Telecom wavelength single quantum dots with very small excitonic fine-structure splitting

We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg reflector and systematically characterized by micro-photoluminescence ($\mu$-PL) measurements. One order of magnitude of QD PL intensity enhancement is observed in comparison with as-grown samples. Combination of power-dependent and polarization-resolved measurements reveal background-free exciton, biexciton and dark exciton emission with resolution-limited linewidth below 35 $\mu$eV and biexciton binding energy of ~1 meV. The results are confirmed by statistical measurements of about 20 QDs.Comment: 15 pages, 4 figure

A highly efficient single photon-single quantum dot interface

Semiconductor quantum dots are a promising system to build a solid state quantum network. A critical step in this area is to build an efficient interface between a stationary quantum bit and a flying one. In this chapter, we show how cavity quantum electrodynamics allows us to efficiently interface a single quantum dot with a propagating electromagnetic field. Beyond the well known Purcell factor, we discuss the various parameters that need to be optimized to build such an interface. We then review our recent progresses in terms of fabrication of bright sources of indistinguishable single photons, where a record brightness of 79% is obtained as well as a high degree of indistinguishability of the emitted photons. Symmetrically, optical nonlinearities at the very few photon level are demonstrated, by sending few photon pulses at a quantum dot-cavity device operating in the strong coupling regime. Perspectives and future challenges are briefly discussed.Comment: to appear as a book chapter in a compilation "Engineering the Atom-Photon Interaction" published by Springer in 2015, edited by A. Predojevic and M. W. Mitchel

Semiconductor quantum dots devices: Recent advances and application prospects

In this paper, a brief review will be given on recent advances in semiconductor quantum dots based optoelectronic devices. The focus will be on two major application areas, i.e., telecom devices and high power light sources, where some device examples will be discussed on the current status and for the future prospect

Trench width dependant deeply etched surface-defined InP gratings for low-cost high speed DFB/DBR

In this paper we are reporting a fabrication process for multi-section telecom lasers based on surface defined lateral gratings, which is compatible with low-cost high-throughput nano-imprint lithography. A new grating definition process is developed, which allow a better control of the cross section geometry to obtain higher coupling strength

Towards on-chip generation, routing and detection of non-classical light

We fabricate an integrated photonic circuit with emitter, waveguide and detector on one chip, based on a hybrid superconductor-semiconductor system. We detect photoluminescence from self-assembled InGaAs quantum dots on-chip using NbN superconducting nanowire single photon detectors. Using the fast temporal response of these detectors we perform time-resolved studies of non-resonantly excited quantum dots. By introducing a temporal filtering to the signal, we are able to resonantly excite the quantum dot and detect its resonance uorescence on-chip with the integrated superconducting single photon detector.Comment: 9 pages, 5 figure