Optoelectronic gain control of a microwave single stage GaAs MESFET amplifier

Gain control of a single stage GaAs MESFET amplifier is demonstrated by the use of optical illumination of photon energy greater than the GaAs bandgap. The optical illumination is supplied by a semiconductor laser diode and is coupled to the Schottky gate of the MESFET by an optical fiber. The increase in gain is observed to be as much as 5.15 dB when the MESFET is biased close to pinchoff, that is, V(sub gs) equals -1.5 V and with optical illumination of 1.5 mW. The computed maximum available gain (MAG) and current gain (bar h sub 21 bar) from the de-embedded s-parameters show that MAG is unaffected by optical illumination, however, bar h(sub 21)bar increases by more than 2 dB under optical illumination of 1.5 mW. The maximum frequency of oscillation (F sub max) and the unity current gain cut-off frequency (F sub t) obtained by extrapolating the MAG and bar h(sub 21)bar curves, respectively, show that the F(sub max) is insensitive to optical illumination but F(sub t) increases by 5 GHz

Fuel cell on-site integrated energy system parametric analysis of a residential complex

A parametric energy-use analysis was performed for a large apartment complex served by a fuel cell on-site integrated energy system (OS/IES). The variables parameterized include operating characteristics for four phosphoric acid fuel cells, eight OS/IES energy recovery systems, and four climatic locations. The annual fuel consumption for selected parametric combinations are presented and a breakeven economic analysis is presented for one parametric combination. The results show fuel cell electrical efficiency and system component choice have the greatest effect on annual fuel consumption; fuel cell thermal efficiency and geographic location have less of an effect

Propagation characteristics of some novel coplanar waveguide transmission lines on GaAs at MM-wave frequencies

Three new Coplanar Waveguide (CPW) transmission lines, namely, Suspended CPW (SCPW), Stripline-like Suspended CPW (SSCPW) and Inverted CPW (ICPW), are proposed and also analyzed for their propagation characteristics. The substrate thickness, permittivity and dimensions of housing are assumed to be arbitrary. These structures have the following advantages over conventional CPW. Firstly, the ratio of guide wavelength to free space wavelength is closer to unity which results in larger dimensions and hence lower tolerances. Secondly, the effective dielectric constant is lower and hence the electromagnetic field energies are concentrated more in the air regions which should reduce attenuation. Thirdly, for a prescribed impedance level, the above structures have a wider slot width for identical strip width. Thus, low impedance lines can be achieved with reasonable slot dimensions. Fourthly, in an inverted CPW shunt mounting of active devices, such as Gunn and IMPATT diodes, between the strip and the metal trough is possible. This feature further enhances the attractiveness of the above structures. Lastly, an E-plane probe type transition from a rectangular waveguide to suspended CPW can also be easily realized. The computed results for GaAs at Ka-band illustrate the variation of normalized guide wavelength, effective dielectric constant and the characteristic impedance as a function of the: (1) frequency; (2) distance of separation between the trough side walls; (3) normalized strip and slot widths; and (4) normalized air gap

Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET

Direct current and also the microwave characteristics of optically illuminated AlGaAs/GaAs HEMT are experimentally measured for the first time and compared with that of GaAs MESFET. The results showed that the average increase in the gain is 2.89 dB under 1.7 nW/sq cm optical intensity at 0.83 microns. Further, the effect of illumination on S-parameters is more pronounced when the devices are biased close to pinch off. Novel applications of optically illuminated HEMT as a variable gain amplifier, high speed high frequency photo detector, and mixer are demonstrated

Space Power Amplification with Active Linearly Tapered Slot Antenna Array

A space power amplifier composed of active linearly tapered slot antennas (LTSA's) has been demonstrated and shown to have a gain of 30 dB at 20 GHz. In each of the antenna elements, a GaAs monolithic microwave integrated circuit (MMIC) three-stage power amplifier is integrated with two LTSA's. The LTSA and the MMIC power amplifier has a gain of 11 dB and power added efficiency of 14 percent respectively. The design is suitable for constructing a large array using monolithic integration techniques

Optically controlled GaAs dual-gate MESFET and permeable base transistors

Optically induced voltage and dc characteristics of the GaAs Dual-gate MESFET and the Permeable Base Transistor (PBT) with optical illumination at wavelength below 0.87 microns were obtained and compared with GaAs MESFET. It was observed that PBT can handle higher current density when illuminated

Coplanar waveguide feeds for phased array antennas

The design and performance is presented of the following Coplanar Waveguides (CPW) microwave distribution networks for linear as well as circularly polarized microstrip patches and dipole arrays: (1) CPW/Microstrip Line feed; (2) CPW/Balanced Stripline feed; (3) CPW/Slotline feed; (4) Grounded CPW/Balanced coplanar stripline feed; and (5) CPW/Slot coupled feed. Typical measured radiation patterns are presented, and their relative advantages and disadvantages are compared

A 1-W, 30-ghz, CPW Amplifier for ACTS Small Terminal Uplink

The progress is described of the development of a 1 W, 30 GHz, coplanar waveguide (CPW) amplifier for the Advanced Communication Technology Satellite (ACTS)Small Terminal Uplink. The amplifier is based on Texas Instruments' monolithic microwave integrated circuit (MMIC) amplifiers; a three stage, low power amplifier, and a single stage, high power amplifier. The amplifiers have a power output of 190 mW and 0.710 W, gain of 23 and 4.2 dB, and efficiencies of 30.2 and 24 percent for the three stage and one stage amplifiers, respectively. The chips are to be combined via a CPW power divider/combiner circuit to yield the desired 1 W of output power

Microwave characterization and modeling of GaAs/AlGaAs heterojunction bipolar transistors

The characterization and modeling of a microwave GaAs/AlGaAs heterojunction Bipolar Transistor (HBT) are discussed. The de-embedded scattering parameters are used to derive a small signal lumped element equivalent circuit model using EEsof's Touchstone software package. Each element in the equivalent circuit model is shown to have its origin within the device. The model shows good agreement between the measured and modeled scattering parameters over a wide range of bias currents. Further, the MAG (maximum available power gain) and the h sub 21 (current gain) calculated from the measured data and those predicted by the model are also in good agreement. Consequently, the model should also be capable of predicting the f sub max and the f sub T of other HBTs

Planar dielectric resonator stabilized HEMT oscillator integrated with CPW/aperture coupled patch antenna

A new design of an active antenna with a dielectric resonator stabilized high electron mobility transistor (HEMT) oscillator (DRO) and an aperture-coupled patch antenna is reported. The circuit is fabricated using coplanar waveguide (CPW) with the oscillator and the antenna on opposite sides of the substrate. The active antenna was demonstrated at 7.6 GHz; however, the design can be scaled to higher frequencies. Excellent oscillator characteristics and radiation patterns were obtained