2,002 research outputs found
Eta cocycles, relative pairings and the Godbillon-Vey index theorem
We prove a Godbillon-Vey index formula for longitudinal Dirac operators on a
foliated bundle with boundary; in particular, we define a Godbillon-Vey eta
invariant on the boundary-foliation; this is a secondary invariant for
longitudinal Dirac operators on type-III foliations. Moreover, employing the
Godbillon-Vey index as a pivotal example, we explain a new approach to higher
index theory on geometric structures with boundary. This is heavily based on
the interplay between the absolute and relative pairings of K-theory and cyclic
cohomology for an exact sequence of Banach algebras which in the present
context takes the form , with J dense and
holomorphically closed in the C^*-algebra of the foliation and B depending only
on boundary data. Of particular importance is the definition of a relative
cyclic cocycle for the pair ;
is a cyclic cochain on A defined through a regularization, \`a la Melrose, of
the usual Godbillon-Vey cyclic cocycle ; is a cyclic
cocycle on B, obtained through a suspension procedure involving and
a specific 1-cyclic cocycle (Roe's 1-cocycle). We call the eta
cocycle associated to . The Atiyah-Patodi-Singer formula is obtained
by defining a relative index class \Ind (D,D^\partial)\in K_* (A,B) and
establishing the equality =<\Ind (D,D^\partial),
[\tau^r_{GV}, \sigma_{GV}]>\eta_{GV}\sigma_{GV}$.Comment: 86 pages. This is the complete article corresponding to the
announcement "Eta cocycles" by the same authors (arXiv:0907.0173
A note on the higher Atiyah-Patodi-Singer index theorem on Galois coverings
Let be a finitely generated discrete group satisfying the rapid
decay condition. We give a new proof of the higher Atiyah-Patodi-Singer theorem
on a Galois -coverings, thus providing an explicit formula for the
higher index associated to a group cocycle which
is of polynomial growth with respect to a word-metric. Our new proof employs
relative K-theory and relative cyclic cohomology in an essential way
Synthesis, Crystal Structure, and Physical Properties of New Layered Oxychalcogenide La2O2Bi3AgS6
We have synthesized a new layered oxychalcogenide La2O2Bi3AgS6. From
synchrotron X-ray diffraction and Rietveld refinement, the crystal structure of
La2O2Bi3AgS6 was refined using a model of the P4/nmm space group with a =
4.0644(1) {\AA} and c = 19.412(1) {\AA}, which is similar to the related
compound LaOBiPbS3, while the interlayer bonds (M2-S1 bonds) are apparently
shorter in La2O2Bi3AgS6. The tunneling electron microscopy (TEM) image
confirmed the lattice constant derived from Rietveld refinement (c ~ 20 {\AA}).
The electrical resistivity and Seebeck coefficient suggested that the
electronic states of La2O2Bi3AgS6 are more metallic than those of LaOBiS2 and
LaOBiPbS3. The insertion of a rock-salt-type chalcogenide into the van der
Waals gap of BiS2-based layered compounds, such as LaOBiS2, will be a useful
strategy for designing new layered functional materials in the layered
chalcogenide family.Comment: 11 pages, 1 table, 5 figure
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