The dependence of cylindrical resonator natural frequencies on the fluid density

The article examines the dependence of cylindrical resonator natural frequencies (sensitive element) on the density (mass) of different fluids flowing through it. The cylindrical resonators are being widely applied in automatic control systems of technological processes as oscillating transducer density meter. The article presents the experimental results that prove the dependence of natural frequencies and vibration amplitude on the fluid density

The high-mobility bended n-channel silicon nanowire transistor

This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measured during processing is discussed. The strain profile in silicon nanowires is evaluated by Raman spectroscopy both before device gate stack fabrication (tensile strains of up to 2.5% are measured) and by measurement through the polysilicon gate on completed electrically characterized devices. Drain current boosting in bended n-channels is investigated as a function of the transistor operation regime, and it is shown that the enhancement depends on the effective electrical field. The maximum observed electron mobility enhancement is on the order of 100% for a gate bias near the threshold voltage. Measurements of stress through the full gate stack and experimental device characteristics of the same transistor reveal a stress of 600 MPa and corresponding improvements of the normalized drain current, normalized transconductance, and low-field mobility by 34% (at maximum gate overdrive), 50% (at g max), and 53%, respectively, compared with a reference nonstrained device at room temperature. Finally, it is found that, at low temperatures, the low-field mobility is much higher in bended devices, compared with nonbended devices

Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

In this paper, we report formation of GAA buckled dual Si nanowire MOSFETs including two sub-80 nm Si cores on bulk Si using 0.8 mu m optical lithography and local oxidation for the first time. 0.833 GPa uniaxial tensile stress is measured in the buckled suspended dual Si nanowires using micro-Raman spectroscopy. The array of GAA buckled dual Si nanowire MOSFETs at V-DS = 50 mV shows 64 mV/dec. subthreshold slope and 61% stress-based low-field electron mobility enhancement in comparison to the omega-gate relaxed reference device. Finally, digital logic implementation is demonstrated using multi-gate nanowires on bulk Si. (C) 2013 Elsevier B.V. All rights reserved