Inverse spectral results for Schr\"odinger operators on the unit interval with potentials in L^P spaces

We consider the Schr\"odinger operator on $[0,1]$ with potential in $L^1$. We prove that two potentials already known on $[a,1]$ ($a\in(0,{1/2}]$) and having their difference in $L^p$ are equal if the number of their common eigenvalues is sufficiently large. The result here is to write down explicitly this number in terms of $p$ (and $a$) showing the role of $p$

Tunable orbital susceptibility in α\alpha-T3{\cal T}_3 tight-binding models

We study the importance of interband effects on the orbital susceptibility of three bands $\alpha$-${\cal T}_3$ tight-binding models. The particularity of these models is that the coupling between the three energy bands (which is encoded in the wavefunctions properties) can be tuned (by a parameter $\alpha$) without any modification of the energy spectrum. Using the gauge-invariant perturbative formalism that we have recently developped, we obtain a generic formula of the orbital susceptibility of $\alpha$-${\cal T}_3$ tight-binding models. Considering then three characteristic examples that exhibit either Dirac, semi-Dirac or quadratic band touching, we show that by varying the parameter $\alpha$ and thus the wavefunctions interband couplings, it is possible to drive a transition from a diamagnetic to a paramagnetic peak of the orbital susceptibility at the band touching. In the presence of a gap separating the dispersive bands, we show that the susceptibility inside the gap exhibits a similar dia to paramagnetic transition.Comment: 15 pages,5 figs. Proceedings of the International Workshop on Dirac Electrons in Solids 2015Proceedings of the International Workshop on Dirac Electrons in Solids 201

Orbital magnetism of coupled bands models

We develop a gauge-independent perturbation theory for the grand potential of itinerant electrons in two-dimensional tight-binding models in the presence of a perpendicular magnetic field. At first order in the field, we recover the result of the so-called {\it modern theory of orbital magnetization} and, at second order, deduce a new general formula for the orbital susceptibility. In the special case of two coupled bands, we relate the susceptibility to geometrical quantities such as the Berry curvature. Our results are applied to several two-band -- either gapless or gapped -- systems. We point out some surprising features in the orbital susceptibility -- such as in-gap diamagnetism or parabolic band edge paramagnetism -- coming from interband coupling. From that we draw general conclusions on the orbital magnetism of itinerant electrons in multi-band tight-binding models.Comment: 18 pages, 9 figure

Lutte contre le mildiou (Pseudoperonospora cubensis) en culture de concombre biologique : compte-rendu d'essai 2006

Le mildiou des cucurbitacées (Pseudoperonospora cubensis) est la maladie aérienne la plus grave sur concombre en Agriculture Biologique. L’attaque est souvent foudroyante : concombre et mildiou appréciant tous deux des atmosphères chaudes et humides, il est difficile de jouer sur l’aération des tunnels pour freiner le développement de la maladie. De plus, les moyens de lutte disponibles en AB sont très limités (pas de variétés résistantes, produits fongicides encore peu efficaces et pas encore d'homologation contre le mildiou). L’objectif de cet essai est : - de confirmer l'efficacité du soufre mouillable (homologué contre oïdium) : appliqué contre les acariens dans un essai GRAB en 2004, il a montré une efficacité secondaire intéressante contre le mildiou (efficacité prouvée en 2005) - d'affiner les stratégies d'apport (doses) pour maintenir une efficacité satisfaisante sans risque de phytotoxicité. - de trouver des associations entre cuivre, soufre et d'autres produits permettant ainsi de réduire les doses d'apport. Comme les années précédentes, seul le soufre mouillable à dose réduite (500gh/hl) a permis de réduire de façon satisfaisante l’attaque de mildiou. La dose homologuée (750g/hl) n’apporte pas dans cet essai une réelle efficacité supplémentaire

Threshold switching via electric field induced crystallization in phase-change memory devices

Copyright © 2012 American Institute of PhysicsPhase-change devices exhibit characteristic threshold switching from the reset (off) to the set (on) state. Mainstream understanding of this electrical switching phenomenon is that it is initiated electronically via the influence of high electric fields on inter-band trap states in the amorphous phase. However, recent work has suggested that field induced (crystal) nucleation could instead be responsible. We compare and contrast these alternative switching “theories” via realistic simulations of device switching both with and without electric field dependent contributions to the system free energy. Results show that although threshold switching can indeed be obtained purely by electric field induced nucleation, the fields required are significantly larger than experimentally measured values

XRD TEM EELS Studies on Memory Device Structures

Over the past decade, numerous emerging memory technologies are being considered as contenders to displace either or both NAND flash and DRAM as scaling limitations of these conventional memories are perceived for applications in mobile devices. Some of these include Magnetic and Spin Transfer Torque Random Access Memory MRAM, STTRAM , Phase Change RAM PCRAM , Ferroelectric RAM and Resistive RAM memories. These technologies can be classified as relying on one of the movements atomic, ionic, electron charge or spin in nanoscale thin films comprising of a variety of materials. The literature shows about 50 elements of the periodic table being investigated for these memory applications owing to their unique physical and chemical properties. Engineering memory devices requires nanoscale characterizations of film stacks for their chemical compositions and crystalline nature in addition to electronic properties such as resistance, magnetization and polarization depending upon the principle involved. This paper focuses on how x ray diffraction XRD , transmission electron microscopy TEM and electron energy loss spectroscopy EELS techniques have been employed to obtain insight into engineering magnetic tunnel junctions MTJ and PCM device

Повышение эффективности взаимодействия проектировщиков бортовой радиоэлектронной аппаратуры космических аппаратов на базе интеграции информационных систем

Предложен подход реализации информационного взаимодействия проектировщиков бортовой радиоэлектронной аппаратуры, повышающий эффективность использования ресурсов и управление производственными процессами. Представлена концепция практической реализации предложенного подхода в среде PLM-системы Enovia SmarTeam. Разработан алгоритм сохранения данных проектов EDA-системы Altium Designer в хранилище данных PLM-системы Enovia SmarTeam. Сформирован механизм генерации конструкторских документов на базе формата хранения данных JSON