Approximation bounds on maximum edge 2-coloring of dense graphs

For a graph $G$ and integer $q\geq 2$, an edge $q$-coloring of $G$ is an assignment of colors to edges of $G$, such that edges incident on a vertex span at most $q$ distinct colors. The maximum edge $q$-coloring problem seeks to maximize the number of colors in an edge $q$-coloring of a graph $G$. The problem has been studied in combinatorics in the context of {\em anti-Ramsey} numbers. Algorithmically, the problem is NP-Hard for $q\geq 2$ and assuming the unique games conjecture, it cannot be approximated in polynomial time to a factor less than $1+1/q$. The case $q=2$, is particularly relevant in practice, and has been well studied from the view point of approximation algorithms. A $2$-factor algorithm is known for general graphs, and recently a $5/3$-factor approximation bound was shown for graphs with perfect matching. The algorithm (which we refer to as the matching based algorithm) is as follows: "Find a maximum matching $M$ of $G$. Give distinct colors to the edges of $M$. Let $C_1,C_2,\ldots, C_t$ be the connected components that results when M is removed from G. To all edges of $C_i$ give the $(|M|+i)$th color." In this paper, we first show that the approximation guarantee of the matching based algorithm is $(1 + \frac {2} {\delta})$ for graphs with perfect matching and minimum degree $\delta$. For $\delta \ge 4$, this is better than the $\frac {5} {3}$ approximation guarantee proved in {AAAP}. For triangle free graphs with perfect matching, we prove that the approximation factor is $(1 + \frac {1}{\delta - 1})$, which is better than $5/3$ for $\delta \ge 3$.Comment: 11pages, 3 figure

Surface roughness assisted growth of vertically oriented ferroelectric SbSI nanorods

We report the catalyst-free synthesis of arrays of c-axis oriented antimony sulfoiodide nanorods on anodic aluminum oxide (AAO) substrates by vapor phase deposition. The surface roughness of the AAO substrates played a decisive role in the orientation control of the SbSI nanorods produced. The as-grown SbSI nanorods were single-crystalline and ⟨001⟩ oriented, as revealed from the X-ray diffraction and transmission electron microscopy analysis. Switching spectroscopy-piezoresponse force microscopy experiments demonstrated, for the first time, the presence of switchable ferroelectricity and piezoelectricity in individual SbSI nanorods. Ferroelectric switching in the SbSI nanorods was found to occur via a 180° domain reversal, because of the preferred orientation of the nanorods along their polar c-axis

Atomic vapor deposition of bismuth titanate thin films

c-axis oriented ferroelectric bismuth titanate (Bi4Ti 3O12) thin films were grown on (001) strontium titanate (SrTiO3) substrates by an atomic vapor deposition technique. The ferroelectric properties of the thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data and transmission electron microscopy analysis demonstrated the presence of out-of-phase boundaries (OPBs). It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films. Piezo-responses of the thin films were measured by piezo-force microscopy. It is found that the in-plane piezoresponse is stronger than the out-of-plane response, due to the strong c-axis orientation of the films

The structural and piezoresponse properties of c-axis-oriented Aurivillius phase Bi5Ti3FeO15 thin films deposited by atomic vapor deposition

The deposition by atomic vapor deposition of highly c-axis-oriented Aurivillius phase Bi 5Ti 3FeO 15 (BTFO) thin films on (100) Si substrates is reported. Partially crystallized BTFO films with c-axis perpendicular to the substrate surface were first deposited at 610°C (8 excess Bi), and subsequently annealed at 820°C to get stoichiometric composition. After annealing, the films were highly c-axis-oriented, showing only (00l) peaks in x-ray diffraction (XRD), up to (0024). Transmission electron microscopy (TEM) confirms the BTFO film has a clear layered structure, and the bismuth oxide layer interleaves the four-block pseudoperovskite layer, indicating the n 4 Aurivillius phase structure. Piezoresponse force microscopy measurements indicate strong in-plane piezoelectric response, consistent with the c-axis layered structure, shown by XRD and TEM

