The meteorology of Mars and Venus Final report

Meteorology of Mars and Venu

Stationary Regime of Random Resistor Networks Under Biased Percolation

The state of a 2-D random resistor network, resulting from the simultaneous evolutions of two competing biased percolations, is studied in a wide range of bias values. Monte Carlo simulations show that when the external current $I$ is below the threshold value for electrical breakdown, the network reaches a steady state with a nonlinear current-voltage characteristic. The properties of this nonlinear regime are investigated as a function of different model parameters. A scaling relation is found between $/_0$ and $I/I_0$, where $$ is the average resistance, $_0$ the linear regime resistance and $I_0$ the threshold value for the onset of nonlinearity. The scaling exponent is found to be independent of the model parameters. A similar scaling behavior is also found for the relative variance of resistance fluctuations. These results compare well with resistance measurements in composite materials performed in the Joule regime up to breakdown.Comment: 9 pages, revtex, proceedings of the Merida Satellite Conference STATPHYS2

Fretting wear of Ti(CxNy) PVD coatings under variable environmental conditions

Fretting wear as a specific type of degradation is defined as an oscillatory motion at small amplitude between two nominally stationary solid bodies in mutual contact. Under external stresses the interface is being damaged by debris generation and its successive ejections outside the contact area. A potential protection against fretting damage by means of hard coatings is being offered by different surface engineering techniques. For this study TiC, TiN and TiCN hard coatings manufactured by a PVD method have been selected and tested against smooth polycrystalline alumina ball. A fretting test programme has been carried out at the frequency of 5Hz, 100N normal load, 100µm displacement amplitude and at three values of a relative humidity: 10, 50 and 90% at 295-298K temperature. It turned out that the intensity of wear process was depending not only on loading conditions but on environmental ones as well. A significant impact of RH on wear rate and friction behaviour of the coatings under investigation has been observed. Two different damage mechanisms have been identified and related to the phenomena of debris oxidation and debris adhesion to the counterbody surface. In the latter case the debris deposited onto the surface of the alumina ball lead to a change of stress distribution at the interface and as a result to accelerated wear. In this work experiments with variable relative humidity increasing from 10% to 90% within 1 a single fretting test have been completed. It follows from these experiments that there exists an intermediate value of the RH at which the friction coefficient changes rapidly. Finally a dissipated energy approach has been applied in the work in order to quantify and compare fretting wear rates of different hard coatings

Gate Coupling to Nanoscale Electronics

The realization of single-molecule electronic devices, in which a nanometer-scale molecule is connected to macroscopic leads, requires the reproducible production of highly ordered nanoscale gaps in which a molecule of interest is electrostatically coupled to nearby gate electrodes. Understanding how the molecule-gate coupling depends on key parameters is crucial for the development of high-performance devices. Here we directly address this, presenting two- and three-dimensional finite-element electrostatic simulations of the electrode geometries formed using emerging fabrication techniques. We quantify the gate coupling intrinsic to these devices, exploring the roles of parameters believed to be relevant to such devices. These include the thickness and nature of the dielectric used, and the gate screening due to different device geometries. On the single-molecule (~1nm) scale, we find that device geometry plays a greater role in the gate coupling than the dielectric constant or the thickness of the insulator. Compared to the typical uniform nanogap electrode geometry envisioned, we find that non-uniform tapered electrodes yield a significant three orders of magnitude improvement in gate coupling. We also find that in the tapered geometry the polarizability of a molecular channel works to enhance the gate coupling

Superconducting properties of ultrathin Bi2Sr2CaCu2O8+x single crystals

We use Ar-ion milling to thin Bi2212 single crystals down to a few nanometers or one-to-two (CuO2)2 layers. With decreasing the thickness, superconducting transition temperature gradually decreases to zero and the in-plane resistivity increases to large values indicating the existence of a superconductor-insulator transition in ultrathin Bi2212 single crystals.Comment: 17 pages, 6 figures, to appear in J. Appl. Phys. 98(3) 200

Controlling surface statistical properties using bias voltage: Atomic force microscopy and stochastic analysis

