Optical matrix elements in tight-binding approach of hydrogenated Si nanowires

The dependence of the imaginary part of the dielectric function on the quantum confinement within two different schemes: intra-atomic and interatomic optical matrix elements are applied and compared. The optical spectra of Si nanowires are studied by means of a semi-empirical sp3s* tight-binding supercell model. The surface dangling bonds are passivated by hydrogen atoms. The results show that although the intra-atomic matrix elements are small in magnitude, the interference between these terms and the interatomic matrix elements contributes with nearly 25% of the total absorption. Thus, a quantitative treatment of nanostructures may not be possible without the inclusion of intra-atomic matrix elements

Phonon optical modes and electronic properties in diamond nanowires

A local bond-polarization model based on the displacement–displacement Green’s function and the Born potential are applied to study the confined optical phonons and Raman scattering of diamond nanowires (DNWs). Also, the electronic band structure of DNWs are investigated by means of a semi-empirical tightbinding approach and compared with density functional theory within local density approximation. The supercell technique is applied to model DNWs along [0 0 1] direction preserving the crystalline diamond atomic structure. The results of both phonons and electrons show a clear quantum confinement signature. Moreover, the highest energy Raman peak shows a shift towards low frequencies respect to the bulk crystalline diamond, in agreement with experimental data

Computational simulation of the effects of oxygen on the electronic states of hydrogenated 3C-porous SiC

Abstract A computational study of the dependence of the electronic band structure and density of states on the chemical surface passivation of cubic porous silicon carbide (pSiC) was performed using ab initio density functional theory and the supercell method. The effects of the porosity and the surface chemistry composition on the energetic stability of pSiC were also investigated. The porous structures were modeled by removing atoms in the [001] direction to produce two different surface chemistries: one fully composed of silicon atoms and one composed of only carbon atoms. The changes in the electronic states of the porous structures as a function of the oxygen (O) content at the surface were studied. Specifically, the oxygen content was increased by replacing pairs of hydrogen (H) atoms on the pore surface with O atoms attached to the surface via either a double bond (X = O) or a bridge bond (X-O-X, X = Si or C). The calculations show that for the fully H-passivated surfaces, the forbidden energy band is larger for the C-rich phase than for the Si-rich phase. For the partially oxygenated Si-rich surfaces, the band gap behavior depends on the O bond type. The energy gap increases as the number of O atoms increases in the supercell if the O atoms are bridge-bonded, whereas the band gap energy does not exhibit a clear trend if O is double-bonded to the surface. In all cases, the gradual oxygenation decreases the band gap of the C-rich surface due to the presence of trap-like states.</jats:p

Chaotic block cryptosystem using high precision approaches to tent map

This paper presents the implementation and evaluation of a block cryptosystem based in chaotic maps. The noise function used in this cryptosystem is an approximation to the chaotic tent map, and for this reason, it is named pseudo chaotic tent map (PCT map). PCT map has been analyzed and evaluated using the statistical mechanic tools such as: bifurcation diagram, Lyapunov exponent and invariant distribution. In order to determine the influence of PCT map in the syntactic, semantic and statistic of a message, this map has been used on the non-balanced and dynamic network proposed by Kocarev. Cryptosystem has been evaluated using concepts of the information theory, such as: entropy and mutual information. The randomness of the produced cryptograms has been evaluated using the statistical tests suite of NIST

A current mode CMOS noise generator using multiple Bernoulli maps

This paper presents the analysis and design of a chaotic noise generator using statistical mechanic tools. The noise generator is a CMOS analog circuit operating in current mode, which generates chaotic signals using four Bernoulli chaotic maps with topological dependency on each other. They are randomly or deterministically selected to be applied by iterating an initial condition. These variants of the Bernoulli map are different in their slope and attenuation process. The initial condition can be considered as the secret key in the generation of chaotic noise. The advantage of this chaotic noise generator is that its’ control parameter can be selected within an interval greater than the one obtained when basic Bernoulli map is used

Theoretical prediction of two-dimensional II-V compounds

Graphene has attracted significant attention as a pioneer of two-dimensional zero gap semiconductors, but the development of new two-dimensional materials with a finite band gap has been actively pursued. In this study, the structural stability of double bilayers (DBs) of group II-V compounds (II: Be, Zn, and Cd; V: P, As, and Sb) has been systematically investigated using first-principles calculations based on density functional theory. The thermodynamic calculations have confirmed that BeP, BeAs, ZnP, and ZnAs can be produced through exothermic reactions from their constituent bulk systems. It has also been confirmed that all the compounds have phonon dynamical stabilities. Only CdP and CdAs have been found to have an AB-stacked DB structure with threefold symmetry, while the other compounds have AB′-stacked DB structure with broken symmetry. The difference in atomic radii between group II and group V results in the so-called size effect, which determines the stacking pattern. The structural stability of II-V DB thin films is explained by analogy with the surface structural stability of compound semiconductors: The change in the atomic arrangement of the DB structure alters the electronegativity of the surface orbitals of the II-V thin film, which does not result in any unsaturated bonds, i.e., no metallic bands across the Fermi level appear. The various DB II-V compounds proposed in this study will join the ranks of atomic-level 2D semiconductor materials.journal articl

Theory of Raman Scattering by Phonons in Germanium Nanostructures

Within the linear response theory, a local bond-polarization model based on the displacement–displacement Green’s function and the Born potential including central and non-central interatomic forces is used to investigate the Raman response and the phonon band structure of Ge nanostructures. In particular, a supercell model is employed, in which along the [001] direction empty-column pores and nanowires are constructed preserving the crystalline Ge atomic structure. An advantage of this model is the interconnection between Ge nanocrystals in porous Ge and then, all the phonon states are delocalized. The results of both porous Ge and nanowires show a shift of the highest-energy Raman peak toward lower frequencies with respect to the Raman response of bulk crystalline Ge. This fact could be related to the confinement of phonons and is in good agreement with the experimental data. Finally, a detailed discussion of the dynamical matrix is given in the appendix section