Non-Equilibrium Dynamics and Superfluid Ring Excitations in Binary Bose-Einstein Condensates

We revisit a classic study [D. S. Hall {\it et al.}, Phys. Rev. Lett. {\bf 81}, 1539 (1998)] of interpenetrating Bose-Einstein condensates in the hyperfine states $\ket{F = 1, m_f = -1}\equiv\ket{1}$ and $\ket{F = 2, m_f = +1}\equiv\ket{2}$ of ${}^{87}$Rb and observe striking new non-equilibrium component separation dynamics in the form of oscillating ring-like structures. The process of component separation is not significantly damped, a finding that also contrasts sharply with earlier experimental work, allowing a clean first look at a collective excitation of a binary superfluid. We further demonstrate extraordinary quantitative agreement between theoretical and experimental results using a multi-component mean-field model with key additional features: the inclusion of atomic losses and the careful characterization of trap potentials (at the level of a fraction of a percent).Comment: 4 pages, 3 figures (low res.), to appear in PR

Hall Coefficient of a Dilute 2D Electron System in Parallel Magnetic Field

Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field above which the longitudinal resistance saturates and the electrons have reached full spin-polarization. This implies that the mobilities of the spin-up and spin-down electrons remain comparable at all magnetic fields, and suggests there is strong mixing of spin-up and spin-down electron states.Comment: 4 pages, 2 figure

In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems

Using a novel technique, we make quantitative measurements of the spin polarization of dilute (3.4 to 6.8*10^{10} cm^{-2}) GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating \textit{before} it is fully spin polarized. The minority-spin population at the transition is ~8*10^{9} cm^{-2}, close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field.Comment: 4 pages with figure

Parallel magnetic field induced giant magnetoresistance in low density {\it quasi}-two dimensional layers

We provide a possible theoretical explanation for the recently observed giant positive magnetoresistance in high mobility low density {\it quasi}-two dimensional electron and hole systems. Our explanation is based on the strong coupling of the parallel field to the {\it orbital} motion arising from the {\it finite} layer thickness and the large Fermi wavelength of the {\it quasi}-two dimensional system at low carrier densities.Comment: 4 pages with 4 figures. Accepted for Publication in Physical Review Letter

Compared effects of inhibition and exogenous administration of hydrogen sulphide in ischaemia-reperfusion injury

INTRODUCTION: Haemorrhagic shock is associated with an inflammatory response consecutive to ischaemia-reperfusion (I/R) that leads to cardiovascular failure and organ injury. The role of and the timing of administration of hydrogen sulphide (H2S) remain uncertain. Vascular effects of H2S are mainly mediated through K+ATP-channel activation. Herein, we compared the effects of D,L-propargylglycine (PAG), an inhibitor of H2S production, as well as sodium hydrosulphide (NaHS), an H2S donor, on haemodynamics, vascular reactivity and cellular pathways in a rat model of I/R. We also compared the haemodynamic effects of NaHS administered before and 10 minutes after reperfusion. METHODS: Mechanically ventilated and instrumented rats were bled during 60 minutes in order to maintain mean arterial pressure at 40 +/- 2 mmHg. Ten minutes prior to retransfusion, rats randomly received either an intravenous bolus of NaHS (0.2 mg/kg) or vehicle (0.9% NaCl) or PAG (50 mg/kg). PNU, a pore-forming receptor inhibitor of K+ATP channels, was used to assess the role of K+ATP channels. RESULTS: Shock and I/R induced a decrease in mean arterial pressure, lactic acidosis and ex vivo vascular hyporeactivity, which were attenuated by NaHS administered before reperfusion and PNU but not by PAG and NaHS administered 10 minutes after reperfusion. NaHS also prevented aortic inducible nitric oxide synthase expression and nitric oxide production while increasing Akt and endothelial nitric oxide synthase phosphorylation. NaHS reduced JNK activity and p-P38/P38 activation, suggesting a decrease in endothelial cell activation without variation in ERK phosphorylation. PNU + NaHS increased mean arterial pressure when compared with NaHS or PNU alone, suggesting a dual effect of NaHS on vascular reactivity. CONCLUSION: NaHS when given before reperfusion protects against the effects of haemorrhage-induced I/R by acting primarily through a decrease in both proinflammatory cytokines and inducible nitric oxide synthase expression and an upregulation of the Akt/endothelial nitric oxide synthase pathway

Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density

Classical versus Quantum Effects in the B=0 Conducting Phase in Two Dimensions

In the dilute two-dimensional electron system in silicon, we show that the temperature below which Shubnikov-de Haas oscillations become apparent is approximately the same as the temperature below which an exponential decrease in resistance is seen in B=0, suggesting that the anomalous behavior in zero field is observed only when the system is in a degenerate (quantum) state. The temperature dependence of the resistance is found to be qualitatively similar in B=0 and at integer Landau level filling factors.Comment: 3 pages, 3 figure

Metallic behavior and related phenomena in two dimensions

For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field. In the last several years, however, unusual behavior suggestive of such a transition has been reported in a variety of dilute two-dimensional electron and hole systems. The physics behind these observations is presently not understood. We review and discuss the main experimental findings and suggested theoretical models.Comment: To be published in Rev. Mod. Phy

Single and Paired Point Defects in a 2D Wigner Crystal

Using the path-integral Monte Carlo method, we calculate the energy to form single and pair vacancies and interstitials in a two-dimensional Wigner crystal of electrons. We confirm that the lowest-lying energy defects of a 2D electron Wigner crystal are interstitials, with a creation energy roughly 2/3 that of a vacancy. The formation energy of the defects goes to zero near melting, suggesting that point defects might mediate the melting process. In addition, we find that the interaction between defects is strongly attractive, so that most defects will exist as bound pairs.Comment: 4 pages, 5 encapsulated figure

Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.Comment: 4 pages, 3 figure