2,235 research outputs found

    Technological survey of tellurium and its compounds

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    Review includes data on the chemical and physical properties of tellurium, its oxides, and fluorides, pertinent to the process problem of handling fission product tellurium in fluoride form. The technology of tellurium handling in nonaqueous processing of nuclear fuels is also reviewed

    Identifying capacitive and inductive loss in lumped element superconducting hybrid titanium nitride/aluminum resonators

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    We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium nitride was progressively replaced with aluminum in the inter-digitated capacitor and meandered inductor elements. By measuring the power dependent loss at 50 mK as the Al-TiN fraction in each element is increased, we find that at low electric field, i.e. in the single photon limit, the loss is two level system in nature and is correlated with the amount of Al capacitance rather than the Al inductance. In the high electric field limit, the remaining loss is linearly related to the product of the Al area times its inductance and is likely due to quasiparticles generated by stray radiation. At elevated temperature, additional loss is correlated with the amount of Al in the inductance, with a power independent TiN-Al interface loss term that exponentially decreases as the temperature is reduced. The TiN-Al interface loss is vanishingly small at the 50 mK base temperature.Comment: 10 pages, 5 figure

    PALSAR wide-area mapping and annual monitoring methodology for Borneo

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    This paper describes the operational radar mapping processing chain developed and steps taken to produce a provisional wide-area PALSAR forest and land cover map of Borneo for the year 2007, compliant with emerging international standards (CEOS guidelines, FAO LCCS). The methodology is based on the classification of FBS and FBD image pairs. To cover Borneo the equivalent of 554 standard images is required. The final overall accuracy assessment result shows this demonstration map product is in 85.5% full agreement with the independent reference dataset and in 7.8% ‘partial agreement’. Monitoring land cover change on an annual basis requires consistent year-to-year mapping. This implies that the localised and temporal effects of environmental factors on the backscatter level (such as inundation or El Niño drought) and variation due to differing observation dates/cycles (related to change of season) have to be accounted for strip by strip. New concepts for (a) automated intercalibration of radar data, (b) time-consistency and (c) automated adaptation of radar signatures to changing environmental conditions have been evaluated for its usefulness to improve the classification and the consistency of annual monitoring

    Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

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    We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone we are able to generate parametric amplification using three-wave mixing. The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. Compared to similarly constructed four-wave mixing amplifiers, these devices operate with the RF pump at \sim20 dB lower power and at frequencies far from the signal. This will permit easier integration into large scale qubit and detector applications

    Proximity-Coupled Ti/TiN Multilayers for use in Kinetic Inductance Detectors

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    We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, Tc, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from 0.8 - 2.5 K. These films had high resistivities, > 100 uOhm-cm and internal quality factors for resonators in the GHz range on the order of 100k and higher. Both trilayers of TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a highly controlled process for films over a wide thickness range. Detectors were fabricated and showed single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and other potential applications such as nanowire detectors, transition edge sensors and associated quantum information applications

    The 11 May 2011 earthquake at Lorca (SE Spain) viewed in a structural-tectonic context

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    The Lorca earthquake of 11 May 2011 in the Betic Cordillera of SE Spain occurred almost exactly on the Alhama de Murcia fault, a marked fault that forms part of a NE-SW trending belt of faults and thrusts. The fault belt is reminiscent of a strike-slip corridor, but recent structural studies have provided clear evidence for reverse motions on these faults. Focal mechanisms of the main earthquake, but also of a foreshock, are strikingly consistent with structural observations on the Alhama de Murcia fault. This strengthens the conclusion that, rather than a strike-slip fault, the fault is at present a contractional fault with an oblique reverse sense of motion, presumably in response to the NW-directed motion of Africa with respect to Europe

    Etch Induced Microwave Losses in Titanium Nitride Superconducting Resonators

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    We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on Si wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers the reactive etched resonators showed low internal loss, whereas the ion-milled samples showed dramatically higher loss. At single-photon powers we found that the fluorine-etched resonators exhibited substantially lower loss than the chlorine-etched ones. We interpret the results by use of numerically calculated filling factors and find that the silicon surface exhibits a higher loss when chlorine-etched than when fluorine-etched. We also find from microscopy that re-deposition of silicon onto the photoresist and side walls is the probable cause for the high loss observed for the ion-milled resonator
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