A three dimensional infinite wedge shaped solid block sliding into water along an inclined beach

The three dimensional (3D) problem of a solid block sliding into water along an inclined beach is investigated. The main part of the block is an infinite wedge cylinder and the front of the body is part of an elliptical cone. Incompressible velocity potential theory is used together with fully nonlinear boundary conditions. When gravity is ignored, it is found that self-similar solution is possible. The boundary element method is used to solve the problem. The free surface shape is updated together with the potential on the free surface until the flow has become self-similar. Convergence studies are taken with respect to marching step and element size. Simulations are made for different bodies and different beach angles. Extensive results are provided for the pressure as well as the free surface shape, and their implications in physics are discussed

Petrochemistry and mineral chemistry studies on metamorphic ultramafic rocks in Yanghou area, Zhenghe Country, Fujian Province, China

Petrochemistry studies indicate that the Yanghou metamorphic ultramafic rocksare composed of metamorphosed harzburgite and burgite and ultramafic cumulate . Trace element geochemistry and mineral chemistry studies on the metamorphosed harzburgite indicate that it is the relict of the depleted mantle. From systematic studies on petrochemistry , mineral chemistry and geochronology, it s concluded that the Yanghou metamorphic ultramafic rocks are components of Later Sinian-Early Paleozoic ophiolite in South China.岩石化学研究表明, 洋后变质超镁铁岩是由变质方辉橄榄岩和变质超镁铁堆积岩组成。变质方辉橄榄岩的微量元素地球化学及矿物化学特征表明, 应为亏损的残余地慢产物。通过系统的岩石地球化学、矿物化学及年代学研究, 认为洋后变质超镁铁岩可能为华南晚震旦一早古生代的蛇绿岩组成部分。published_or_final_versio

Acupuncture for frozen shoulder

This randomised controlled trial was undertaken to evaluate the effectiveness of acupuncture as a treatment for frozen shoulder. Thirty-five patients with a diagnosis of frozen shoulder were randomly allocated to an exercise group or an exercise plus acupuncture group and treated for a period of 6 weeks. Functional mobility, power, and pain were assessed by a blinded assessor using the Constant Shoulder Assessment, at baseline, 6 weeks and 20 weeks. Analysis was based on the intention-to-treat principle. Compared with the exercise group, the exercise plus acupuncture group experienced significantly greater improvement with treatment. Improvements in scores by 39.8% (standard deviation, 27.1) and 76.4% (55.0) were seen for the exercise and the exercise plus acupuncture groups, respectively at 6 weeks (P=0.048), and were sustained at the 20-week re-assessment (40.3% [26.7] and 77.2% [54.0], respectively; P=0.025). We conclude that the combination of acupuncture with shoulder exercise may offer effective treatment for frozen shoulder.published_or_final_versio

Electrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric melts

P-rich, In-rich and Stoichiometric undoped InP melts have been synthesed by phosphorus in-situ injection method. InP crystal ingots have been grown from these melts by Liquid Encapsulated Czochralski (LEC). Samples from these ingots grown from various Stoichiometric melts have been characterized by Hall Effect and Fourier Transform Infrared (FT-IR) spectroscopy measurements respectively. The Hall Effect measurement results indicate that the net carrier concentration of P-inch undoped InP is higher than that of In-rich and Stoichiometric undoped InP materials. FT-IR spectroscopy measurements reveal that there are intensive absorption peaks which have been proved to be hydrogen related indium vacancy complex V InH 4. By comparing FT-IR spectra, it is found that P-rich InP material has the most intensive absorption peak of V InH 4, while In-rich InP material has the weakest absorption peak.published_or_final_versio

Formation of P In defect in annealed liquid-encapsulated Czochralski InP

Fourier transform infrared spectroscopy measurements have been carried out on liquid-encapsulated Czochralski-grown undoped InP wafers, which reproducibly become semi-insulating upon annealing in an ambient of phosphorus at 800-900°C. The measurements reveal a high concentration of hydrogen complexes in the form V InH 4 existing in the material before annealing in agreement with recent experimental studies. It is argued that the dominant and essential process producing the semi-insulating behavior is the compensation produced by an EL 2-like deep donor phosphorus antisite defect, which is formed by the dissociation of the hydrogen complexes during the process of annealing. The deep donor compensates acceptors, the majority of which are shallow residual acceptor impurities and deep hydrogen associated V In and isolated V In levels, produced at the first stage of the dissociation of the V InH 4 complex. The high concentration of indium vacancies produced by the dissociation are the precursor of the EL 2-like phosphorus antisite. These results show the importance of hydrogen on the electrical properties of InP and indicate that this largely results from low formation energy of the complex V InH 4 in comparison with that of an isolated V In. © 1998 American Institute of Physics.published_or_final_versio

Ciliary ultrastructural abnormalities in Chinese patients with bronchiectasis

Conference Theme: Challenges to specialists in the 21st centurypublished_or_final_versio

Compensation defects in annealed undoped liquid encapsulated Czochralski InP

As-grown undoped n-type semiconducting and annealed undoped semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction SI InP can frequently be obtained by annealing undoped LEC InP. This is caused by a high concentration of thermally induced native acceptor defects. In some cases, it can be shown that the thermally induced n-type SI property of undoped LEC InP is caused by a midgap donor compensating for the net shallow acceptors. The midgap donor is proposed to be a phosphorus antisite related defect. Traps in annealed SI InP have been detected by photocurrent spectroscopy and have been compared with reported results. The mechanisms of defect formation are discussed. © 1999 American Institute of Physics.published_or_final_versio

Determination of the tension softening curve of nuclear graphites using the incremental displacement collocation method

postprin

Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP

The concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.published_or_final_versio