Dynamics of a localized spin excitation close to the spin-helix regime

The time evolution of a local spin excitation in a (001)-confined two-dimensional electron gas subjected to Rashba and Dresselhaus spin-orbit interactions of similar strength is investigated theoretically and compared with experimental data. Specifically, the consequences of the finite spatial extension of the initial spin polarization is studied for non-balanced Rashba and Dresselhaus terms and for finite cubic Dresselhaus spin-orbit interaction. We show that the initial out-of-plane spin polarization evolves into a helical spin pattern with a wave number that gradually approaches the value $q_0$ of the persistent spin helix mode. In addition to an exponential decay of the spin polarization that is proportional to both the spin-orbit imbalance and the cubic Dresselhaus term, the finite width $w$ of the spin excitation reduces the spin polarization by a factor that approaches $\exp(-q_0^2 w^2/2)$ at longer times.Comment: 8 pages, 7 figure

Technologies for 3D Heterogeneous Integration

3D-Integration is a promising technology towards higher interconnect densities and shorter wiring lengths between multiple chip stacks, thus achieving a very high performance level combined with low power consumption. This technology also offers the possibility to build up systems with high complexity just by combining devices of different technologies. For ultra thin silicon is the base of this integration technology, the fundamental processing steps will be described, as well as appropriate handling concepts. Three main concepts for 3D integration have been developed at IZM. The approach with the greatest flexibility called Inter Chip Via - Solid Liquid Interdiffusion (ICV-SLID) is introduced. This is a chip-to-wafer stacking technology which combines the advantages of the Inter Chip Via (ICV) process and the solid-liquid-interdiffusion technique (SLID) of copper and tin. The fully modular ICV-SLID concept allows the formation of multiple device stacks. A test chip was designed and the total process sequence of the ICV-SLID technology for the realization of a three-layer chip-to-wafer stack was demonstrated. The proposed wafer-level 3D integration concept has the potential for low cost fabrication of multi-layer high-performance 3D-SoCs and is well suited as a replacement for embedded technologies based on monolithic integration. To address yield issues a wafer-level chip-scale handling is presented as well, to select known-good dies and work on them with wafer-level process sequences before joining them to integrated stacks.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838

Chaos assisted adiabatic passage

We study the exact dynamics underlying stimulated Raman adiabatic passage (STIRAP) for a particle in a multi-level anharmonic system (the infinite square-well) driven by two sequential laser pulses, each with constant carrier frequency. In phase space regions where the laser pulses create chaos, the particle can be transferred coherently into energy states different from those predicted by traditional STIRAP. It appears that a transition to chaos can provide a new tool to control the outcome of STIRAP

Radio-Frequency Single-Electron Refrigerator

We propose a cyclic refrigeration principle based on mesoscopic electron transport. Synchronous sequential tunnelling of electrons in a Coulomb-blockaded device, a normal metal-superconductor single-electron box, results in a cooling power of $\sim k_{\rm B}T \times f$ at temperature $T$ over a wide range of cycle frequencies $f$. Electrostatic work, done by the gate voltage source, removes heat from the Coulomb island with an efficiency of $\sim k_{\rm B}T/\Delta$, where $\Delta$ is the superconducting gap. The performance is not affected significantly by non-idealities, for instance by offset charges. We propose ways of characterizing the system and of its practical implementation.Comment: 5 pages, 4 figures; corrected typos, language improve

Phase Diagram for a 2-D Two-Temperature Diffusive XY Model

Using Monte Carlo simulations, we determine the phase diagram of a diffusive two-temperature XY model. When the two temperatures are equal the system becomes the equilibrium XY model with the continuous Kosterlitz-Thouless (KT) vortex-antivortex unbinding phase transition. When the two temperatures are unequal the system is driven by an energy flow through the system from the higher temperature heat-bath to the lower temperature one and reaches a far-from-equilibrium steady state. We show that the nonequilibrium phase diagram contains three phases: A homogenous disordered phase and two phases with long range, spin-wave order. Two critical lines, representing continuous phase transitions from a homogenous disordered phase to two phases of long range order, meet at the equilibrium the KT point. The shape of the nonequilibrium critical lines as they approach the KT point is described by a crossover exponent of phi = 2.52 \pm 0.05. Finally, we suggest that the transition between the two phases with long-range order is first-order, making the KT-point where all three phases meet a bicritical point.Comment: 5 pages, 4 figure