The initial effects of a Mulligan's mobilization with movement technique on range of movement and pressure pain threshold in pain-limited shoulders

There is little known about the specific manual therapy techniques used to treat painfully limited shoulders and their effects on range of movement (ROM) and pressure pain threshold (PPT). The objective of this study was to investigate the initial effects of a Mulligan's mobilization with movement (MWM) technique on shoulder ROM in the plane of the scapula and PPT in participants with anterior shoulder pain. A repeated measures, double-blind randomized-controlled trial with a crossover design was conducted with 24 subjects (11 mates and 13 females). ROM and PPT were measured before and after the application of MWM, sham and control conditions. Significant and clinically meaningful improvements in both ROM (15.3%, F (2,46) = 16.31 P = 0.00) and PPT (20.2%, F(2,46) = 3.44, P = 0.04) occurred immediately after post treatment. The results indicate that this specific manual therapy treatment has an immediate positive effect on both ROM and pain in subjects with painful limitation of shoulder movement. Further study is needed to evaluate the duration of such effects and the mechanism by which this occurs. (c) 2006 Elsevier Ltd. All rights reserved

Initial changes in posterior talar glide and dorsiflexion of the ankle after mobilization with movement in individuals with recurrent ankle sprain

Study Design: A double-blind randomized crossover experimental study with repeated measures, including a no-treatment control condition

Time Course and the Effects of taping of a Mulligan’s mobilization-with-movement manual therapy technique in pain limited shoulders

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Formation of Ge/Si nanoscale structures at different growth conditions by molecular beam epitaxy

Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by changing of growth parameters. Formation of Ge quantum dots in hut-island form is observed during deposition of Ge on Si film or GeSi solid solution layer in temperature range between 300 and 500 °C. Density of Ge islands without use of surfactant reaches 3.5 · 1011 cm–2 at lateral size of 12 nm. Lowering growth temperature up to 300 °C emergence of quantum fortress array takes place at deposition of Ge on GeSi solid solution layer. By depositing a Ge wetting layer at thickness of 3–5 monolayers and subsequent continuous annealing we have obtained nano-structures in form of wires. The results of these studies are of great applied value in the field of infrared photodetectors and single-hole transistors