Production and optical properties of liquid scintillator for the JSNS2^{2} experiment

The JSNS$^{2}$ (J-PARC Sterile Neutrino Search at J-PARC Spallation Neutron Source) experiment will search for neutrino oscillations over a 24 m short baseline at J-PARC. The JSNS$^{2}$ inner detector will be filled with 17 tons of gadolinium-loaded liquid scintillator (LS) with an additional 31 tons of unloaded LS in the intermediate $\gamma$-catcher and outer veto volumes. JSNS$^{2}$ has chosen Linear Alkyl Benzene (LAB) as an organic solvent because of its chemical properties. The unloaded LS was produced at a refurbished facility, originally used for scintillator production by the RENO experiment. JSNS$^{2}$ plans to use ISO tanks for the storage and transportation of the LS. In this paper, we describe the LS production, and present measurements of its optical properties and long term stability. Our measurements show that storing the LS in ISO tanks does not result in degradation of its optical properties.Comment: 7 pages, 4 figures

Type I planet migration in nearly laminar disks - long term behavior

We carry out 2-D high resolution numerical simulations of type I planet migration with different disk viscosities. We find that the planet migration is strongly dependent on disk viscosities. Two kinds of density wave damping mechanisms are discussed. Accordingly, the angular momentum transport can be either viscosity dominated or shock dominated, depending on the disk viscosities. The long term migration behavior is different as well. Influences of the Rossby vortex instability on planet migration are also discussed. In addition, we investigate very weak shock generation in inviscid disks by small mass planets and compare the results with prior analytic results.Comment: Accepted for publication in Ap

Double polarization hysteresis loop induced by the domain pinning by defect dipoles in HoMnO3 epitaxial thin films

We report on antiferroelectriclike double polarization hysteresis loops in multiferroic HoMnO3 thin films below the ferroelectric Curie temperature. This intriguing phenomenon is attributed to the domain pinning by defect dipoles which were introduced unintentionally during film growth process. Electron paramagnetic resonance suggests the existence of Fe1+ defects in thin films and first principles calculations reveal that the defect dipoles would be composed of oxygen vacancy and Fe1+ defect. We discuss migration of charged point defects during film growth process and formation of defect dipoles along ferroelectric polarization direction, based on the site preference of point defects. Due to a high-temperature low-symmetry structure of HoMnO3, aging is not required to form the defect dipoles in contrast to other ferroelectrics (e.g., BaTiO3).Comment: 4 figure

Constraints on the R-parity- and Lepton-Flavor-Violating Couplings from B0 Decats to Two Charged Leptons

We derive the upper bounds on certain products of R-parity- and lepton-flavor-violating couplings from the decays of the neutral $B$ meson into two charged leptons. These modes of $B^0$ decays can constrain the product combinations of the couplings with one or more heavy generation indices. We find that most of these bounds are stronger than the previous ones.Comment: Table is changed; version to appear in Phys. Rev.

Global Hilbert Expansion for the Vlasov-Poisson-Boltzmann System

We study the Hilbert expansion for small Knudsen number $\varepsilon$ for the Vlasov-Boltzmann-Poisson system for an electron gas. The zeroth order term takes the form of local Maxwellian: $ F_{0}(t,x,v)=\frac{\rho_{0}(t,x)}{(2\pi \theta_{0}(t,x))^{3/2}} e^{-|v-u_{0}(t,x)|^{2}/2\theta_{0}(t,x)},\text{\ }\theta_{0}(t,x)=K\rho_{0}^{2/3}(t,x).$Our main result states that if the Hilbert expansion is valid at$t=0$for well-prepared small initial data with irrotational velocity$u_0$, then it is valid for$0\leq t\leq \varepsilon ^{-{1/2}\frac{2k-3}{2k-2}},$where$\rho_{0}(t,x)$and$ u_{0}(t,x)$satisfy the Euler-Poisson system for monatomic gas$\gamma=5/3$

Magnetic field dependence of the neutron spin resonance in CeB6

In zero magnetic field, the famous neutron spin resonance in the f-electron superconductor CeCoIn5 is similar to the recently discovered exciton peak in the non-superconducting CeB6. Magnetic field splits the resonance in CeCoIn5 into two components, indicating that it is a doublet. Here we employ inelastic neutron scattering (INS) to scrutinize the field dependence of spin fluctuations in CeB6. The exciton shows a markedly different behavior without any field splitting. Instead, we observe a second field-induced magnon whose energy increases with field. At the ferromagnetic zone center, however, we find only a single mode with a non-monotonic field dependence. At low fields, it is initially suppressed to zero together with the antiferromagnetic order parameter, but then reappears at higher fields inside the hidden-order phase, following the energy of an electron spin resonance (ESR). This is a unique example of a ferromagnetic resonance in a heavy-fermion metal seen by both ESR and INS consistently over a broad range of magnetic fields.Comment: 7 pages, 6 figures including one animation, accepted to Phys. Rev.

High Fidelity Tape Transfer Printing Based On Chemically Induced Adhesive Strength Modulation

Transfer printing, a two-step process (i.e. picking up and printing) for heterogeneous integration, has been widely exploited for the fabrication of functional electronics system. To ensure a reliable process, strong adhesion for picking up and weak or no adhesion for printing are required. However, it is challenging to meet the requirements of switchable stamp adhesion. Here we introduce a simple, high fidelity process, namely tape transfer printing(TTP), enabled by chemically induced dramatic modulation in tape adhesive strength. We describe the working mechanism of the adhesion modulation that governs this process and demonstrate the method by high fidelity tape transfer printing several types of materials and devices, including Si pellets arrays, photodetector arrays, and electromyography (EMG) sensors, from their preparation substrates to various alien substrates. High fidelity tape transfer printing of components onto curvilinear surfaces is also illustrated

Hysteresis of Electronic Transport in Graphene Transistors

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The positive hysteretic phenomena decay with an increase of the number of layers in graphene flakes. Self-heating in helium atmosphere significantly removes adsorbates and reduces positive hysteresis. We also observed negative hysteresis in graphene devices at low temperature. It is also found that an ice layer on/under graphene has much stronger dipole moment than a water layer does. Mobile ions in the electrolyte gate and a polarity switch in the ferroelectric gate could also cause negative hysteresis in graphene transistors. These findings improved our understanding of the electrical response of graphene to its surroundings. The unique sensitivity to environment and related phenomena in graphene deserve further studies on nonvolatile memory, electrostatic detection and chemically driven applications.Comment: 13 pages, 6 Figure