Evolution of an Atom Impeded by Measurement: The Quantum Zeno Effect

A quantum system being observed evolves more slowly. This `'quantum Zeno effect'' is reviewed with respect to a previous attempt of demonstration, and to subsequent criticism of the significance of the findings. A recent experiment on an {\it individual} cold trapped ion has been capable of revealing the micro-state of this quantum system, such that the effect of measurement is indeed discriminated from dephasing of the quantum state by either the meter or the environment.Comment: 6 pages, 5 figures. Presented at the 3rd Workshop on Mysteries, Puzzles and Paradoxes in Quantum Mechanics, Gargagno, Italy, September 17-23, 200

Error-resistant Single Qubit Gates with Trapped Ions

Coherent operations constitutive for the implementation of single and multi-qubit quantum gates with trapped ions are demonstrated that are robust against variations in experimental parameters and intrinsically indeterministic system parameters. In particular, pulses developed using optimal control theory are demonstrated for the first time with trapped ions. Their performance as a function of error parameters is systematically investigated and compared to composite pulses.Comment: 5 pages 5 figure

Anomalous Hall effect and weak localization corrections in a ferromagnet

In this paper, we report results on the anomalous Hall effect. First, we summarize analytical calculations based on the Kubo formalism : explicit expressions for both skew-scattering and side-jump are derived and weak-localization corrections are discussed. Next, we present numerical calculations of the anomalous Hall resistivity based on the Dirac equation. Qualitative agreement with experiments is obtained.Comment: Proceeding JEMS'0

Spin Hall effect transistor

Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel.Comment: 11 pages, 3 figure

Simultaneous cooling of axial vibrational modes in a linear ion trap

In order to use a collection of trapped ions for experiments where a well-defined preparation of vibrational states is necessary, all vibrational modes have to be cooled to ensure precise and repeatable manipulation of the ions quantum states. A method for simultaneous sideband cooling of all axial vibrational modes is proposed. By application of a magnetic field gradient the absorption spectrum of each ion is modified such that sideband resonances of different vibrational modes coincide. The ion string is then irradiated with monochromatic electromagnetic radiation, in the optical or microwave regime, for sideband excitation. This cooling scheme is investigated in detailed numerical studies. Its application for initializing ion strings for quantum information processing is extensively discussed

Spin gating electrical current

We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-monotonic behavior. The observed effects are explained by calculations based on the $\mathbf{k}\cdot\mathbf{p}$ kinetic exchange model of ferromagnetism in GaMnAs. Our device inverts the conventional approach for constructing spin transistors: instead of spin-transport controlled by ordinary gates we spin-gate ordinary charge transport.Comment: 5 pages, 4 figure