Interferometer measurements of terahertz waves from Bi2Sr2CaCu2O8+d mesas

We fabricated rectangular mesa structures of superconducting Bi2Sr2CaCu2O8+d (Bi2212) using e-beam lithography and Ar ion beam etching techniques for terahertz (THz) emission. c-axis resistance versus temperature (R–T), current–voltage (I–V) characteristics and bolometric THz power measurements were performed to characterize Bi2212 mesas. The emission frequency of mesas was determined using a Michelson interferometer setup which also demonstrates polarized emission. Interference patterns of THz radiation from Bi2212 mesas were detected by various detectors such as a liquid helium cooled silicon composite bolometer, a Golay cell and a pyroelectric detector. An emitted power as high as 0.06 mW was detected from Bi2212 mesas. For the first time, most of the pumped power was extracted as THz emission from a Bi2212 mesa. The radiation at 0.54 THz was detected using the Michelson interferometric setup

Ultra-narrow linewidth CW sub-THz generation using GS based OFCG and n-i-pn-i-p superlattice photomixers

A report is presented on the photonic synthesis of ultra-narrow line-width continuous-wave (CW) sub-THz signals using a gain-switching (GS) based optical frequency comb generator (OFCG), selective optical filtering and a n-i-pn-i-p superlattice photomixer. This setup provides continuous tunability with a tuning resolution in the range of 0.1 Hz at 120 GHz and full width at half maximum of the generated signals below the limits of the measurement setup (< 10 Hz). The advantages of this system make it a very good candidate for applications requiring extremely low phase noise and continuous tunability, such as high resolution spectroscopy in the sub-THz and THz range.Work supported by the Spanish Ministry of Science and Technology through the project TEC2009-14525-C02-02. The work by A.R. Criado has been supported by the Spanish Ministry of Science and Technology under the FPI Program, Grant# BES2010-030290.Publicad

Terahertz response of patterned epitaxial graphene

We study the interaction between polarized terahertz (THz) radiation and micro-structured large-area graphene in transmission geometry. In order to efficiently couple the radiation into the two-dimensional material, a lateral periodic patterning of a closed graphene sheet by intercalation doping into stripes is chosen. We observe unequal transmittance of the radiation polarized parallel and perpendicular to the stripes. The relative contrast, partly enhanced by Fabry-Perot oscillations reaches 20 %. The effect even increases up to 50 % when removing graphene stripes in analogy to a wire grid polarizer. The polarization dependence is analyzed in a large frequency range from < 80 GHz to 3 THz, including the plasmon-polariton resonance. The results are in excellent agreement with theoretical calculations based on the electronic energy spectrum of graphene and the electrodynamics of the patterned structureThe authors thank J. Jobst for fruitful discussions. The research was performed in the framework of the Sonderforschungsbereich 953 "Synthetic carbon allotropes", funded by Deutsche Forschungsgemeinschaft. We acknowledge support from the EC under Graphene Flagship (contract no. CNECT-ICT-604391)

Solar cell process development in the european integrated project crystalclear

CrystalClear is a large integrated project funded by the European Commission that aims to drastically reduce the cost of crystalline Si PV modules, down to 1 Euro/Wp. Among the different subprojects, the one dealing with the development of advanced solar cells is relatively large (with 11 partners out of the 15 Crystal Clear partners taking part) and has a crucial role. The goal of the subproject is to develop cell design concepts and manufacturing processes that would enable a reduction in the order of 40% of the cell processing costs per Wp. In this paper, we give an overview of all the development work that has taken place in the CrystalClear solar cells subproject so far. World class results have been achieved, particularly on high efficiency cells on Si ribbons, and on industrial-type solar cells on very thin (120 (j.m thick) substrates

Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors

Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device – a process usually referred to as photomixing. The created terahertz frequency components, which are in the physical form of oscillating carrier concentrations, can feed a terahertz antenna and get radiated in case of a terahertz emitter, or mix with an incoming terahertz wave to down-convert to DC or to a low frequency photocurrent in case of a terahertz detector. Realizing terahertz photoconductors typically relies on short-carrier-lifetime semiconductors as the photo-absorbing material, where photocarriers are quickly trapped within one picosecond or less after generation, leading to ultrafast carrier dynamics that facilitates high-frequency device operation. However, while enabling broadband operation, a sub-picosecond lifetime of the photocarriers results in a substantial loss of photoconductive gain and optical responsivity. In addition, growth of short-carrier-lifetime semiconductors in many cases relies on the use of rare elements and non-standard processes with limited accessibility. Therefore, there is a strong motivation to explore and develop alternative techniques for realizing terahertz photomixers that do not rely on these defect-introduced short-carrier-lifetime semiconductors. This review will provide an overview of several promising approaches to realize terahertz emitters and detectors without short-carrier-lifetime semiconductors. These novel approaches utilize p-i-n diode junctions, plasmonic nanostructures, ultrafast spintronics, and low-dimensional materials to offer ultrafast carrier response. These innovative directions have great potentials for extending the applicability and accessibility of the terahertz spectrum for a wide range of applications

Fully Integrated THz Schottky Detectors Using Metallic Nanowires as Bridge Contacts

This paper investigates fully integrated Terahertz (THz) Schottky detectors using silver (Ag) metallic nanowires (NWs) with 120 nm diameter as bridge contacts for zero-bias operating THz detectors based on highly doped Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) layers. The combination of InGaAs and metallic NWs shows improved performance at zero-bias than a GaAs based detector with a simulated capacitance of 0.5 fF and a series resistance of 29.7 Ω . Thus, the calculated maximum cut-off frequency of 2.6 THz was obtained for a NW contacted vertical InGaAs THz detector. Initial THz measurements were carried out using a common THz setup for frequencies up to 1.2 THz. A responsivity of 0.81 A/W and a low noise-equivalent power (NEP) value of 7 pW/√Hz at 1 THz were estimated using the measured IV-characteristics of the zero-bias NW-InGaAs based THz Schottky detector