Coconut fat and serum lipoproteins: effects of partial replacement with unsaturated fats

The aim of the present study was to examine the effect of reducing saturated fat in the diet, or partly replacing it with unsaturated fat, on the serum lipoprotein profile of human subjects. The study had two intervention periods, 8 weeks (phase 1) and 52 weeks (phase 2). In phase 1, total fat was reduced from 31 to 25 % energy (polyunsaturated fatty acids (PUFA):saturated fatty acids (SFA) ratio increased from 0.2 to 0.4) by reducing the quantity of coconut fat (CF) in the diet from 17.8 to 9.3 % energy intake. In phase 2, subjects were randomised to groups A and B. In group A total fat was reduced from 25 to 20 % energy (PUFA:SFA ratio increased from 0.4 to 0.7) by reducing the quantity of CF in the diet from 9.3 to 4.7 % total energy intake. In group B, the saturated fat content in the diet was similar to group A. In addition a test fat (a mixture of soyabean oil and sesame oil, PUFA:monosaturated fatty acids ratio 2) contributed 3.3 % total energy intake and total fat contributed 24 % energy intake (PUFA:SFA ratio increased from 0.7 to 1.1). At the end of phase 1, there was a 7.7 % reduction in cholesterol (95 % CI -3.6, -12.2) and 10.8 % reduction in LDL (95 % CI -4.9, -16.5) and no significant change in HDL and triacylglycerol. At the end of phase 2, the reduction in cholesterol in both groups was only about 4 % (95 % CI -12, 3.2) partly due the concomitant rise in HDL. The reduction in LDL at 52 weeks was significantly higher in group B (group A mean reduction 11 %, 95 % CI -20.1, -2.0 and group B mean reduction 16.2 % 95 % CI -23.5, -8.9). In phase 2, triacylglycerol levels showed a mean reduction of 6.5 % in group 2A and a mean increase of 8.2 % in group 2B. The reduction of saturated fat in the diet is associated with a lipoprotein profile that would be expected to reduce cardiovascular risk. The reduction of dietary saturated fat with partial replacement of unsaturated fat brings about changes in total cholesterol, HDL- and LDL-cholesterol that are associated with a lower cardiovascular ris

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node

Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources

P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz radiation. In a direct comparison between a p-InAs emitter and conventional thermal radiationsources, we demonstrate that under typical excitation conditions p-InAs produces more radiation below 1.2 THz than a globar. By treating the globar as a blackbody emitter we calibrate a siliconbolometer which is used to determine the power of the p-InAs emitter. The emitted terahertz power was found to be 98±10 nW in this experiment

Subcutaneous Leiomyosarcoma of the Frenulum

Leiomyosarcomas of the penis are rare, with only 29 reported cases to date. We record the case of a patient who presented with a 2-year history of a seemingly indolent penile skin lesion. On histopathology of the local resection, a diagnosis of subcutaneous leiomyosarcoma was made. Specifically, leiomyosarcoma of the penile frenulum has not been clearly reported previously. The patient underwent a further excision to ensure an adequate resection margin and has had no disease recurrence at subsequent follow-up. Our case was of a lesion that, although clinically benign, was malignant and this possibility should be borne in mind when assessing patients

A Search for Cold Dust around Neutron Stars

We present observations of nine radio pulsars using the Heinrich-Hertz-Telescope at \lambda 0.87mm and the IRAM 30-m telescope at \lambda 1.2mm in search for a cold dust around these sources. Five of the program pulsars have been observed for the first time at the mm-wavelengths. The results are consistent with the absence of circumpulsar disks that would be massive enough ($\ge 0.01 M_{\odot}$) to support planet formation according to the scenarios envisioned for solar-type stars, but they do not exclude lower mass ($\le 10-100 M_{\oplus}$) disks for a wide range of grain sizes. These conclusions confirm the previously published results and, together with the current lack of further detections of pulsar planets, they suggest that planet formation around neutron stars is not a common phenomenon.Comment: 5 pages, 1 figure, accepted for publication in A&

A control theorem for pp-adic automorphic forms and Teitelbaum's L\mathcal{L}-invariant

In this article, we describe an efficient method for computing Teitelbaum's $p$-adic $\mathcal{L}$-invariant. These invariants are realized as the eigenvalues of the $\mathcal{L}$-operator acting on a space of harmonic cocycles on the Bruhat-Tits tree $\mathcal{T}$, which is computable by the methods of Franc and Masdeu described in \cite{fm}. The main difficulty in computing the $\mathcal{L}$-operator is the efficient computation of the $p$-adic Coleman integrals in its definition. To solve this problem, we use overconvergent methods, first developed by Darmon, Greenberg, Pollack and Stevens. In order to make these methods applicable to our setting, we prove a control theorem for $p$-adic automorphic forms of arbitrary even weight. Moreover, we give computational evidence for relations between slopes of $\mathcal{L}$-invariants of different levels and weights for $p=2$.Comment: 26 page

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit