Gain Enhancement of a Wide Slot Antenna Using a Second-Order Bandpass Frequency Selective Surface

Gain enhancement of a wide slot antenna over a wide frequency band using a low profile, second order bandpass frequency selective surface (FSS) as a superstrate is presented in this paper. The proposed multilayered FSS with non-resonant unit cells in each layer allows in-phase transmission of waves radiated from the antenna over a 3dB bandwidth of about 50%. The design allows an enhancement of upto 4dBi in the antenna gain over the entire frequency band (5-8GHz) of operation. The FSS provides a very low insertion loss between the two transmission poles along with a linearly decreasing transmission phase over the band. The composite structure shows an impedance bandwidth (-10dB) of 65% with an average gain between 6-8dBi over the frequency band with a peak gain of 9dBi. Measurement results of the fabricated prototype matches well with the predicted values

A Dual Layer Frequency Selective Surface Reflector for Wideband Applications

A dual-layer, bandstop frequency selective surface (FSS) is presented in this paper for wideband applications. Each layer uses patch type FSS with slots for miniaturization and are cascaded with an air gap in between. The low-profile FSS with unit cell dimension on the order of 0.2λ0×0.2λ0 provides transmission coefficient below -10dB in the frequency range of 4-7 GHz with 56% bandwidth. The FSS exhibits a nearly linear phase variation with frequency in the operating band and can be used as a substrate below planar wide band antennas with bi-directional radiation for enhancing its gain, directivity in the broadside direction as well as shielding it against nearby conductive surfaces such as metal cases, other printed antennas. Detailed design method, equivalent circuit analysis and measurement results of the FSS are presented in this paper

Modeling of Modified Split-Ring Type Defected Ground Structure and Its Application as Bandstop Filter

The shape of a popular split-ring defected ground structure (DGS) is modified by selecting different width of the sides with respect to microstrip line. The frequency characteristics of proposed DGS unit show an attenuation zero close to the attenuation pole frequency. The unit cell is modeled by 3rd order elliptical lowpass filter and an equivalent circuit is presented accordingly. For proposed DGS, both pole and zero frequencies are obtained at lower values compared to split-ring DGS unit with uniform width. The variation of the width of the sides, parallel to microstrip line influences pole frequency. Two DGS cells with different pole frequencies cascaded under High-Low microstrip line realize a sharp and deep bandstop filter. Three-cascaded cells underneath a highlow impedance microstrip line produce sharper and wider bandstop filter characteristics

Frequency driven inversion of tunnel magnetoimpedance in magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs crucial for exploring this regime. Here we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{_2}O{_3}/NiFe MTJ, whereas we only observe a gradual decrease of tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime, in which the spin-polarized charge accumulation at the two interfaces plays a crucial role.Comment: 13 pages, 7 figure

Comparison of hot-electron transmission in ferromagnetic Ni on epitaxial and polycrystalline Schottky interfaces

The hot-electron attenuation length in Ni is measured as a function of energy across two different Schottky interfaces viz. a polycrystalline Si(111)/Au and an epitaxial Si(111)/NiSi_2 interface using ballistic electron emission microscopy (BEEM). For similarly prepared Si(111) substrates and identical Ni thickness, the BEEM transmission is found to be lower for the polycrystalline interface than for the epitaxial interface. However, in both cases, the hot-electron attenuation length in Ni is found to be the same. This is elucidated by the temperature-independent inelastic scattering, transmission probabilities across the Schottky interface, and scattering at dissimilar interfaces.Comment: 5 pages, 5 figure