10 research outputs found
Phase evolution of EBPVD coated ceria-zirconia nanostructure and its impact on high temperature oxidation of AISI 304.
The present work focusses on the effect of nanocrystalline xCeO2 – (1-x)ZrO2 (x = 1, 0.75, 0.5, 0.25 and 0 in wt% abbreviated as C100, C75Z25, C50Z50, C25Z75 and Z100) coated by electron beam physical vapour deposition (EBPVD) on AISI 304 and its implication on the high-temperature oxidation protection. The oxidation kinetics indicate that the samples C100, C75Z25 and C50Z50 show 3–4 orders better oxidation protection than uncoated AISI 304. Coating morphology and composition play an important role in developing superior nanostructures against high temperature oxidation. The development of ceria-zirconia coating helps in the realization of structural materials for elevated temperature application
Impact of structure and morphology of nanostructured ceria coating on AISI 304 oxidation kinetics
Effect of EBPVD coated nanoceria thickness on the isothermal oxidation of AISI 304 stainless steel
Effect of fuel ratio on combustion synthesis and properties of magnetic nanostructures
Effect of SnS thin film thickness on visible light photo detection
Abstract
In this study, SnS thin films of various thicknesses (500 nm–700 nm) were prepared by the thermal evaporation technique for potential photodetector application. High purity SnS prepared at 1000 °C is used to deposit thin films at room temperature. The prepared SnS thin films were characterized to assess the thickness effect on the crystallite size, morphology, transmittance, band gap, and photo-sensing properties. SnS pure phase confirmed through XRD and Raman spectral analysis. Among the fabricated SnS thin films, the sample having a thickness of 650 nm showed better crystallinity with higher crystallite size and preferred orientation of crystallites. SnS grew plate-like-columnar grain morphology of different widths and thicknesses which is confirmed by FESEM results. The UV–Vis studies showed a minimum band gap value obtained for 650 nm thickness film. The 650 nm thickness SnS films have a highest photo response of 6.72 × 10−1 AW−1, external quantum efficiency (EQE) of 157%, and detectivity of 14.2 × 109 Jones. The transient photo-response analysis showed the 650 nm SnS thin film has a 5.3 s rise and 5.1 s fall duration, which is better suitable for photodetector applications compared to other samples.</jats:p
