Aging and gate bias effects on TID sensitivity of wide bandgap power devices

The effect of oxide stress on the total ionizing dose (TID) radiation sensitivity of silicon carbide (SiC) power MOSFETS and TID sensitivity of gallium nitride (GaN) power transistor is reported. Difference in TID response for stressed and unstressed devices was observed

Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

International audienceIn this work, we demonstrate that atomic force microscopy allows topography measurement as well as the local electrical properties of very high-doped polysilicon film prior to any subsequent annealing. AFM and TEM observations showed the columnar microstructure of the polysilicon layer. The electrical effect of this microstructure was characterized using SCM, KFM and C-AFM. Each electric mode gives additional information on the local properties of the polysilicon layer

Correlation between electron and proton induced permanent degradation in a COTS optocoupler

International audienc

Correlation between electron and proton induced permanent degradation in a COTS optocoupler

International audienc

Low Frequency Noise Spectroscopy: A Powerful Diagnostic Tool for Trap Identification in Active and Passive Components

International audienceAbstract Low-frequency noise spectroscopy is a promising characterization technique for nanoscale devices and failure analysis investigations. This article describes and shows how low-frequency noise spectroscopy can be applied to identify stable traps induced by proton irradiations on silicon passive devices. The work focuses on traps located in the depleted region of the semiconductor material of already studied nanoscale transistor technologies

Mapping of High Modulus Materials at the Nanoscale: Comparative Study between by Atomic Force Microscopy and Nanoindentation

peer reviewe

Hardening of a radiation sensor based on optically stimulated luminescence

International audienceThe loss of sensitivity induced by the displacement damage effect on the optically stimulated luminescent dosimeter is investigated. A new architecture is proposed and successfully tested to harden the sensor at system level