Practical solutions for sampling alternatives in large-scale models

Many large-scale real-world transport applications have choice sets that are so large as to make model estimation and application computationally impractical. The ability to estimate models on subsets of the alternatives is thus of great appeal, and correction approaches have existed since the late 1970s for the simple multinomial logit (MNL) model. However, many of these models in practice rely on nested logit specifications, for example, in the context of the joint choice of mode and destination. Recent research has put forward solutions for such generalized extreme value (GEV) structures, but these structures remain difficult to apply in practice. This paper puts forward a simplification of the GEV method for use in computationally efficient implementations of nested logit. The good performance of this approach is illustrated with simulated data, and additional insights into sampling error are also provided with different sampling strategies for MNL

Synthesis and preclinical evaluation of [¹¹C]uPSEM792 for PSAM⁴-GlyR based chemogenetics

\ua9 2024, This is a U.S. Government work and not under copyright protection in the US; foreign copyright protection may apply. Chemogenetic tools are designed to control neuronal signaling. These tools have the potential to contribute to the understanding of neuropsychiatric disorders and to the development of new treatments. One such chemogenetic technology comprises modified Pharmacologically Selective Actuator Modules (PSAMs) paired with Pharmacologically Selective Effector Molecules (PSEMs). PSAMs are receptors with ligand-binding domains that have been modified to interact only with a specific small-molecule agonist, designated a PSEM. PSAM4 is a triple mutant PSAM derived from the α7 nicotinic receptor (α7L131G,Q139L,Y217F). Although having no constitutive activity as a ligand-gated ion channel, PSAM4 has been coupled to the serotonin 5-HT3 receptor (5-HT3R) and to the glycine receptor (GlyR). Treatment with the partner PSEM to activate PSAM4-5-HT3 or PSAM4-GlyR, causes neuronal activation or silencing, respectively. A suitably designed radioligand may enable selective visualization of the expression and location of PSAMs with positron emission tomography (PET). Here, we evaluated uPSEM792, an ultrapotent PSEM for PSAM4-GlyR, as a possible lead for PET radioligand development. We labeled uPSEM792 with the positron-emitter, carbon-11 (t 1/2 = 20.4 min), in high radiochemical yield by treating a protected precursor with [11C]iodomethane followed by base deprotection. PET experiments with [11C]uPSEM792 in rodents and in a monkey transduced with PSAM4-GlyR showed low peak radioactivity uptake in brain. This low uptake was probably due to high polarity of the radioligand, as evidenced by physicochemical measurements, and to the vulnerability of the radioligand to efflux transport at the blood–brain barrier. These findings can inform the design of a more effective PSAM4 based PET radioligand, based on the uPSEM792 chemotype

Effect of Polypropylene fibres on the Workability parameters of Extrudable Cementitious Material

Additive manufacturing in construction industry has been introduced as an aspiration for a more sustainable built environment and currently evolving with high demand amongst researches. This study is an investigation of the influence of polypropylene (PP) fibre addition on the workability parameters of a new extrudable concrete mixture. As the quality of final printed structure prominently depends on the fresh state properties of concrete, this investigation mainly focused on the rheological properties such as workability (flow), setting time, extrudability and buildability. These parameters were systematically investigated through a small scale experimental process with time after mixing. The selected control mix with Ground granulated blast furnace slag (GGBS) and Silica Fume (SF) was used in this analysis. The Control cementitious specimens without fibre inclusion and with fibre addition in different volume fraction of binder, ranging from 0.5% to 3% were printed. The results showed that the fibre addition of 0, 0.5 and 1.0% have the better flowability and extrudability compared to 1.5, 2 and 3%. Also, reduction in the print quality was assessed visually with increasing fibre percentage. However, results indicated that the initial setting time is comparatively low for those mixes with higher fibre inclusion which is required for better bond strength between layers. Moreover, higher fibre content caused better buildability and shape retention in the extruded samples

Si Based Mis Devices with Ferroelectric Polymer Films for Non-Volatile Memory Applications

Ferroelectric non-volatile memories have gained momentous importance in the recent years. Significant research is being done on different device structures with several ferroelectric films for better data retention, lower power dissipation and higher density of integration. Metal - ferroelectric insulator – semiconductor (MIS) capacitor structures with Poly Vinylidene Fluoride(80%) - trifluoroethylene (20%) (PVDF – TrFE) copolymer are observed to demonstrate consistent dielectric properties and retainable memory action under selected operating conditions. Prior research was done on devices with MFeOS structure with an oxide buffer layer. The presence of a buffer oxide reduces the field acting on the film for memory state switching, which in effect requires the devices to be operated at higher voltages. In this work, MFeS devices with lower ferroelectric film thickness; with, and without a very thin buffer oxide have been studied. The dielectric behavior of PVDF thin film, when deposited directly on Si, is observed to exhibit reliable memory properties without significant charge injection under certain operating conditions. Electrical characteristics such as capacitance-voltage(C-V) and polarization-electric field (P-E) hysteresis with the direction of measurement and conduction properties through the junction have been comprehensively studied to establish the behavior of the MIS device for possible use in MIS FETs for high density ferroelectric memories

Si Based Mis Devices with Ferroelectric Polymer Films for Non-Volatile Memory Applications

Ferroelectric non-volatile memories have gained momentous importance in the recent years. Significant research is being done on different device structures with several ferroelectric films for better data retention, lower power dissipation and higher density of integration. Metal - ferroelectric insulator – semiconductor (MIS) capacitor structures with Poly Vinylidene Fluoride(80%) - trifluoroethylene (20%) (PVDF – TrFE) copolymer are observed to demonstrate consistent dielectric properties and retainable memory action under selected operating conditions. Prior research was done on devices with MFeOS structure with an oxide buffer layer. The presence of a buffer oxide reduces the field acting on the film for memory state switching, which in effect requires the devices to be operated at higher voltages. In this work, MFeS devices with lower ferroelectric film thickness; with, and without a very thin buffer oxide have been studied. The dielectric behavior of PVDF thin film, when deposited directly on Si, is observed to exhibit reliable memory properties without significant charge injection under certain operating conditions. Electrical characteristics such as capacitance-voltage(C-V) and polarization-electric field (P-E) hysteresis with the direction of measurement and conduction properties through the junction have been comprehensively studied to establish the behavior of the MIS device for possible use in MIS FETs for high density ferroelectric memories.Master of Science in Electrical and Computer Engineering (M.S.E.C.E.