Magnetic field-induced ferroelectric switching in multiferroic aurivillius phase thin films at room temperature

Single-phase multiferroic materials are of considerable interest for future memory and sensing applications. Thin films of Aurivillius phase Bi 7Ti3Fe3O21 and Bi6Ti 2.8Fe1.52Mn0.68O18 (possessing six and five perovskite units per half-cell, respectively) have been prepared by chemical solution deposition on c-plane sapphire. Superconducting quantum interference device magnetometry reveal Bi7Ti3Fe 3O21 to be antiferromagnetic (TN = 190 K) and weakly ferromagnetic below 35 K, however, Bi6Ti2.8Fe 1.52Mn0.68O18 gives a distinct room-temperature in-plane ferromagnetic signature (Ms = 0.74 emu/g, μ0Hc =7 mT). Microstructural analysis, coupled with the use of a statistical analysis of the data, allows us to conclude that ferromagnetism does not originate from second phase inclusions, with a confidence level of 99.5%. Piezoresponse force microscopy (PFM) demonstrates room-temperature ferroelectricity in both films, whereas PFM observations on Bi6Ti2.8Fe1.52Mn0.68O18 show Aurivillius grains undergo ferroelectric domain polarization switching induced by an applied magnetic field. Here, we show for the first time that Bi6Ti2.8Fe1.52Mn0.68O18 thin films are both ferroelectric and ferromagnetic and, demonstrate magnetic field-induced switching of ferroelectric polarization in individual Aurivillius phase grains at room temperature

Room temperature ferroelectric and magnetic investigations and detailed phase analysis of Aurivillius phase Bi 5Ti 3Fe 0.7Co 0.3O 15 thin films

Aurivillius phase Bi 5Ti 3Fe 0.7Co 0.3O 15 (BTF7C3O) thin films on α-quartz substrates were fabricated by a chemical solution deposition method and the room temperature ferroelectric and magnetic properties of this candidate multiferroic were compared with those of thin films of Mn 3 substituted, Bi 5Ti 3Fe 0.7Mn 0.3O 15 (BTF7M3O). Vertical and lateral piezoresponse force microscopy (PFM) measurements of the films conclusively demonstrate that BTF7C3O and BTF7M3O thin films are piezoelectric and ferroelectric at room temperature, with the major polarization vector in the lateral plane of the films. No net magnetization was observed for the in-plane superconducting quantum interference device (SQUID) magnetometry measurements of BTF7M3O thin films. In contrast, SQUID measurements of the BTF7C3O films clearly demonstrated ferromagnetic behavior, with a remanent magnetization, B r, of 6.37 emu/cm 3 (or 804 memu/g), remanent moment 4.99 × 10 -5 emu. The BTF7C3O films were scrutinized by x-ray diffraction, high resolution transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis mapping to assess the prospect of the observed multiferroic properties being intrinsic to the main phase. The results of extensive micro-structural phase analysis demonstrated that the BTF7C3O films comprised of a 3.95 Fe/Co-rich spinel phase, likely CoFe 2 - xTi xO 4, which would account for the observed magnetic moment in the films. Additionally, x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM) imaging confirmed that the majority of magnetic response arises from the Fe sites of Fe/Co-rich spinel phase inclusions. While the magnetic contribution from the main phase could not be determined by the XMCD-PEEM images, these data however imply that the Bi 5Ti 3Fe 0.7Co 0.3O 15 thin films are likely not single phase multiferroics at room temperature. The PFM results presented demonstrate that the naturally 2D nanostructured Bi 5Ti 3Fe 0.7Co 0.3O 15 phase is a novel ferroelectric and has potential commercial applications in high temperature piezoelectric and ferroelectric memory technologies. The implications for the conclusive demonstration of ferroelectric and ferromagnetic properties in single-phase materials of this type are discussed