5,688 research outputs found
Standard Chartered Bank: Women on Corporate Boards in India 2010
This first Standard Chartered Bank: Women on Corporate Boards in India 2010
report looks at the representation of women on the boards of India's leading
companies on the Bombay Stock Exchange (BSE-100) . It ranks the companies in
terms of the gender diversity of their boards, with those with the highest
percentage of women on their boards appearing at the top. The report also
examines the general topic of gender diversity on the boards of the BSE-100 by
presenting the findings of interviews with 18 female directors of BSE-100
companies
Precision machining of steel decahedrons
Production of highly accurate decahedron prisms from hardened stainless steel is discussed. Prism is used to check angular alignment of mounting pads of strapdown inertial guidance system. Accuracies obtainable using recommended process and details of operation are described. Photographic illustration of production device is included
Parent-Child Psychotherapeutic Interventions with Vulnerable Clients: Are They Within the Scope of Social Work Practitioners in Barbados?
Avian brood parasitism in a Mediterranean region. hosts and habitat preferences of Common Cuckoos Cuculus canorus
Highly conductive Sb-doped layers in strained Si
The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, ~10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor device
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