Shot noise of coupled semiconductor quantum dots

The low-frequency shot noise properties of two electrostatically coupled semiconductor quantum dot states which are connected to emitter/collector contacts are studied. A master equation approach is used to analyze the bias voltage dependence of the Fano factor as a measure of temporal correlations in tunneling current caused by Pauli's exclusion principle and the Coulomb interaction. In particular, the influence of the Coulomb interaction on the shot noise behavior is discussed in detail and predictions for future experiments will be given. Furthermore, we propose a mechanism for negative differential conductance and investigate the related super-Poissonian shot noise.Comment: submitted to PR

Magnetic-field-induced singularities in spin dependent tunneling through InAs quantum dots

Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a GaAs-AlAs-GaAs tunneling device are investigated experimentally in magnetic fields up to 28 T. The steps evolve into strongly enhanced current peaks in high fields. This can be understood as a field-induced Fermi-edge singularity due to the Coulomb interaction between the tunneling electron on the quantum dot and the partly spin polarized Fermi sea in the Landau quantized three-dimensional emitter.Comment: 5 pages, 4 figure