The effect of bias voltages on the statistical properties of rough surfaces has been studied using atomic force microscopy technique and its stochastic analysis. We have characterized the complexity of the height fluctuation of a rough surface by the stochastic parameters such as roughness exponent, level crossing, and drift and diffusion coefficients as a function of the applied bias voltage. It is shown that these statistical as well as microstructural parameters can also explain the macroscopic property of a surface. Furthermore, the tip convolution effect on the stochastic parameters has been examined.Comment: 8 pages, 11 figures

Numerical Simulation of Grain Boundary Grooving By Level Set Method

A numerical investigation of grain-boundary grooving by means of a Level Set method is carried out. An idealized polygranular interconnect which consists of grains separated by parallel grain boundaries aligned normal to the average orientation of the surface is considered. The surface diffusion is the only physical mechanism assumed. The surface diffusion is driven by surface curvature gradients, and a fixed surface slope and zero atomic flux are assumed at the groove root. The corresponding mathematical system is an initial boundary value problem for a two-dimensional Hamilton-Jacobi type equation. The results obtained are in good agreement with both Mullins' analytical "small slope" solution of the linearized problem (W.W. Mullins, 1957) (for the case of an isolated grain boundary) and with solution for the periodic array of grain boundaries (S.A. Hackney, 1988).Comment: Submitted to the Journal of Computational Physics (19 pages, 8 Postscript figures, 3 tables, 29 references

An epitaxial model for heterogeneous nucleation on potent substrates

© The Minerals, Metals & Materials Society and ASM International 2012In this article, we present an epitaxial model for heterogeneous nucleation on potent substrates. It is proposed that heterogeneous nucleation of the solid phase (S) on a potent substrate (N) occurs by epitaxial growth of a pseudomorphic solid (PS) layer on the substrate surface under a critical undercooling (ΔT ). The PS layer with a coherent PS/N interface mimics the atomic arrangement of the substrate, giving rise to a linear increase of misfit strain energy with layer thickness. At a critical thickness (h ), elastic strain energy reaches a critical level, at which point, misfit dislocations are created to release the elastic strain energy in the PS layer. This converts the strained PS layer to a strainless solid (S), and changes the initial coherent PS/N interface into a semicoherent S/N interface. Beyond this critical thickness, further growth will be strainless, and solidification enters the growth stage. It is shown analytically that the lattice misfit (f) between the solid and the substrate has a strong influence on both h and ΔT ; h decreases; and ΔT increases with increasing lattice misfit. This epitaxial nucleation model will be used to explain qualitatively the generally accepted experimental findings on grain refinement in the literature and to analyze the general approaches to effective grain refinement.EPSRC Centre for Innovative Manufacturing in Liquid Metal Engineerin

How metal films de-wet substrates - identifying the kinetic pathways and energetic driving forces

We study how single-crystal chromium films of uniform thickness on W(110) substrates are converted to arrays of three-dimensional (3D) Cr islands during annealing. We use low-energy electron microscopy (LEEM) to directly observe a kinetic pathway that produces trenches that expose the wetting layer. Adjacent film steps move simultaneously uphill and downhill relative to the staircase of atomic steps on the substrate. This step motion thickens the film regions where steps advance. Where film steps retract, the film thins, eventually exposing the stable wetting layer. Since our analysis shows that thick Cr films have a lattice constant close to bulk Cr, we propose that surface and interface stress provide a possible driving force for the observed morphological instability. Atomistic simulations and analytic elastic models show that surface and interface stress can cause a dependence of film energy on thickness that leads to an instability to simultaneous thinning and thickening. We observe that de-wetting is also initiated at bunches of substrate steps in two other systems, Ag/W(110) and Ag/Ru(0001). We additionally describe how Cr films are converted into patterns of unidirectional stripes as the trenches that expose the wetting layer lengthen along the W[001] direction. Finally, we observe how 3D Cr islands form directly during film growth at elevated temperature. The Cr mesas (wedges) form as Cr film steps advance down the staircase of substrate steps, another example of the critical role that substrate steps play in 3D island formation