Mid-infrared n-Ge on Si Plasmonic Based Microbolometer Sensors

The detection and amplification of molecular absorption lines from a chemical weapons simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. A free-standing Si0.25Ge0.75 microbolometer detector with n-Ge plasmonic antenna is demonstrated as an integrated mid-infrared plasmonic sensor

Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films

Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the $10^{17}$ to $10^{19}$ cm$^{-3}$ range, by infrared spectroscopy, first principle calculations, pump-probe spectroscopy and dc transport measurements to determine the relation between plasma edge and carrier density and to quantify mid-infrared plasmon losses. We demonstrate that the unscreened plasma frequency can be tuned in the 400 - 4800 cm$^{-1}$ range and that the average electron scattering rate, dominated by scattering with optical phonons and charged impurities, increases almost linearly with frequency. We also found weak dependence of losses and tunability on the crystal defect density, on the inactivated dopant density and on the temperature down to 10 K. In films where the plasma was optically activated by pumping in the near-infrared, we found weak but significant dependence of relaxation times on the static doping level of the film. Our results suggest that plasmon decay times in the several-picosecond range can be obtained in n-type germanium thin films grown on silicon substrates hence allowing for underdamped mid-infrared plasma oscillations at room temperature.Comment: 18 pages, 10 figure

n-Ge on Si for Mid-Infrared Plasmonic Sensors

The detection and amplification of molecular absorption lines from a mustard gas simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. Approaches to integrated sensors will be presented along with a review of n-Ge compared to other mid-infrared plasmonic materials

Heavily-doped Germanium on Silicon with Activated Doping Exceeding 1020 cm−3 as an Alternative to Gold for Mid-infrared Plasmonics

Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser thermal annealing to demonstrate activated doping levels >1020 cm-3 which allows most of the 3 to 20 μm mid-infrared sensing window to be covered with enhancements comparable to gold plasmonics

Modeling of second harmonic generation in hole-doped silicon-germanium quantum wells for mid-infrared sensing

The development of Ge and SiGe chemical vapor deposition techniques on silicon wafers has enabled the integration of multi-quantum well structures in silicon photonics chips for nonlinear optics with potential applications to integrated nonlinear optics, however research has focused up to now on undoped quantum wells and interband optical excitations. In this work, we present model calculations for the giant nonlinear coefficients provided by intersubband transitions in hole-doped Ge/SiGe and Si/SiGe multi-quantum wells. We employ a valence band-structure model for Si1-xGex to calculate the confined hole states of asymmetric-coupled quantum wells for second-harmonic generation in the mid-infrared. We calculate the nonlinear emission spectra from the second-order susceptibility tensor, including the particular vertical emission spectra of valence-band quantum wells. Two possible nonlinear mid-infrared sensor architectures, one based on waveguides and another based on metasurfaces, are described as perspective application

Second Harmonic Generation in Germanium Quantum Wells for Nonlinear Silicon Photonics

econd-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken center-of-inversion symmetry in their unit cell display high SHG efficiency, however, the silicon-foundry compatible group IV semiconductors (Si, Ge) are centrosymmetric, thereby preventing full integration of second-order nonlinearity in silicon photonics platforms. Here we demonstrate strong SHG in Ge-rich quantum wells grown on Si wafers. Unlike Si-rich epilayers, Ge-rich epilayers allow for waveguiding on a Si substrate. The symmetry breaking is artificially realized with a pair of asymmetric coupled quantum wells (ACQW), in which three of the quantum-confined states are equidistant in energy, resulting in a double resonance for SHG. Laser spectroscopy experiments demonstrate a giant second-order nonlinearity at mid-infrared pump wavelengths between 9 and 12 μm. Leveraging on the strong intersubband dipoles, the nonlinear susceptibility χ(2) almost reaches 105 pm/V, 4 orders of magnitude larger than bulk nonlinear materials for which, by the Miller’s rule, the range of 10 pm/V is the norm

Characterization of integrated waveguides by atomic-force-microscopy-assisted mid-infrared imaging and spectroscopy

A novel spectroscopy technique to enable the rapid characterization of discrete mid-infrared integrated photonic waveguides is demonstrated. The technique utilizes lithography patterned polymer blocks that absorb light strongly within the molecular fingerprint region. These act as integrated waveguide detectors when combined with an atomic force microscope that measures the photothermal expansion when infrared light is guided to the block. As a proof of concept, the technique is used to experimentally characterize propagation loss and grating coupler response of Ge-on-Si waveguides at wavelengths from 6 to 10 µm. In addition, when the microscope is operated in scanning mode at fixed wavelength, the guided mode exiting the output facet is imaged with a lateral resolution better than 500 nm i.e. below the diffraction limit. The characterization technique can be applied to any mid-infrared waveguide platform and can provide non-destructive in-situ testing of discrete waveguide components

Ge-on-Si Based Mid-infrared Plasmonics

In the last decade, silicon photonics has undergone an impressive development driven by an increasing number of technological applications. Plasmonics has not yet made its way to the microelectronic industry, mostly because of the lack of compatibility of typical plasmonic materials with foundry processes. In this framework, we have developed a plasmonic platform based on heavily n-doped Ge grown on silicon substrates. We developed growth protocols to reach n-doping levels exceeding 1020 cm-3, allowing us to tune the plasma wavelength of Ge in the 3-15 μm range. The plasmonic resonances of Ge-on-Si nanoantennas have been predicted by simulations, confirmed by experimental spectra and exploited for molecular sensing. Our work represents a benchmark for group-IV mid-IR plasmonics

The state of soils in Europe

This report delves into the intricate interplay between drivers, pressures and impacts on soil in the 32 Member States of the European Environment Agency (EEA), along with six cooperating countries from the West Balkans, Ukraine and UK, shedding light on the multifaceted challenges facing soil conservation efforts. Our analysis shows the complex interactions among various factors, both anthropogenic and natural, shaping soil degradation processes and their subsequent consequences. We highlight key findings, including the significant impacts of soil degradation on agriculture, ecosystem resilience, water quality, biodiversity, and human health, underscoring the urgent need for comprehensive soil management strategies. Moreover, our examination of citizen science initiatives underlines the importance of engaging the public in soil monitoring and conservation efforts. This work emphasises the policy relevance of promoting sustainable soil governance frameworks, supported by research, innovation, and robust soil monitoring schemes, to safeguard soil health and ensure the long-term resilience of ecosystems.JRC.D.3 - Land Resources and Supply Chain Assessment