881 research outputs found

    The role of inhibitory G proteins and regulators of G protein signaling in the in vivo control of heart rate and predisposition to cardiac arrhythmias

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    Inhibitory heterotrimeric G proteins and the control of heart rate. The activation of cell signaling pathways involving inhibitory heterotrimeric G proteins acts to slow the heart rate via modulation of ion channels. A large number of Regulators of G protein signalings (RGSs) can act as GTPase accelerating proteins to inhibitory G proteins and thus it is important to understand the network of RGS\G-protein interaction. We will review our recent findings on in vivo heart rate control in mice with global genetic deletion of various inhibitory G protein alpha subunits. We will discuss potential central and peripheral contributions to the phenotype and the controversies in the literature

    Epitaxial growth and transport properties of Sr2_2CrWO6_6 thin films

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    We report on the preparation and characterization of epitaxial thin films of the double-perovskite Sr2_2CrWO6_6 by Pulsed Laser Deposition (PLD). On substrates with low lattice mismatch like SrTiO3_3, epitaxial Sr2_2CrWO6_6 films with high crystalline quality can be grown in a molecular layer-by-layer growth mode. Due to the similar ionic radii of Cr and W, these elements show no sublattice order. Nevertheless, the measured Curie temperature is well above 400 K. Due to the reducing growth atmosphere required for double perovskites, the SrTiO3_3 substrate surface undergoes an insulator-metal transition impeding the separation of thin film and substrate electric transport properties.Comment: 3 pages, 5 figure

    Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer

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    Epitaxy of oxide materials on silicon (Si) substrates is of great interest for future functional devices using the large variety of physical properties of the oxides as ferroelectricity, ferromagnetism, or superconductivity. Recently, materials with high spin polarization of the charge carriers have become interesting for semiconductor-oxide hybrid devices in spin electronics. Here, we report on pulsed laser deposition of magnetite (Fe3O4) on Si(001) substrates cleaned by an in situ laser beam high temperature treatment. After depositing a double buffer layer of titanium nitride (TiN) and magnesium oxide (MgO), a high quality epitaxial magnetite layer can be grown as verified by RHEED intensity oscillations and high resolution x-ray diffraction.Comment: submitte

    X-ray magnetic circular dichroism study of Re 5d magnetism in Sr2CrReO6

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    We have measured Re 5d spin and orbital magnetic moments in the ferrimagnetic double perovskite Sr2CrReO6 by X-ray magnetic circular dichroism at the L_{2,3} edges. In fair agreement with recent band-structure calculations [Vaitheeswaran et. al., Ref 1], at the Re site a large 5d spin magnetic moment of -0.68 mu_B and a considerable orbital moment of +0.25 mu_B have been detected. We found that the Curie temperature of the double perovskites A2BB'O6 scales with the spin magnetic moment of the 'non-magnetic' B' ion.Comment: 3 pages, 3 figure

    Magnetic interference patterns in 0-Pi SIFS Josephson junctions: effects of asymmetry between 0 and Pi regions

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    We present a detailed analysis of the dependence of the critical current I_c on the magnetic field B of 0, Pi, and 0-Pi superconductor-insulator-ferromagnet-superconductor Josephson junctions. I_c(B) of the 0 and Pi junction closely follows a Fraunhofer pattern, indicating a homogeneous critical current density j_c(x). The maximum of I_c(B) is slightly shifted along the field axis, pointing to a small remanent in-plane magnetization of the F-layer along the field axis. I_c(B) of the 0-Pi junction exhibits the characteristic central minimum. I_c however has a finite value here, due to an asymmetry of j_c in the 0 and Pi part. In addition, this I_c(B) exhibits asymmetric maxima and bumped minima. To explain these features in detail, flux penetration being different in the 0 part and the Pi part needs to be taken into account. We discuss this asymmetry in relation to the magnetic properties of the F-layer and the fabrication technique used to produce the 0-Pi junctions

