Near-infrared photoluminescence of erbium tris(8-hydroxyquinoline) spin-coated thin films induced by low coherence light sources

Copyright 2007 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters [91, 021106 (2007)] and may be found at

Electronic and magnetic properties of the interface between metal-quinoline molecules and cobalt

It was recently established that spin injection from a ferromagnetic metal into an organic semiconductor depends largely on the formation of hybrid interface states. Here we investigate whether the magnetic properties of the interface between cobalt and tris( 8-hydroxyquinolinato)-Al( III) ( Alq3), the most prominent molecular candidate for organicspin-valve devices, can be modified by substituting the aluminum atom with either gallium or indium. The electronic structure of Alq3, Gaq3, and Inq3 and the properties of their interfaces with ferromagnetic cobalt are probed experimentally, by using different photoemission spectroscopy methods, and theoretically, through density functional theory calculations. For all cases, the results highlight the presence of spin-polarized interface states. However no striking difference between the properties of the various molecules and interfaces is observed. This is a consequence of the fact that the molecules frontier orbitals are mainly localized on the ligands and they show only a negligible contribution coming from the metal ion

Interdiffusion: A probe of vacancy diffusion in III-V materials

Copyright 1997 by the American Physical Society. Article is available at

Modeling of positive and negative organic magnetoresistance in organic light-emitting diodes

Copyright 2012 by the American Physical Society. Article is available at

The Fermi level effect in III-V intermixing: The final nail in the coffin?

Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 81, 2179 (1997) and may be found at

An optical study of interdiffusion in ZnSe/ZnCdSe

Copyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Applied Physics Letters 69, 1579 (1996) and may be found at

The activation energy for GaAs/AlGaAs interdiffusion

Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 82, 4842 (1997) and may be found at

Impurity effects on charge transport and magnetoconductance in a single layer poly(3-hexyl-thiophene) device

received: 2016-01-10 accepted: 2016-05-05 published: 2016-05-17The work was supported by the China Scholarship Council and Engineering (HG, SC, HL, TZ, JH), National Science Foundation of China, 61574095, and Physical Sciences Research Council Grant Nos. EP/J50029X/1, EP/K004484/1, and EP/L020114/1