Universality at integer quantum Hall transitions

We report in this paper results of experimental and theoretical studies of transitions between different integer quantum Hall phases, as well as transition between the insulating phase and quantum Hall phases at high magnetic fields. We focus mainly on universal properties of the transitions. We demonstrate that properly defined conductivity tensor is universal at the transitions. We also present numerical results of a non-interacting electron model, which suggest that the Thouless conductance is universal at integer quantum Hall transitions, just like the conductivity tensor. Finite temperature and system size effects near the transition point are also studied.Comment: 20 pages, 15 figure

Hopping Conduction in Uniaxially Stressed Si:B near the Insulator-Metal Transition

Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of temperature and stress, the conductivity collapses onto a single universal scaling curve. For large values of the argument, the scaling function is well fit by the exponentially activated form associated with variable range hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. The temperature dependence of the prefactor, corresponding to the T-dependence of the critical curve, has been determined reliably for this system, and is proportional to the square-root of T. We show explicitly that nevlecting the prefactor leads to substantial errors in the determination of the scaling parameters and the critical exponents derived from them. The conductivity is not consistent with Mott variable-range hopping in the critical region nor does it obey this form for any range of the parameters. Instead, for smaller argument of the scaling function, the conductivity of Si:B is well fit by an exponential form with exponent 0.31 related to the critical exponents of the system at the metal- insulator transition.Comment: 13 pages, 6 figure

Aluminum Oxide Layers as Possible Components for Layered Tunnel Barriers

We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-grown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 deg C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theory of direct tunneling shows that the annealing of thermally-grown oxides at temperatures above 300 deg C results in a substantial increase of their average tunnel barriers height, from ~1.8 eV to ~2.45 eV, versus the practically unchanged height of ~2.0 eV for plasma-grown layers. This difference, together with high endurance of annealed barriers under electric stress (breakdown field above 10 MV/cm) may enable all-AlOx and SiO2/AlOx layered "crested" barriers for advanced floating-gate memory applications.Comment: 7 pages, 6 figure

Universal scaling, beta function, and metal-insulator transitions

We demonstrate a universal scaling form of longitudinal resistance in the quantum critical region of metal-insulator transitions, based on numerical results of three-dimensional Anderson transitions (with and without magnetic field), two-dimensional quantum Hall plateau to insulator transition, as well as experimental data of the recently discovered two-dimensional metal-insulator transition. The associated reflection symmetry and a peculiar logarithmic form of the beta function exist over a wide range in which the resistance can change by more than one order of magnitude. Interesting implications for the two-dimensional metal-insulator transition are discussed.Comment: 4 pages, REVTEX, 4 embedded figures; minor corrections to figures and tex

Scaling theory of two-dimensional metal-insulator transitions

We discuss the recently discovered two-dimensional metal-insulator transition in zero magnetic field in the light of the scaling theory of localization. We demonstrate that the observed symmetry relating conductivity and resistivity follows directly from the quantum critical behavior associated with such a transition. In addition, we show that very general scaling considerations imply that any disordered two dimensional metal is a perfect metal, but most likely not a Fermi liquid.Comment: 4 pages, no figures, REVTEX. Minor corrections adde

Metal-insulator transition at B=0 in a dilute two dimensional GaAs-AlGaAs hole gas

We report the observation of a metal insulator transition at B=0 in a high mobility two dimensional hole gas in a GaAs-AlGaAs heterostructure. A clear critical point separates the insulating phase from the metallic phase, demonstrating the existence of a well defined minimum metallic conductivity sigma(min)=2e/h. The sigma(T) data either side of the transition can be `scaled' on to one curve with a single parameter (To). The application of a parallel magnetic field increases sigma(min) and broadens the transition. We argue that strong electron-electron interactions (rs = 10) destroy phase coherence, removing quantum intereference corrections to the conductivity.Comment: 4 pages RevTex + 4 figures. Submitted to PRL. Originally posted 22 September 1997. Revised 12 October 1997 - minor changes to referencing, figure cations and figure

In-plane Magnetoconductivity of Si-MOSFET's: A Quantitative Comparison between Theory and Experiment

For densities above $n=1.6 \times 10^{11}$ cm$^{-2}$ in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experiment and the theory of Zala, Narozhny and Aleiner is obtained for the response of the conductivity to a magnetic field applied parallel to the plane of the electrons. However, the Fermi liquid parameter $F_0^\sigma(n)$ and the valley splitting $\Delta_V(n)$ obtained from fits to the magnetoconductivity, although providing qualitatively correct behavior (including sign), do not yield quantitative agreement with the temperature dependence of the conductivity in zero magnetic field. Our results suggest the existence of additional scattering processes not included in the theory in its present form

Conducting phase in the two-dimensional disordered Hubbard model

We study the temperature-dependent conductivity $\sigma(T)$ and spin susceptibility $\chi(T)$ of the two-dimensional disordered Hubbard model. Calculations of the current-current correlation function using the Determinant Quantum Monte Carlo method show that repulsion between electrons can significantly enhance the conductivity, and at low temperatures change the sign of $d\sigma/dT$ from positive (insulating behavior) to negative (conducting behavior). This result suggests the possibility of a metallic phase, and consequently a metal-insulator transition,in a two-dimensional microscopic model containing both interactions and disorder. The metallic phase is a non-Fermi liquid with local moments as deduced from a Curie-like temperature dependence of $\chi(T)$.Comment: 4 pages; 4 postscript figures; added (1) a new figure showing temperature dependence of spin susceptibility; (2) more references. accepted for publication in Phys. Rev. Let

The Young and Bright Type Ia Supernova ASASSN-14lp: Discovery, Early-Time Observations, First-Light Time, Distance to NGC 4666, and Progenitor Constraints

On 2014 Dec. 9.61, the All-Sky Automated Survey for SuperNovae (ASAS-SN or "Assassin") discovered ASASSN-14lp just $\sim2$ days after first light using a global array of 14-cm diameter telescopes. ASASSN-14lp went on to become a bright supernova ($V = 11.94$ mag), second only to SN 2014J for the year. We present prediscovery photometry (with a detection less than a day after first light) and ultraviolet through near-infrared photometric and spectroscopic data covering the rise and fall of ASASSN-14lp for more than 100 days. We find that ASASSN-14lp had a broad light curve ($\Delta m_{15}(B) = 0.80 \pm 0.05$), a $B$-band maximum at $2457015.82 \pm 0.03$, a rise time of $16.94^{+ 0.11 }_{- 0.10 }$ days, and moderate host--galaxy extinction ($E(B-V)_{\textrm{host}} = 0.33 \pm 0.06$). Using ASASSN-14lp we derive a distance modulus for NGC 4666 of $\mu = 30.8 \pm 0.2$ corresponding to a distance of $14.7 \pm 1.5$ Mpc. However, adding ASASSN-14lp to the calibrating sample of Type Ia supernovae still requires an independent distance to the host galaxy. Finally, using our early-time photometric and spectroscopic observations, we rule out red giant secondaries and, assuming a favorable viewing angle and explosion time, any non-degenerate companion larger than $0.34 R_{\textrm{sun}}$.Comment: 12 pages, 9 figures, 4 tables. Accepted to ApJ. Photometric data presented in this submission are included as an ancillary file. For a brief video explaining this paper, see https://www.youtube.com/watch?v=1bOV-Cqs-a

Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field

Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field. The characteristics of the system derived experimentally are in quantitative agreement with numerical self-consistent-field calculations of the electronic structure.Comment: 6 pages, 5 figure