Theoretical Raman fingerprints of α\alpha-, β\beta-, and γ\gamma-graphyne

The novel graphene allotropes $\alpha$-, $\beta$-, and $\gamma$-graphyne derive from graphene by insertion of acetylenic groups. The three graphynes are the only members of the graphyne family with the same hexagonal symmetry as graphene itself, which has as a consequence similarity in their electronic and vibrational properties. Here, we study the electronic band structure, phonon dispersion, and Raman spectra of these graphynes within an \textit{ab-initio}-based non-orthogonal tight-binding model. In particular, the predicted Raman spectra exhibit a few intense resonant Raman lines, which can be used for identification of the three graphynes by their Raman spectra for future applications in nanoelectronics

Comparative study of the two-phonon Raman bands of silicene and graphene

We present a computational study of the two-phonon Raman spectra of silicene and graphene within a density-functional non-orthogonal tight-binding model. Due to the presence of linear bands close to the Fermi energy in the electronic structure of both structures, the Raman scattering by phonons is resonant. We find that the Raman spectra exhibit a crossover behavior for laser excitation close to the \pi-plasmon energy. This phenomenon is explained by the disappearance of certain paths for resonant Raman scattering and the appearance of other paths beyond this energy. Besides that, the electronic joint density of states is divergent at this energy, which is reflected on the behavior of the Raman bands of the two structures in a qualitatively different way. Additionally, a number of Raman bands, originating from divergent phonon density of states at the M point and at points, inside the Brillouin zone, is also predicted. The calculated spectra for graphene are in excellent agreement with available experimental data. The obtained Raman bands can be used for structural characterization of silicene and graphene samples by Raman spectroscopy

Analysis of the radio-frequency single-electron transistor with large quality factor

We have analyzed the response and noise-limited sensitivity of the radio-frequency single-electron transistor (RF-SET), extending the previously developed theory to the case of arbitrary large quality factor Q of the RF-SET tank circuit. It is shown that while the RF-SET response reaches the maximum at Q roughly corresponding to the impedance matching condition, the RF-SET sensitivity monotonically worsens with the increase of Q. Also, we propose a novel operation mode of the RF-SET, in which an overtone of the incident rf wave is in resonance with the tank circuit.Comment: 4 pages, submitted to Appl.Phys.Let

Exactness of the Bogoliubov approximation in random external potentials

We investigate the validity of the Bogoliubov c-number approximation in the case of interacting Bose-gas in a \textit{homogeneous random} media. To take into account the possible occurence of type III generalized Bose-Einstein condensation (i.e. the occurrence of condensation in an infinitesimal band of low kinetic energy modes without macroscopic occupation of any of them) we generalize the c-number substitution procedure to this band of modes with low momentum. We show that, as in the case of the one-mode condensation for translation-invariant interacting systems, this procedure has no effect on the exact value of the pressure in the thermodynamic limit, assuming that the c-numbers are chosen according to a suitable variational principle. We then discuss the relation between these c-numbers and the (total) density of the condensate

Partitioning a graph into highly connected subgraphs

Given $k\ge 1$, a $k$-proper partition of a graph $G$ is a partition ${\mathcal P}$ of $V(G)$ such that each part $P$ of ${\mathcal P}$ induces a $k$-connected subgraph of $G$. We prove that if $G$ is a graph of order $n$ such that $\delta(G)\ge \sqrt{n}$, then $G$ has a $2$-proper partition with at most $n/\delta(G)$ parts. The bounds on the number of parts and the minimum degree are both best possible. We then prove that If $G$ is a graph of order $n$ with minimum degree $\delta(G)\ge\sqrt{c(k-1)n}$, where $c=\frac{2123}{180}$, then $G$ has a $k$-proper partition into at most $\frac{cn}{\delta(G)}$ parts. This improves a result of Ferrara, Magnant and Wenger [Conditions for Families of Disjoint $k$-connected Subgraphs in a Graph, Discrete Math. 313 (2013), 760--764] and both the degree condition and the number of parts are best possible up to the constant $c$

On Classification of QCD defects via holography

We discuss classification of defects of various codimensions within a holographic model of pure Yang-Mills theories or gauge theories with fundamental matter. We focus on their role below and above the phase transition point as well as their weights in the partition function. The general result is that objects which are stable and heavy in one phase are becoming very light (tensionless) in the other phase. We argue that the $\theta$ dependence of the partition function drastically changes at the phase transition point, and therefore it correlates with stability properties of configurations. Some possible applications for study the QCD vacuum properties above and below phase transition are also discussed.Comment: 21 pages, 2 figure