Ferromagnetic Behavior of High Purity ZnO nanoparticles

ZnO nanoparticles with Wurtzite structure were prepared by chemical methods at low temperature in aqueous solution. Nanoparticles are in the range from about 10 to 30 nm. Ferromagnetic properties were observed from 2 K to room temperature and above. Magnetization vs temperature, M(T) and isothermal measurements M(H) were determined. The coercive field clearly shows ferromagnetism above room temperature. The chemical synthesis, structural defects in the bulk related to oxygen vacancies are the main factors for the observed magnetic behavior. PACS numbers: 61.46.Hk Nanocrystals, 75.50.Pp Magnetic semiconductors, 81.05.Dz II-VI semiconductor

Preparation of Ion Imprinted SPR Sensor for Real-Time Detection of Silver(I) Ion from Aqueous Solution

The aim of the submitted study is to develop molecular imprinting based surface plasmon resonance (SPR) sensor for real-time silver ion detection. For this purpose polymeric nanofilm layer on the gold SPR chip surface was prepared via UV polymerization of acrylic acid at 395 nm for 30 minutes. N-methacryloyl- L cysteine used as the functional monomer to recognize the silver(I) ions from the aqueous solutions and methylene bisacrylamide used as the crosslinker for obtaining structural rigidity of the formed cavities. Silver(I) solutions with different concentrations were applied to SPR system to investigate the efficiency of the imprinted SPR sensor in real time. For the control experiments, non-imprinted SPR sensor was also prepared as described above without addition of template “silver(I) ions”. Prepared SPR sensors were characterized with atomic force microscopy (AFM). In order to show the selectivity of the silver(I) imprinted SPR sensor, competitive adsorption of Cu(II), Pb(II), Ni(II) ions was investigated. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3489

Probability densities for the sums of iterates of the sine-circle map in the vicinity of the quasi-periodic edge of chaos

We investigate the probability density of rescaled sum of iterates of sine-circle map within quasi-periodic route to chaos. When the dynamical system is strongly mixing (i.e., ergodic), standard Central Limit Theorem (CLT) is expected to be valid, but at the edge of chaos where iterates have strong correlations, the standard CLT is not necessarily to be valid anymore. We discuss here the main characteristics of the central limit behavior of deterministic dynamical systems which exhibit quasi-periodic route to chaos. At the golden-mean onset of chaos for the sine-circle map, we numerically verify that the probability density appears to converge to a q-Gaussian with q<1 as the golden mean value is approached.Comment: 7 pages, 7 figures, 1 tabl

Probing Bottom-up Processing with Multistable Images

The selection of fixation targets involves a combination of top-down and bottom-up processing. The role of bottom-up processing can be enhanced by using multistable stimuli because their constantly changing appearance seems to depend predominantly on stimulusdriven factors. We used this approach to investigate whether visual processing models based on V1 need to be extended to incorporate specific computations attributed to V4. Eye movements of 8 subjects were recorded during free viewing of the Marroquin pattern in which illusory circles appear and disappear. Fixations were concentrated on features arranged in concentric rings within the pattern. Comparison with simulated fixation data demonstrated that the saliency of these features can be predicted with appropriate weighting of lateral connections in existing V1 models

Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects

In15.7%Al84.3%N/AlN/GaN heterojunctionfield effect transistors have been electrically stressed under four different bias conditions: on-state-low-field stress, reverse-gate-bias stress, off-state-high-field stress, and on-state-high-field stress, in an effort to elaborate on hot electron/phonon and thermal effects. DC current and phase noise have been measured before and after the stress. The possible locations of the failures as well as their influence on the electrical properties have been identified. The reverse-gate-bias stress causes trap generation around the gate area near the surface which has indirect influence on the channel. The off-state-high-field stress and the on-state-high-field stress induce deterioration of the channel, reduce drain current and increase phase noise. The channel degradation is ascribed to the hot-electron and hot-phonon effects

Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

We report on the growth of and evolution of defects in GaN epilayers having single- and double-layer SiNx nanoporous insertion layers. The SiNx was formed in situ in the growth chamber of an organometallic vapor-phase epitaxy system by simultaneous flow of diluted silane and ammonia. The GaN epilayers and SiNx interlayers were grown on 6H-SiC substrates using three different nucleation layers, namely, low-temperature GaN, high-temperature GaN, and high-temperature AlN nucleation layers. X-ray-diffraction rocking curves and cross-sectional and plan-view transmission electron microscope analyses indicated that a nanoporous SiNx layer can reduce the dislocations density in the GaN overgrown layer to ∼3×108cm−2 range; below this level the defect blocking effect of SiNx would saturate. Therefore the insertion of a second SiNx layer becomes much less effective in reducing dislocations, although it continues to reduce the point defects, as suggested by time-resolved photoluminescence measurements. The insertion of SiNx interlayers was found to improve significantly the mechanical strength of the GaN epilayers resulting in a much lower crack line density