Effect of Local Magnetic Moments on the Metallic Behavior in Two Dimensions

The temperature dependence of conductivity $\sigma (T)$ in the metallic phase of a two-dimensional electron system in silicon has been studied for different concentrations of local magnetic moments. The local moments have been induced by disorder, and their number was varied using substrate bias. The data suggest that in the limit of $T\to 0$ the metallic behavior, as characterized by $d\sigma/dT < 0$, is suppressed by an arbitrarily small amount of scattering by local magnetic moments.Comment: 4 pages, revtex, plus four encapsulated postscript figure

Airy-function electron localization in the oxide superlattices

Oxide superlattices and microstructures hold the promise for creating a new class of devices with unprecedented functionalities. Density-functional studies of the recently fabricated superlattices of lattice-matched perovskite titanates (SrTiO3)n/(LaTiO3)m reveal a classic wedge-shaped potential originating from the Coulomb potential of a charged sheet of La atoms. The potential in turn confines the electrons in the vicinity of the sheet, leading to an Airy-function localization of the electron states. Magnetism is suppressed for structures with a single LaTiO3 monolayer, while the bulk antiferromagnetism is recovered in the structures with a thicker LaTiO3, with a narrow transition region separating the magnetic LaTiO3 and the non-magnetic SrTiO3

Metal-insulator transition and glassy behavior in two-dimensional electron systems

Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility (low-disorder) samples. The glass transition is manifested by a sudden and dramatic slowing down of the electron dynamics, and by a very abrupt change to the sort of statistics characteristic of complicated multistate systems. In particular, the behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.Comment: Contribution to conference on "Noise as a tool for studying materials" (SPIE), Santa Fe, New Mexico, June 2003; 15 pages, 12 figs. (includes some low-quality figs; send e-mail to get high-quality figs.

Electronic structure of the substitutional versus interstitial manganese in GaN

Density-functional studies of the electron states in the dilute magnetic semiconductor GaN:Mn reveal major differences for the case of the Mn impurity at the substitutional site Mn_Ga versus the interstitial site Mn_I. The splitting of the two-fold and the three-fold degenerate Mn(d)states in the gap are reversed between the two cases, which is understood in terms of the symmetry-controlled hybridization with the neighboring atoms. In contrast to Mn_Ga, which acts as a deep acceptor, Mn_I acts as a donor, suggesting the formation of Coulomb-stabilized complexes such as (Mn_Ga Mn_I Mn_Ga), where the acceptor level of Mn_Ga is passivated by the Mn_I donor. Formation of such passivated clusters might be the reason for the observed low carrier-doping efficiency of Mn in GaN. Even though the Mn states are located well inside the gap,the wave functions are spread far away from the impurity center. This is caused by the hybridization with the nitrogen atoms, which acquire small magnetic moments aligned with the Mn moment. Implications of the differences in the electronic structure for the optical properties are discussed