Characteristics of ferroelectric-ferroelastic domains in N{\'e}el-type skyrmion host GaV4_4S8_8

GaV$_4$S$_8$ is a multiferroic semiconductor hosting N{\'e}el-type magnetic skyrmions dressed with electric polarization. At T$_s$ = 42K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below T$_s$, ferroelectric domains are formed with the electric polarization pointing along any of the four $\left< 111 \right>$ axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the N{\'e}el-type skyrmion lattice emerging below T$_C$=13\:K, the characteristics of polar domains in GaV$_4$S$_8$ have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV$_4$S$_8$ using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm-1.2 $\mu$m. We expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manupulation of N{\'e}el-type skyrmions

Scaling of the conductance distribution near the Anderson transition

The single parameter scaling hypothesis is the foundation of our understanding of the Anderson transition. However, the conductance of a disordered system is a fluctuating quantity which does not obey a one parameter scaling law. It is essential to investigate the scaling of the full conductance distribution to establish the scaling hypothesis. We present a clear cut numerical demonstration that the conductance distribution indeed obeys one parameter scaling near the Anderson transition

Néel-type skyrmion lattice with confined orientation in the polar magnetic semiconductor GaV4S8

Following the early prediction of the skyrmion lattice (SkL)—a periodic array of spin vortices—it has been observed recently in various magnetic crystals mostly with chiral structure. Although non-chiral but polar crystals with Cnv symmetry were identified as ideal SkL hosts in pioneering theoretical studies, this archetype of SkL has remained experimentally unexplored. Here, we report the discovery of a SkL in the polar magnetic semiconductor GaV4S8 with rhombohedral (C3v) symmetry and easy axis anisotropy. The SkL exists over an unusually broad temperature range compared with other bulk crystals and the orientation of the vortices is not controlled by the external magnetic field, but instead confined to the magnetic easy axis. Supporting theory attributes these unique features to a new Néel-type of SkL describable as a superposition of spin cycloids in contrast to the Bloch-type SkL in chiral magnets described in terms of spin helices

Metal-insulator transitions in anisotropic 2d systems

Several phenomena related to the critical behaviour of non-interacting electrons in a disordered 2d tight-binding system with a magnetic field are studied. Localization lengths, critical exponents and density of states are computed using transfer matrix techniques. Scaling functions of isotropic systems are recovered once the dimension of the system in each direction is chosen proportional to the localization length. It is also found that the critical point is independent of the propagation direction, and that the critical exponents for the localization length for both propagating directions are equal to that of the isotropic system (approximately 7/3). We also calculate the critical value of the scaling function for both the isotropic and the anisotropic system. It is found that the isotropic value equals the geometric mean of the two anisotropic values. Detailed numerical studies of the density of states for the isotropic system reveals that for an appreciable amount of disorder the critical energy is off the band center.Comment: 6 pages RevTeX, 6 figures included, submitted to Physical Review

Behavior of the thermopower in amorphous materials at the metal-insulator transition

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Finite-size scaling from self-consistent theory of localization

Accepting validity of self-consistent theory of localization by Vollhardt and Woelfle, we derive the finite-size scaling procedure used for studies of the critical behavior in d-dimensional case and based on the use of auxiliary quasi-1D systems. The obtained scaling functions for d=2 and d=3 are in good agreement with numerical results: it signifies the absence of essential contradictions with the Vollhardt and Woelfle theory on the level of raw data. The results \nu=1.3-1.6, usually obtained at d=3 for the critical exponent of the correlation length, are explained by the fact that dependence L+L_0 with L_0>0 (L is the transversal size of the system) is interpreted as L^{1/\nu} with \nu>1. For dimensions d\ge 4, the modified scaling relations are derived; it demonstrates incorrectness of the conventional treatment of data for d=4 and d=5, but establishes the constructive procedure for such a treatment. Consequences for other variants of finite-size scaling are discussed.Comment: Latex, 23 pages, figures included; additional Fig.8 is added with high precision data by Kramer et a