be tuned experimentally

    Seebeck Effect in Magnetic Tunnel Junctions

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    Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, i.e., the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In that respect, it is the analog to the tunneling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configuration are in the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. Experimentally, we realized 8.8 % magneto-Seebeck effect, which results from a voltage change of about -8.7 {\mu}V/K from the antiparallel to the parallel direction close to the predicted value of -12.1 {\mu}V/K.Comment: 16 pages, 7 figures, 2 table
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