Processing Issues in Top-Down Approaches to Quantum Computer Development in Silicon

We describe critical processing issues in our development of single atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates and single electron transistor (SET) readout structures is addressed in a silicon-based approach. Results on electrical activation of low energy (15 keV) P implants in silicon show a strong dose effect on the electrical activation fractions. We identify dopant segregation to the SiO2/Si interface during rapid thermal annealing as a dopant loss channel and discuss measures of minimizing it. Silicon nanowire SET pairs with nanowire width of 10 to 20 nm are formed by electron beam lithography in SOI. We present first results from Coulomb blockade experiments and discuss issues of control gate integration for sub-40nm gate pitch levels

Early identification of wound infection: understanding wound odour

Malodorous wounds can be distressing for patients and their families, negatively impacting on quality-of-life outcomes. For health professionals malodorous wounds can also cause distress manifesting in feelings of disgust when faced with a wound emitting an unpleasant or repulsive odour. There has been investigation into the management of controlling odour particularly in relation to fungating wounds. However, there is limited research that explores techniques for early identification and recognition of wound odours that may be indicative of infection. Electronic nose technology has received some attention, but to date has not been integrated into either diagnostics of infection in wounds or education of health professionals to prepare them for the realities of clinical practice

Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon

We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins

Detection of low energy single ion impacts in micron scale transistors at room temperature

We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device doping and electrical characterization for development of single atom devices and studies of dopant fluctuation effects

Active deformation and shallow structure of the Wagner, Consag, and Delfín Basins, northern Gulf of California, Mexico

Oblique rifting began synchronously along the length of the Gulf of California at 6 Ma, yet there is no evidence for the existence of oceanic crust or a spreading transform fault system in the northern Gulf. Instead, multichannel seismic data show a broad shallow depression, ∼70 × 200 km, marked by active distributed deformation and six ∼10-km-wide segmented basins lacking well-defined transform faults. We present detailed images of faulting and magmatism based on the high resolution and quality of these data. The northern Gulf crust contains a dense (up to 18 faults in 5 km) complex network of mainly oblique-normal faults, with small offsets, dips of 60–80° and strikes of N-N30°E. Faults with seafloor offsets of tens of meters bound the Lower and two Upper Delfín Basins. These subparallel basins developed along splays from a transtensional zone at the NW end of the Ballenas Transform Fault. Twelve volcanic knolls were identified and are associated with the strands or horsetails from this zone. A structural connection between the two Upper Delfín Basins is evident in the switching of the center of extension along axis. Sonobuoy refraction data suggest that the basement consists of mixed igneous sedimentary material, atypical of mid-ocean ridges. On the basis of the near-surface manifestations of active faulting and magmatism, seafloor spreading will likely first occur in the Lower Delfín Basin. We suggest the transition to seafloor spreading is delayed by the lack of strain-partitioned and focused deformation as a consequence of shear in a broad zone beneath a thick sediment cover

Cellular automata approach to three-phase traffic theory

The cellular automata (CA) approach to traffic modeling is extended to allow for spatially homogeneous steady state solutions that cover a two dimensional region in the flow-density plane. Hence these models fulfill a basic postulate of a three-phase traffic theory proposed by Kerner. This is achieved by a synchronization distance, within which a vehicle always tries to adjust its speed to the one of the vehicle in front. In the CA models presented, the modelling of the free and safe speeds, the slow-to-start rules as well as some contributions to noise are based on the ideas of the Nagel-Schreckenberg type modelling. It is shown that the proposed CA models can be very transparent and still reproduce the two main types of congested patterns (the general pattern and the synchronized flow pattern) as well as their dependence on the flows near an on-ramp, in qualitative agreement with the recently developed continuum version of the three-phase traffic theory [B. S. Kerner and S. L. Klenov. 2002. J. Phys. A: Math. Gen. 35, L31]. These features are qualitatively different than in previously considered CA traffic models. The probability of the breakdown phenomenon (i.e., of the phase transition from free flow to synchronized flow) as function of the flow rate to the on-ramp and of the flow rate on the road upstream of the on-ramp is investigated. The capacity drops at the on-ramp which occur due to the formation of different congested patterns are calculated.Comment: 55 pages, 24 figure