Tunable control of the bandwidth and frequency correlations of entangled photons

We demonstrate experimentally a new technique to control the bandwidth and the type of frequency correlations (correlation, anticorrelation, and even uncorrelation) of entangled photons generated by spontaneous parametric downconversion. The method is based on the control of the group velocities of the interacting waves. This technique can be applied in any nonlinear medium and frequency band of interest. It is also demonstrated that this technique helps enhance the quality of polarization entanglement even when femtosecond pulses are used as a pump.Comment: 4 pages, 4 figures, submitted to Phys. Rev. Let

Shaping the waveform of entangled photons

We demonstrate experimentally the tunable control of the joint spectrum, i.e. waveform and degree of frequency correlations, of paired photons generated in spontaneous parametric downconversion. This control is mediated by the spatial shape of the pump beam in a type-I noncollinear configuration. We discuss the applicability of this technique to other sources of frequency entangled photons, such as electromagnetically induced Raman transitions.Comment: 5 Pages, 4 Figure

Subnanosecond spectral diffusion measurement using photon correlation

Spectral diffusion is a result of random spectral jumps of a narrow line as a result of a fluctuating environment. It is an important issue in spectroscopy, because the observed spectral broadening prevents access to the intrinsic line properties. However, its characteristic parameters provide local information on the environment of a light emitter embedded in a solid matrix, or moving within a fluid, leading to numerous applications in physics and biology. We present a new experimental technique for measuring spectral diffusion based on photon correlations within a spectral line. Autocorrelation on half of the line and cross-correlation between the two halves give a quantitative value of the spectral diffusion time, with a resolution only limited by the correlation set-up. We have measured spectral diffusion of the photoluminescence of a single light emitter with a time resolution of 90 ps, exceeding by four orders of magnitude the best resolution reported to date

Single-qubit optical quantum fingerprinting

We analyze and demonstrate the feasibility and superiority of linear optical single-qubit fingerprinting over its classical counterpart. For one-qubit fingerprinting of two-bit messages, we prepare `tetrahedral' qubit states experimentally and show that they meet the requirements for quantum fingerprinting to exceed the classical capability. We prove that shared entanglement permits 100% reliable quantum fingerprinting, which will outperform classical fingerprinting even with arbitrary amounts of shared randomness.Comment: 4 pages, one figur

An ultra-sensitive pulsed balanced homodyne detector: Application to time-domain quantum measurements

A pulsed balanced homodyne detector has been developed for precise measurements of electric field quadratures of pulsed optical quantum states. A high level of common mode suppression (> 85 dB) and low electronic noise (730 electrons per pulse) provide a signal to noise ratio of 14 dB for the measurement of the quantum noise of individual pulses. Measurements at repetition rates up to 1 MHz are possible. As a test, quantum tomography of the coherent state is performed and the Wigner function and the density matrix are reconstructed with a 99.5% fidelity. The detection system can also be used for ultrasensitive balanced detection in cw mode, e.g. for weak absorption measurements.Comment: 3 pages, submitted to Optics Letter

Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time challenge, since different material properties lead to high defect densities in the epitaxial layers. In recent years, nanostructures however have shown to be suitable for successfully realising light emitters on silicon, taking advantage of their geometry. Facet edges and sidewalls can minimise or eliminate the formation of dislocations, and due to the reduced contact area, nanostructures are little affected by dislocation networks. Here we demonstrate the potential of indium phosphide quantum dots as efficient light emitters on CMOS-compatible silicon substrates, with luminescence characteristics comparable to mature devices realised on III-V substrates. For the first time, electrically driven single-photon emission on silicon is presented, meeting the wavelength range of silicon avalanche photo diodes' highest detection efficiency