Model Exploration Using OpenMOLE - a workflow engine for large scale distributed design of experiments and parameter tuning

OpenMOLE is a scientific workflow engine with a strong emphasis on workload distribution. Workflows are designed using a high level Domain Specific Language (DSL) built on top of Scala. It exposes natural parallelism constructs to easily delegate the workload resulting from a workflow to a wide range of distributed computing environments. In this work, we briefly expose the strong assets of OpenMOLE and demonstrate its efficiency at exploring the parameter set of an agent simulation model. We perform a multi-objective optimisation on this model using computationally expensive Genetic Algorithms (GA). OpenMOLE hides the complexity of designing such an experiment thanks to its DSL, and transparently distributes the optimisation process. The example shows how an initialisation of the GA with a population of 200,000 individuals can be evaluated in one hour on the European Grid Infrastructure.Comment: IEEE High Performance Computing and Simulation conference 2015, Jun 2015, Amsterdam, Netherland

Utilisation de EGI par la communauté des modélisateurs en systèmes complexes

International audienceUtilisation de EGI par la communauté des modélisateurs en systèmes complexe

Spectroscopic Signatures for the Dark Bose-Einstein Condensation of Spatially Indirect Excitons

We study semiconductor excitons confined in an electrostatic trap of a GaAs bilayer heterostructure. We evidence that optically bright excitonic states are strongly depleted while cooling to sub-Kelvin temperatures. In return, the other accessible and optically dark states become macroscopically occupied so that the overall exciton population in the trap is conserved. These combined behaviours constitute the spectroscopic signature for the mostly dark Bose-Einstein condensation of excitons, which in our experiments is restricted to a dilute regime within a narrow range of densities, below a critical temperature of about 1K.Comment: 7 pages and 5 figure

Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire

We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by the doping profile of the nanowire and by the voltages applied to the top gates and to the substrate. Local doping is achieved with the realisation of up to two arsenic implantation steps in combination with gates and nitride spacers acting as a mask. We compare nominally identical devices with different implantations and different voltages applied to the substrate, leading to the realisation of both intrinsic and doped coupled dot structures. We demonstrate devices in which all the tunnel resistances towards the electrodes and between the dots can be independently tuned with the control top gates wrapping the silicon nanowire.Comment: 7 pages, 6 figure

Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulations

We report an ab initio study of the semiconducting Mg2X (with X = Si, Ge) compounds and in particular we analyze the formation energy of the different point defects with the aim to understand the intrinsic doping mechanisms. We find that the formation energy of Mg2Ge is 50 % larger than the one of Mg2Si, in agreement with the experimental tendency. From the study of the stability and the electronic properties of the most stable defects taking into account the growth conditions, we show that the main reason for the n-doping in these materials comes from interstitial magnesium defects. Conversely, since other defects acting like acceptors such as Mg vacancies or multivacancies are more stable in Mg2Ge than in Mg2Si, this explains why Mg2Ge can be of n or p type, contrary to Mg2Si. The finding that the most stable defects are different in Mg2Si and Mg2Ge and depend on the growth conditions is important and must be taken into account in the search of the optimal doping to improve the thermoelectric properties of these materials.Comment: 25 pages, 6 Table