The influence of microlensing on the shape of the AGN Fe K-alpha line

We study the influence of gravitational microlensing on the AGN Fe K-alpha line confirming that unexpected enhancements recently detected in the iron line of some AGNs can be produced by this effect. We use a ray tracing method to study the influence of microlensing in the emission coming from a compact accretion disc considering both geometries, Schwarzschild and Kerr. Thanks to the small dimensions of the region producing the AGN Fe K-alpha line, the Einstein Ring Radii associated to even very small compact objects have size comparable to the accretion disc hence producing noticeable changes in the line profiles. Asymmetrical enhancements contributing differently to the peaks or to the core of the line are produced by a microlens, off-centered with respect to the accretion disc. In the standard configuration of microlensing by a compact object in an intervening galaxy, we found that the effects on the iron line are two orders of magnitude larger than those expected in the optical or UV emission lines. In particular, microlensing can satisfactorily explain the excess in the iron line emission found very recently in two gravitational lens systems, H 1413+117 and MG J0414+0534. Exploring other physical {scenario} for microlensing, we found that compact objects (of the order of one Solar mass) which belong to {the bulge or the halo} of the host galaxy can also produce significant changes in the Fe K$_\alpha$ line profile of an AGN. However, the optical depth estimated for this type of microlensing is {very small, $\tau\sim 0.001$, even in a favorable case.Comment: Astron. Astrophys. accepte

Using the Fermilab Proton Source for a Muon to Electron Conversion Experiment

The Fermilab proton source is capable of providing 8 GeV protons for both the future long-baseline neutrino program (NuMI), and for a new program of low energy muon experiments. In particular, if the 8 GeV protons are rebunched and then slowly extracted into an external beamline, the resulting proton beam would be suitable for a muon-to-electron conversion experiment designed to improve on the existing sensitivity by three orders of magnitude. We describe a scheme for the required beam manipulations. The scheme uses the Accumulator for momentum stacking, and the Debuncher for bunching and slow extraction. This would permit simultaneous operation of the muon program with the future NuMI program, delivering 10^20 protons per year at 8 GeV for the muon program at the cost of a modest (~10%) reduction in the protons available to the neutrino program.Comment: 18 pages, 7 figure

Bipolar-Driven Large Magnetoresistance in Silicon

Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the magnetic field modulation of electron-to-hole density ratio controls the MR, as indicated by the magnetic field dependence of Hall coefficient in the silicon device. Contrary to the space-charge-induced MR effect in unipolar silicon device, where the large linear MR is inhomogeneity-induced, our results provide a different insight into the mechanism of large linear MR in non-magnetic semiconductors that is not based on the inhomogeneity model. This approach enables homogeneous semiconductors to exhibit large linear MR at low magnetic fields that until now has only been appearing in semiconductors with strong inhomogeneities.Comment: 23 pages, 4 figures (main text), 6 figures (supplemental material

Microglial activation arises after aggregation of phosphorylated-tau in a neuron-specific P301S tauopathy mouse model

Alzheimer's disease, progressive supranuclear palsy and frontotemporal dementia are characterized by neuronal expression of aberrant tau protein, tau hyperphosphorylation (pTAU), tau aggregation and neurofibrillary tangle formation sequentially culminating into neuronal cell death, a process termed tauopathy. Our aim was to address at which tauopathy stage neuroinflammation starts and to study the related microglial phenotype. We used Thy1-hTau.P301S (PS) mice expressing human tau with a P301S mutation specifically in neurons. Significant levels of cortical pTAU were present from 2 months onwards. Dystrophic morphological complexity of cortical microglia arose after pTAU accumulation concomitant with increased microglial lysosomal volumes and a significant loss of homeostatic marker Tmem119. Interestingly, we detected increases in neuronal pTAU and postsynaptic structures in the lysosomes of PS microglia. Moreover, the overall cortical postsynaptic density was decreased in 6-month-old PS mice. Together, our results indicate that microglia adopt a pTAU-associated phenotype, and are morphologically and functionally distinct from wild-type microglia after neuronal pTAU accumulation has initiated

Metal-insulator transition in disordered 2DEG including temperature effects

We calculate self-consistently the mutual dependence of electron correlations and electron-defect scattering for a two dimensional electron gas at finite temperature. We employ an STLS approach to calculate the electron correlations while the electron scattering rate off Coulombic impurities and surface roughness is calculated using self-consistent current-relaxation theory. The methods are combined and self-consistently solved. We discuss a metal-insulator transition for a range of disorder levels and electron densities. Our results are in good agreement with recent experimental observations.Comment: 4 pages, RevTeX + epsf, 5 figure

Metal Insulator transition at B=0 in p-SiGe

Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a resistivity that decreases exponentially with decreasing temperature. This behaviour, and the duality between resistivity and conductivity on the two sides of the transition, are very similar to that recently reported for high mobility Si-MOSFETs.Comment: 4 pages, REVTEX with 3 ps figure

Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the $0 - 5$K temperature range, with the low density, low temperature mobility showing a strikingly strong non-monotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.Comment: 5 pages, 2 figures, will appear in PRL (12 July, 1999