Enhancing optical absorption in InP and GaAs utilizing profile etching

The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells were manufactured with both GaAs and InP, and the improved optical absorption was demonstrated. Preferred parameters for various applications are listed and discussed

Ecological Observations on Predatory Coccinellidae (Coleoptera) in Southwestern Michigan

Ecological observations on habitat utilization by thirteen species of predatory Coccinellidae were made at a southern Michigan site during 1989 and 1990. Most of species were common during both years and used both agricul- tural and uncultivated habitats. Coccinella septempunctata and Coleomegilla maculata, were the most abundant in agricultural crops (alfalfa, maize, soy- bean and triticale), whereas Adalia bipunctata and Cycloneda munda, were the most abundant in deciduous and bushy habitats

Modification of silicon carbide fibers for use in SiC/Ti composites

The degradation of silicon carbide fibers during exposure to conditions typical of composite fabrication was investigated. The tensile strength of pristine fibers and fibers sputtered with thin metal coatings were determined before and after treatment at 870 C for one hour in vacuum. Each fiber strength distribution was related by an analytical procedure to a projected composite ultimate tensile strength (PC UTS). The results indicate that a thin aluminum diffusion barrier can yield a 150 percent increase in PC UTS over the baseline SiC/Ti system

Texturing of InP surfaces for device applications

A unique process for texturing InP (100) wafers by anisotropic etching was developed. The process produces irregular V-grooves on the surface, which reduce the surface reflectivity. The process does not require photolithography or masking. The etching characteristics depend on doping, with etching tending to proceed more rapidly on the more heavily doped samples. Reduced reflectivity surfaces formed using this process can be applied to solar cells, photodetectors, and other optoelectronic devices

Peeled film GaAs solar cells for space power

Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg

Space station common module network topology and hardware development

Conceptual space station common module power management and distribution (SSM/PMAD) network layouts and detailed network evaluations were developed. Individual pieces of hardware to be developed for the SSM/PMAD test bed were identified. A technology assessment was developed to identify pieces of equipment requiring development effort. Equipment lists were developed from the previously selected network schematics. Additionally, functional requirements for the network equipment as well as other requirements which affected the suitability of specific items for use on the Space Station Program were identified. Assembly requirements were derived based on the SSM/PMAD developed requirements and on the selected SSM/PMAD network concepts. Basic requirements and simplified design block diagrams are included. DC remote power controllers were successfully integrated into the DC Marshall Space Flight Center breadboard. Two DC remote power controller (RPC) boards experienced mechanical failure of UES 706 stud-mounted diodes during mechanical installation of the boards into the system. These broken diodes caused input to output shorting of the RPC's. The UES 706 diodes were replaced on these RPC's which eliminated the problem. The DC RPC's as existing in the present breadboard configuration do not provide ground fault protection because the RPC was designed to only switch the hot side current. If ground fault protection were to be implemented, it would be necessary to design the system so the RPC switched both the hot and the return sides of power

A V-grooved GaAs solar cell

V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing and MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reluctance of the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control

Enhanced exchange bias effects in a nanopatterned system consisting of two perpendicularly coupled ferromagnets

This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The effect of patterning on the shift of the hysteresis loop HE and coercivityHC in a system composed of two perpendicularly exchange-coupled ferromagnets (NiFe sputtered onto a [Pt/Co] multilayer) is investigated in long stripes and square dots. Setting the exchange bias coupling along the stripes results in a threefold increase of HE compared to the continuous films. HC increases dramatically when the coupling is set perpendicular to the stripes and also in the dots. Magnetic force microscopy studies and micromagnetic simulations suggest that differences in the number and orientation of the magnetic domains can account for the observed effects