Terahertz Saturable Absorption in Superconducting Metamaterials

We present a superconducting metamaterial saturable absorber at terahertz frequencies. The absorber consists of an array of split ring resonators (SRRs) etched from a 100nm YBaCu3O7 (YBCO) film. A polyimide spacer layer and gold ground plane are deposited above the SRRs, creating a reflecting perfect absorber. Increasing either the temperature or incident electric field (E) decreases the superconducting condensate density and corresponding kinetic inductance of the SRRs. This alters the impedance matching in the metamaterial, reducing the peak absorption. At low electric fields, the absorption was optimized near 80% at T=10K and decreased to 20% at T=70K. For E=40kV/cm and T=10K, the peak absorption was 70% decreasing to 40% at 200kV/cm, corresponding to a modulation of 43%

Structural Control of Metamaterial Oscillator Strength and Electric Field Enhancement at Terahertz Frequencies

The design of artificial nonlinear materials requires control over the internal resonant charge densities and local electric field distributions. We present a MM design with a structurally controllable oscillator strength and local electric field enhancement at terahertz frequencies. The MM consists of a split ring resonator (SRR) array stacked above an array of nonresonant closed conducting rings. An in-plane, lateral shift of a half unit cell between the SRR and closed ring arrays results in a decrease of the MM oscillator strength by a factor of 4 and a 40% change in the amplitude of the resonant electric field enhancement in the SRR capacitive gap. We use terahertz time-domain spectroscopy and numerical simulations to confirm our results and we propose a qualitative inductive coupling model to explain the observed electromagnetic reponse.Comment: 11 pages, 5 figure

Electromechanically Tunable Metasurface Transmission Waveplate at Terahertz Frequencies

Dynamic polarization control of light is essential for numerous applications ranging from enhanced imaging to materials characterization and identification. We present a reconfigurable terahertz metasurface quarter-waveplate consisting of electromechanically actuated micro-cantilever arrays. Our anisotropic metasurface enables tunable polarization conversion cantilever actuation. Specifically, voltage-based actuation provides mode selective control of the resonance frequency, enabling real-time tuning of the polarization state of the transmitted light. The polarization tunable metasurface has been fabricated using surface micromachining and characterized using terahertz time domain spectroscopy. We observe a ~230 GHz cantilever actuated frequency shift of the resonance mode, sufficient to modulate the transmitted wave from pure circular polarization to linear polarization. Our CMOS-compatible tunable quarter-waveplate enriches the library of terahertz optical components, thereby facilitating practical applications of terahertz technologies

Decoupling Crossover in Asymmetric Broadside Coupled Split Ring Resonators at Terahertz Frequencies

We investigate the electromagnetic response of asymmetric broadside coupled split ring resonators (ABC-SRRs) as a function of the relative in-plane displacement between the two component SRRs. The asymmetry is defined as the difference in the capacitive gap widths (\Delta g) between the two resonators comprising a coupled unit. We characterize the response of ABC-SRRs both numerically and experimentally via terahertz time-domain spectroscopy. As with symmetric BC-SRRs (\Delta g=0 \mu m), a large redshift in the LC resonance is observed with increasing displacement, resulting from changes in the capacitive and inductive coupling. However, for ABC-SRRs, in-plane shifting between the two resonators by more than 0.375Lo (Lo=SRR sidelength) results in a transition to a response with two resonant modes, associated with decoupling in the ABC-SRRs. For increasing \Delta g, the decoupling transition begins at the same relative shift (0.375Lo), though with an increase in the oscillator strength of the new mode. This strongly contrasts with symmetric BC-SRRs which present only one resonance for shifts up to 0.75Lo. Since all BC-SRRs are effectively asymmetric when placed on a substrate, an understanding of ABC-SRR behavior is essential for a complete understanding of BC-SRR based metamaterials

Three-dimensional broadband tunable terahertz metamaterials

We present optically tunable magnetic 3D metamaterials at terahertz (THz) frequencies which exhibit a tuning range of ~30% of the resonance frequency. This is accomplished by fabricating 3D array structures consisting of double-split-ring resonators (DSRRs) on silicon-on-sapphire, fabricated using multilayer electroplating. Photoexcitation of free carriers in the silicon within the capacitive region of the DSRR results in a red-shift of the resonant frequency from 1.74 THz to 1.16 THz. The observed frequency shift leads to a transition from a magnetic-to-bianisotropic response as verified through electromagnetic simulations and parameter retrieval. Our approach extends dynamic metamaterial tuning to magnetic control, and may find applications in switching and modulation, polarization control, or tunable perfect absorbers.Comment: 5page

Terahertz radiation-induced sub-cycle field electron emission across a split-gap dipole antenna

We use intense terahertz pulses to excite the resonant mode (0.6 THz) of a micro-fabricated dipole antenna with a vacuum gap. The dipole antenna structure enhances the peak amplitude of the in-gap THz electric field by a factor of ~170. Above an in-gap E-field threshold amplitude of ~10 MVcm-1, THz-induced field electron emission is observed (TIFEE) as indicated by the field-induced electric current across the dipole antenna gap. Field emission occurs within a fraction of the driving THz period. Our analysis of the current (I) and incident electric field (E) is in agreement with a Millikan-Lauritsen analysis where log (I) exhibits a linear dependence on 1/E. Numerical estimates indicate that the electrons are accelerated to a value of approximately one tenth of the speed of light.Comment: 15 pages, 5 figure

Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector, and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field induced intervalley scattering resulting in a reduced carrier mobility thereby damping the plasmonic response. We demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast THz optics and for passive protection of sensitive electromagnetic devices.Comment: 20 pages total with 4 figure

Nonlinear terahertz metamaterials via field-enhanced carrier dynamics in GaAs

We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ~20 - 160 kV/cm drives intervalley scattering. This reduces the carrier mobility and enhances the SRR LC response due to a conductivity decrease in the doped thin film. Above ~160 kV/cm, electric field enhancement within the SRR gaps leads to efficient impact ionization, increasing the carrier density and the conductivity which, in turn, suppresses the SRR resonance. We demonstrate an increase of up to 10 orders of magnitude in the carrier density in the SRR gaps on semi-insulating GaAs substrate. Furthermore, we show that the effective permittivity can be swept from negative to positive values with increasing terahertz field strength in the impact ionization regime, enabling new possibilities for nonlinear metamaterials.Comment: 5 pages, 4 figure