An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by taking into account the effects of nonidealities such as threshold voltage variation and sensor noise. The model is evaluated through a number of devices with varying design parameters (chemical sensing area and MOSFET dimensions) fabricated in a commercially available 0.35-µm CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift, and noise were measured and compared with the simulated results. The first- and second-order effects are analyzed in detail, and it is shown that the sensors' performance was in agreement with the proposed model

A CMOS-Based Lab-on-Chip Array for Combined Magnetic Manipulation and Opto-Chemical Sensing

Accepted versio

A CMOS-based Lab-on-Chip Array for the Combined Magnetic Stimulation and Opto-Chemical Sensing of Neural Tissue

This paper presents a novel CMOS-based lab-on-chip platform for non-contact magnetic stimulation and recording of neural tissue. The proposed system is the first of its kind to integrate magnetic-stimulation and opto-chemical sensing in a single pixel, tesselated to form an 8 à 8 array. Fabricated in a commercially-available 0.35 ¿m CMOS technology, the system can be intrinsically used for both optical imaging and pH sensing and includes mechanisms for calibrating out sensor variation and mismatch. In addition to sensory acquisition via an integrated 10-bit ADC, a 64-instruction spatiotemporal pattern generator has been embedded within the array for driving the microscale magnetic neural stimulation. In this application the ISFET-based sensors are used to capacitively-couple neuronal charge in close proximity to the floating gate. Optical imaging hardware has also been embedded to provide topographic detail of the neural tissue.Published versio

Cost-effective fabrication of nanoscale electrode memristors with reproducible electrical response

Accepted versio

Experimental study of gradual/abrupt dynamics of HfO₂-based 1 memristive devices

The resistance switching dynamics of TiN/HfO2/Pt devices is analyzed in this paper. When biased with a voltage ramp of appropriate polarity, the devices experience SET transitions from high to low resistance states in an abrupt manner, which allows identifying a threshold voltage. However, we find that the stimulation with trains of identical pulses at voltages near the threshold results in a gradual SET transition, whereby the resistive state visits a continuum of intermediate levels as it approaches some low resistance state limit. On the contrary, RESET transitions from low to high resistance states proceed in a gradual way under voltage ramp stimulation, while gradual resistance changes driven by trains of identical spikes cover only a limited resistance window. The results are discussed in terms of the relations among the thermo-electrochemical effects of Joule heating, ion mobility, and resistance change, which provide positive and negative closed loop processes in SET and RESET, respectively. Furthermore, the effect of the competition between opposite tendencies of filament dissolution and formation at opposite metal/HfO2 interfaces is discussed as an additional ingredient affecting the switching dynamics

Target cells of human adenovirus type 12 in subtentorial brain tissue of newborn mice. I. Cyto-histomorphologic and immunofluorescent microscopic studies In vivo

Human adenovirus type 12 (Ad 12) was inoculated through subtentorial route into inbred newborn mice (C3H/BifB/Ki), and sequential changes of the brain and tumor induction were examined by histological and immunofluorescent methods. Two days after virus inoculation, Ad 12 specific tumor antigen (fluorescent T-antigen) appeared in the cells of ependymal and subventricular matrix layers, choroid plexuses and leptomeninges in the subtentorial as well as the supratentorial brains. After 10 days, these fluorescent positive cells decreased gradually in number but still remained focally beneath the ependyma. Sixty days later, early tumor nodules were detected in the same regions in which remained the fluorescent cells. After 107 days, neurological signs and well-developed tumors were noted in 25 of 63 (30.1%) mice examined. In the cerebellum, both of T-antigens and tumors were limited around the IVth ventricle, but not in the granular layers. Histomorphologically, the tumors were of primitive neuroectodermal origin and consisted of the cells resembling immature matrix cells in the subventricular zone. These findings strongly suggest that the virus has a selective affinity to the remaining matrix cells, but not to cerebellar granular cells, at least, in newborn mice.</p

Emulating long-term synaptic dynamics with memristive devices

The potential of memristive devices is often seeing in implementing neuromorphic architectures for achieving brain-like computation. However, the designing procedures do not allow for extended manipulation of the material, unlike CMOS technology, the properties of the memristive material should be harnessed in the context of such computation, under the view that biological synapses are memristors. Here we demonstrate that single solid-state TiO2 memristors can exhibit associative plasticity phenomena observed in biological cortical synapses, and are captured by a phenomenological plasticity model called triplet rule. This rule comprises of a spike-timing dependent plasticity regime and a classical hebbian associative regime, and is compatible with a large amount of electrophysiology data. Via a set of experiments with our artificial, memristive, synapses we show that, contrary to conventional uses of solid-state memory, the co-existence of field- and thermally-driven switching mechanisms that could render bipolar and/or unipolar programming modes is a salient feature for capturing long-term potentiation and depression synaptic dynamics. We further demonstrate that the non-linear accumulating nature of memristors promotes long-term potentiating or depressing memory transitions

Role and optimization of the active oxide layer in TiO₂-based RRAM

TiO2 is commonly used as the active switching layer in resistive random access memory. The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO2 layer and at the interfaces between it and the surrounding electrodes. However, it is complex to disentangle the effects of film “bulk” properties and interface phenomena. The present work uses hard X-ray photoemission spectroscopy (HAXPES) at different excitation energies to distinguish between these regimes. Changes are found to affect the entire thin film, but the most dramatic effects are confined to an interface. These changes are connected to oxygen ions moving and redistributing within the film. Based on the HAXPES results, post-deposition annealing of the TiO2 thin film was investigated as an optimisation pathway in order to reach an ideal compromise between device resistivity and lifetime. The structural and chemical changes upon annealing are investigated using X-ray absorption spectroscopy and are further supported by a range of bulk and surface sensitive characterisation methods. In summary, it is shown that the management of oxygen content and interface quality is intrinsically important to device behavior and that careful annealing procedures are a powerful device optimisation technique