946 research outputs found

    Strong Pinning Enhancement in MgB2 Using Very Small Dy2O3 Additions

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    0.5 to 5.0 wt.% Dy2O3 was in-situ reacted with Mg + B to form pinned MgB2. While Tc remained largely unchanged, Jc was strongly enhanced. The best sample (only 0.5 wt.% Dy2O3) had a Jc of 6.5 x 10^5 A/cm^2 at 6K, 1T and 3.5 x 10^5 A/cm^2 at 20K, 1T, around a factor of 4 higher compared to the pure sample, and equivalent to hot-pressed or nano-Si added MgB2 at below 1T. Even distributions of nano-scale precipitates of DyB4 and MgO were observed within the grains. The room temperature resistivity decreased with Dy2O3 indicative of improved grain connectivity.Comment: 13 pages, 4 figures and 1 tabl

    Raising Bi-O bands above the Fermi energy level of hole-doped Bi2_2Sr2_2CaCu2_2O8+δ_{8+\delta} and other cuprate superconductors

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    The Fermi surface (FS) of Bi2_2Sr2_2CaCu2_2O8+δ_{8+\delta} (Bi2212) predicted by band theory displays Bi-related pockets around the (π,0)(\pi,0) point, which have never been observed experimentally. We show that when the effects of hole doping either by substituting Pb for Bi or by adding excess O in Bi2212 are included, the Bi-O bands are lifted above the Fermi energy (EFE_F) and the resulting first-principles FS is in remarkable accord with measurements. With decreasing hole-doping the Bi-O bands drop below EFE_F and the system self-dopes below a critical hole concentration. Computations on other Bi- as well as Tl- and Hg-based compounds indicate that lifting of the cation-derived band with hole doping is a general property of the electronic structures of the cuprates.Comment: 4 pages, 4 figures; PRL (2006, in press

    Thin-Film Trilayer Manganate Junctions

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    Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La0.67_{0.67}Sr0.33_{0.33}MnO3_3% -SrTiO3_3-La0.67_{0.67} Sr0.33_{0.33}MnO3_3 trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.Comment: 20 pages, 14 figures. To appear in Phil. Trans. R. Soc. Lond. A vol.356 (1998

    Normal state properties of high angle grain boundaries in (Y,Ca)Ba2Cu3O7-delta

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    By lithographically fabricating an optimised Wheatstone bridge geometry, we have been able to make accurate measurements of the resistance of grain boundaries in Y1-xCaxBa2Cu3O7-d between the superconducting transition temperature, Tc, and room temperature. Below Tc the normal state properties were assessed by applying sufficiently high currents. The behaviour of the grain boundary resistance versus temperature and of the conductance versus voltage are discussed in the framework charge transport through a tunnel barrier. The influence of misorientation angle, oxygen content, and calcium doping on the normal state properties is related to changes of the height and shape of the grain boundary potential barrier.Comment: 17 pages, 1 table, 5 figures, submitted to PR

    Angular dependent vortex pinning mechanisms in YBCO coated conductors and thin films

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    We present a comparative study of the angular dependent critical current density in YBa2Cu3O7 films deposited on IBAD MgO and on single crystal MgO and SrTiO3 substrates. We identify three angular regimes where pinning is dominated by different types of correlated and uncorrelated defects. We show that those regimes are present in all cases, indicating that the pinning mechanisms are the same, but their extension and characteristics are sample dependent, reflecting the quantitative differences in texture and defect density. In particular, the more defective nature of the films on IBAD turns into an advantage as it results in stronger vortex pinning, demonstrating that the critical current density of the films on single crystals is not an upper limit for the performance of the IBAD coated conductors.Comment: 14 pages, 3 figures. Submitted to AP

    Depairing critical current achieved in superconducting thin films with through-thickness arrays of artificial pinning centers

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    Large area arrays of through-thickness nanoscale pores have been milled into superconducting Nb thin films via a process utilizing anodized aluminum oxide thin film templates. These pores act as artificial flux pinning centers, increasing the superconducting critical current, Jc, of the Nb films. By optimizing the process conditions including anodization time, pore size and milling time, Jc values approaching and in some cases matching the Ginzburg-Landau depairing current of 30 MA/cm^2 at 5 K have been achieved - a Jc enhancement over as-deposited films of more than 50 times. In the field dependence of Jc, a matching field corresponding to the areal pore density has also been clearly observed. The effect of back-filling the pores with magnetic material has then been investigated. While back-filling with Co has been successfully achieved, the effect of the magnetic material on Jc has been found to be largely detrimental compared to voids, although a distinct influence of the magnetic material in producing a hysteretic Jc versus applied field behavior has been observed. This behavior has been tested for compatibility with currently proposed models of magnetic pinning and found to be most closely explained by a model describing the magnetic attraction between the flux vortices and the magnetic inclusions.Comment: 9 pages, 10 figure
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