An analytical model for the threshold voltage of a narrow-width MOSFET

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Electrical properties of different NO-annealed oxynitrides

This journal issues contain proceedings of the 2nd International Conference on Amorphous and Crystalline Insulating Thin Films II ... 1998Performances of gate dielectrics prepared by double-nitridation in NO and N2O are investigated. Stronger oxide/Si interface bonding, less charge trapping and larger charge-to-breakdown are observed for such gate dielectrics than singly NO-nitrided gate dielectric. The physical mechanisms behind the findings are attributed to larger nitrogen peak concentration located almost at the oxide/Si interface and total nitrogen content near the oxide/Si interface of these gate dielectrics.postprin

Improvement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardment

The 1/f noise properties of nitrided n-MOSFET's bombarded by low-energy (550 eV) argon-ion beam are investigated. It is found that after bombardment, 1/f noise, and its degradation under hot-carrier stress are reduced, and both exhibit a turnaround behavior with bombardment time for a given ion energy and intensity. The physical mechanism involved is probably enhanced interface hardness resulting from bombardment-induced stress relief in the vicinity of the oxide/Si interface. Moreover, from the frequency dependence of the noise, it is revealed that the nitrided devices have a nonuniform trap distribution increasing toward the oxide/Si interface which can be modified by the backsurface bombardment.published_or_final_versio

Interface properties of NO-annealed N2O-grown oxynitride

The oxide/Si interface properties of gate dielectric prepared by annealing N2O-grown oxide in an NO ambient are intensively investigated and compared to those of O2-grown oxide with the same annealing conditions. Hot-carrier stressings show that the former has a harder oxide/Si interface and near-interface oxide than the latter. As confirmed by SIMS analysis, this is associated with a higher nitrogen peak concentration near the oxide/Si interface and a larger total nitrogen content in the former, both arising from the initial oxidation in N2O instead of O2.published_or_final_versio

Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's

AC-stress-induced degradation of 1/f noise is investigated for n-MOSFET's with thermal oxide or nitrided oxide as gate dielectric, and the physical mechanisms involved are analyzed. It is found that the degradation of 1/f noise under ac stress is far more serious than that under dc stress. For an ac stress of VG = 0 approx. 0.5 VD, generations of both interface state (ΔDit) and neutral electron traps (ΔNet) are responsible for the increase of 1/f noise, with the former being dominant. For another ac stress of VG = 0 approx. VD, a large increase of 1/f noise is observed for the thermal-oxide device, and is attributed to enhanced ΔNet and generation of another specie of electron traps, plus a small amount of ΔDit. Moreover, under the two types of ac stress conditions, much smaller degradation of 1/f noise is observed for the nitrided device due to considerably improved oxide/Si interface and near-interface oxide qualities associated with interfacial nitrogen incorporation.published_or_final_versio

Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation

Quality of low-pressure chemical-vapor-deposited (LPCVD) oxide and N2O-nitrided LPCVD (LN2ON) oxide is investigated under high-field stress conditions as compared to thermal oxide. It is found that LPCVD oxide has lower midgap interface-state density Dit-m and smaller stress-induced Dit-m increase than thermal oxide, but exhibits enhanced electron trapping rate and degraded charge-to-breakdown characteristics, which, however, are significantly suppressed in LN2ON oxide, suggesting effective elimination of hydrogen-related species. Moreover, LN2ON oxide shows further improved Si/SiO2 interface due to interfacial nitrogen incorporation. © 1997 American Institute of Physics.published_or_final_versio

Improved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment

Effects of preoxidation NH3 treatment on p-type 6H–SiC/SiO2 interface properties were investigated as compared to conventional thermally oxidized devices. It was found that NH3 treatment before oxidation can reduce the SiC/SiO2 interface states and fixed oxide charge. Furthermore, less shift of flatband voltage, and smaller increases of effective oxide charge and interface states during high-field stress were observed for the NH3 pretreated devices. © 2000 American Institute of Physics.published_or_final_versio

Enhanced mobility for pentacene TFT built on NH3-annealed thermally grown SiO2

We have enhanced the mobility of pentacene OTFTs using NH 3-annealed SiO2 as gate dielectric and this annealing method is often applied in the semiconductor industry for inorganic transistors. The device has field-effect mobility higher than 0.5 cm2/Vs, with on/off current ratio larger than 106, and subthreshold slope less than 2.5 V per decade. When compared with the control sample, which uses N 2-annealed SiO2, the mobility of the proposed pentacene OTFT increases by over 50%. © 2005 IEEE.published_or_final_versio

1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses

Degradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate- and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis. © 1999 American Institute of Physics.published_or_final_versio

A comparison between NO-annealed O2- and N2O-grown gate dielectrics

Qualities of oxynitrides prepared by annealing O2- and N2O-grown oxides in NO ambient are investigated. Harder oxide/Si interface, less charge trapping and higher charge-to-breakdown characteristics are observed in NO-annealed N2O-grown (N2ONO) oxynitride than NO-annealed O2-grown (O2NO) oxynitride. The involved mechanism lies in higher interfacial nitrogen concentration and total nitrogen content in N2ONO oxynitride than O2NO oxynitride for the same anneal temperature and time.published_or_final_versio