Superconductivity in higher titanium oxides

Recent renewal of the highest transition temperature in a conventional superconductor of the sulfer hydride attracts much attention to exploring simple compounds with the lighter elements, situated in unconventional conditions. We report the discovery of superconductivity in simple oxides of Ti4O7 and g-Ti3O5 in a thin-film form having deliberately tuned epitaxial structures and off-stoichiometry. These higher titanium oxides join in a class of simple-oxide superconductors, and g-Ti3O5 now holds the highest superconducting transition temperature of 7.1 kelvin among them. The mechanism behind the superconductivity is discussed on the basis of electrical measurements and theoretical predictions. We conclude that superconductivity arises from unstabilized bipolaronic insulating states.Comment: 25 pages, 4 figures in main text, 14 pages, 11 figures in supplemental informatio

<Article> Understanding U.S. Overseas Military Presence after World War II

In this article I systematically examine how overseas military bases begin end or endure by focusing on the United States after World War II. I look at both international and domestic factors and argue that variables such as strategic interests power of the sending nation (i.e. a superpower stationing its troops overseas) regime shift and technology tend to show links between presence and withdrawal. In addition to the issues regarding the opening and closing of bases I discuss several factors that prolong U.S. military presence despite changes in the international strategic environment. Even though the initial rationale for establishing bases has disappeared the uncertain security environment renders sustained presence. Continued presence is closely related to the reasons alliances endure after the Cold War. Like alliances U.S. presence acts as a hedge against uncertainties and hence immediate withdrawals do not occur. America’s sphere of influence and the low costs of presence also contribute to continued presence.departmental bulletin pape

Hole Transport in p-Type ZnO

A two-band model involving the A- and B-valence bands was adopted to analyze the temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO. The hole transport characteristics (mobilities, and effective Hall factor) are calculated using the ``relaxation time approximation'' as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is dominant. In the calculation of the scattering rate for ionized impurity mechanism, the activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at acceptor concentration of $7 \times 10^{18}$ cm$^3$ is about 70 cm$^2$V$^{-1}$s$^{-1}$ with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.Comment: 5page, 5 figures, accepted for publication in Jpn. J. Appl. Phy

Majority-Carrier Mobilities in Undoped and \textit{n}-type Doped ZnO Epitaxial Layers

Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. In the experimental `mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at $n_s \sim 5\times$ 10$^{18}$ cm$^{-3}$ are significantly smaller than those at higher densities above $\sim 10^{20}$ cm$^{-3}$. Several types of scattering centers including ionized donors and oxygen traps are considered to account for the observed dependence of the Hall mobility on carrier concentration. The scattering mechanism is explained in terms of inter-grain potential barriers and charged impurities. A comparison between theoretical results and experimental data is made.Comment: 5 pages, 1 figure, conference on II-VI compounds, RevTe

Electronic properties across metal-insulator transition in \beta-pyrochlore-type CsW2O6 epitaxial films

In CsW2O6, which undergoes a metal-insulator transition (MIT) at 213 K, the emergence of exotic properties associated with rattling motion of Cs is expected owing to its characteristic \beta-pyrochlore-type structure. However, a hurdle for crystal growth hampers elucidation of detailed properties and mechanisms of the MIT. Here we report on the epitaxial growth of \beta-pyrochlore-type CsW2O6 films and their electronic properties across the MIT. Using pulsed-laser deposi-tion technique, we grew single-crystalline CsW2O6 films exhibiting remarkably lower resistivity compared with a poly-crystalline bulk and sharp MIT around 200 K. Negative magnetoresistance and positive Hall coefficient were found, which became pronounced below 200 K. The valence-band and core-levels photoemission spectra indicated the drastic changes across the MIT. In the valence band photoemission spectrum, the finite density of states was observed at the Fermi level in the metallic phase. In contrast, an energy gap appeared in the insulating phase. The split of W 4f core-level spectrum suggested the charge disproportionation of W5+ and W6+ in the insulating phase. The change of spectral shape in the Cs 4d core levels reflected the rattling motion of Cs+ cations. These results strongly suggest that CsW2O6 is a novel material, in which MIT is driven by the charge disproportionation associated with the rattling motion.Comment: 8 pages, 6 figure

Spectral shape analysis of ultraviolet luminescence in \textit{n}-type ZnO:Ga

Thin films of laser molecular-beam epitaxy grown \textit{n}-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the lineshape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.Comment: 5 pages, 3 figures, 1 table, to appear in the Nov. 1st issue of J. Appl. Phys. (Scheduled Issue

Blue light-emitting diode based on ZnO

A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p-i-n homojunction diodes through a semi-transparent electrode deposited on the p-type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p-type ZnO layer, indicating that the electron injection from the n-type layer to the p-type layer dominates the current, giving rise to the radiative recombination in the p-type layer. The imbalance in charge injection is considered to originate from the lower majority carrier concentration in the p-type layer, which is one or two orders of magnitude lower than that in the n-type one. The current-voltage characteristics showed the presence of series resistance of several hundreds ohms, corresponding to the current spread resistance within the bottom n-type ZnO. The employment of conducting ZnO substrates may solve the latter problem.Comment: 13 pages, 4 figures. Jpn. J. Appl. Phys. in pres