ab initio Electronic Transport Model with Explicit Solution to the Linearized Boltzmann Transport Equation

Accurate models of carrier transport are essential for describing the electronic properties of semiconductor materials. To the best of our knowledge, the current models following the framework of the Boltzmann transport equation (BTE) either rely heavily on experimental data (i.e., semi-empirical), or utilize simplifying assumptions, such as the constant relaxation time approximation (BTE-cRTA). While these models offer valuable physical insights and accurate calculations of transport properties in some cases, they often lack sufficient accuracy -- particularly in capturing the correct trends with temperature and carrier concentration. We present here a general transport model for calculating low-field electrical drift mobility and Seebeck coefficient of n-type semiconductors, by explicitly considering all relevant physical phenomena (i.e. elastic and inelastic scattering mechanisms). We first rewrite expressions for the rates of elastic scattering mechanisms, in terms of ab initio properties, such as the band structure, density of states, and polar optical phonon frequency. We then solve the linear BTE to obtain the perturbation to the electron distribution -- resulting from the dominant scattering mechanisms -- and use this to calculate the overall mobility and Seebeck coefficient. Using our model, we accurately calculate electrical transport properties of the compound n-type semiconductors, GaAs and InN, over various ranges of temperature and carrier concentration. Our fully predictive model provides high accuracy when compared to experimental measurements on both GaAs and InN, and vastly outperforms both semi-empirical models and the BTE-cRTA. Therefore, we assert that this approach represents a first step towards a fully ab initio carrier transport model that is valid in all compound semiconductors

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model

High fidelity quantum memory via dynamical decoupling: theory and experiment

Quantum information processing requires overcoming decoherence---the loss of "quantumness" due to the inevitable interaction between the quantum system and its environment. One approach towards a solution is quantum dynamical decoupling---a method employing strong and frequent pulses applied to the qubits. Here we report on the first experimental test of the concatenated dynamical decoupling (CDD) scheme, which invokes recursively constructed pulse sequences. Using nuclear magnetic resonance, we demonstrate a near order of magnitude improvement in the decay time of stored quantum states. In conjunction with recent results on high fidelity quantum gates using CDD, our results suggest that quantum dynamical decoupling should be used as a first layer of defense against decoherence in quantum information processing implementations, and can be a stand-alone solution in the right parameter regime.Comment: 6 pages, 3 figures. Published version. This paper was initially entitled "Quantum gates via concatenated dynamical decoupling: theory and experiment", by Jacob R. West, Daniel A. Lidar, Bryan H. Fong, Mark F. Gyure, Xinhua Peng, and Dieter Suter. That original version split into two papers: http://arxiv.org/abs/1012.3433 (theory only) and the current pape

Low field vortex matter in YBCO: an atomic beam magnetic resonance study

We report measurements of the low field structure of the magnetic vortex lattice in an untwinned YBCO single-crystal platelet. Measurements were carried out using a novel atomic beam magnetic resonance (ABMR) technique. For a 10.7 G field applied parallel to the c-axis of the sample, we find a triangular lattice with orientational order extending across the entire sample. We find the triangular lattice to be weakly distorted by the a-b anisotropy of the material and measure a distortion factor, f = 1.16. Model-experiment comparisons determine a penetration depth, lambda_ab = 140 (+-20) nm. The paper includes the first detailed description of the ABMR technique. We discuss both technical details of the experiment and the modeling used to interpret the measurements.Comment: 44 pages, 13 figures, submitted to Phys. Rev. B Revision includes Postscript wrapped figures + minor typo

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass.Comment: 5 pages, 4 figures, 1 tabl

Aperiodic dynamical decoupling sequences in presence of pulse errors

Dynamical decoupling (DD) is a promising tool for preserving the quantum states of qubits. However, small imperfections in the control pulses can seriously affect the fidelity of decoupling, and qualitatively change the evolution of the controlled system at long times. Using both analytical and numerical tools, we theoretically investigate the effect of the pulse errors accumulation for two aperiodic DD sequences, the Uhrig's DD UDD) protocol [G. S. Uhrig, Phys. Rev. Lett. {\bf 98}, 100504 (2007)], and the Quadratic DD (QDD) protocol [J. R. West, B. H. Fong and D. A. Lidar, Phys. Rev. Lett {\bf 104}, 130501 (2010)]. We consider the implementation of these sequences using the electron spins of phosphorus donors in silicon, where DD sequences are applied to suppress dephasing of the donor spins. The dependence of the decoupling fidelity on different initial states of the spins is the focus of our study. We investigate in detail the initial drop in the DD fidelity, and its long-term saturation. We also demonstrate that by applying the control pulses along different directions, the performance of QDD protocols can be noticeably improved, and explain the reason of such an improvement. Our results can be useful for future implementations of the aperiodic decoupling protocols, and for better understanding of the impact of errors on quantum control of spins.Comment: updated reference

Flux-Line Lattice Structures in Untwinned YBa2Cu3O

A small angle neutron scattering study of the flux-line lattice in a large single crystal of untwinned YBa2Cu3O is presented. In fields parallel to the c-axis, diffraction spots are observed corresponding to four orientations of a hexagonal lattice, distorted by the a-b anisotropy. A value for the anisotropy, the penetration depth ratio, of 1.18(2) was obtained. The high quality of the data is such that second order diffraction is observed, indicating a well ordered FLL. With the field at 33 degrees to c a field dependent re-orientation of the lattice is observed around 3T.Comment: 4 pages, 4 figure