    Unambiguous determination of spin dephasing times in ZnO

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    Time-resolved magneto-optics is a well-established optical pump probe technique to generate and to probe spin coherence in semiconductors. By this method, spin dephasing times T_2^* can easily be determined if their values are comparable to the available pump-probe-delays. If T_2^* exceeds the laser repetition time, however, resonant spin amplification (RSA) can equally be used to extract T_2^*. We demonstrate that in ZnO these techniques have several tripping hazards resulting in deceptive values for T_2^* and show how to avoid them. We show that the temperature dependence of the amplitude ratio of two separate spin species can easily be misinterpreted as a strongly temperature dependent T_2^* of a single spin ensemble, while the two spin species have T_2^* values which are nearly independent of temperature. Additionally, consecutive pump pulses can significantly diminish the spin polarization, which remains from previous pump pulses. While this barely affects T_2^* values extracted from delay line scans, it results in seemingly shorter T_2^* values in RSA.Comment: 11 pages, 10 figure

    Magnetic moments of W 5d in Ca2CrWO6 and Sr2CrWO6 double perovskites

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    We have investigated the magnetic moment of the W ion in the ferrimagnetic double perovskites Sr2CrWO6 and Ca2CrWO6 by X-ray magnetic circular dichroism (XMCD) at the W L(2,3) edges. In both compounds a finite negative spin and positive orbital magnetic moment was detected. The experimental results are in good agreement with band-structure calculations for (Sr/Ca)2CrWO6 using the full-potential linear muffin-tin orbital method. It is remarkable, that the magnetic ordering temperature, TC, is correlated with the magnetic moment at the 'non-magnetic' W atom.Comment: accepted for publicatio

    Magnetic and structural properties of GeMn films: precipitation of intermetallic nanomagnets

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    We present a comprehensive study relating the nanostructure of Ge_0.95Mn_0.05 films to their magnetic properties. The formation of ferromagnetic nanometer sized inclusions in a defect free Ge matrix fabricated by low temperature molecular beam epitaxy is observed down to substrate temperatures T_S as low as 70 deg. Celsius. A combined transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS) analysis of the films identifies the inclusions as precipitates of the ferromagnetic compound Mn_5Ge_3. The volume and amount of these precipitates decreases with decreasing T_S. Magnetometry of the films containing precipitates reveals distinct temperature ranges: Between the characteristic ferromagnetic transition temperature of Mn_5Ge_3 at approximately room temperature and a lower, T_S dependent blocking temperature T_B the magnetic properties are dominated by superparamagnetism of the Mn_5Ge_3 precipitates. Below T_B, the magnetic signature of ferromagnetic precipitates with blocked magnetic moments is observed. At the lowest temperatures, the films show features characteristic for a metastable state.Comment: accepted for publication in Phys. Rev. B 74 (01.12.2006). High resolution images ibide

    Spin-glass-like behavior of Ge:Mn

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    We present a detailed study of the magnetic properties of low-temperature-molecular-beam-epitaxy grown Ge:Mn dilute magnetic semiconductor films. We find strong indications for a frozen state of Ge_{1-x}Mn_{x}, with freezing temperatures of T_f=12K and T_f=15K for samples with x=0.04 and x=0.2, respectively, determined from the difference between field-cooled and zero-field-cooled magnetization. For Ge_{0.96}Mn_{0.04}, ac susceptibility measurements show a peak around T_f, with the peak position T'_f shifting as a function of the driving frequency f by Delta T_f' / [T_f' Delta log f] ~ 0.06, whereas for sample Ge_{0.8}Mn_{0.2} a more complicated behavior is observed. Furthermore, both samples exhibit relaxation effects of the magnetization after switching the magnitude of the external magnetic field below T_f which are in qualitative agreement with the field- and zero-field-cooled magnetization measurements. These findings consistently show that Ge:Mn exhibits a frozen magnetic state at low temperatures and that it is not a conventional ferromagnet.Comment: Revised version contains extended interpretation of experimental dat
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