Thermodynamics of the Mg-B system: Implications for the deposition of MgB2 thin films

We have studied thermodynamics of the Mg-B system with the modeling technique CALPHAD using a computerized optimization procedure. Temperature-composition, pressure-composition, and pressure-temperature phase diagrams under different conditions are obtained. The results provide helpful insights into appropriate processing conditions for thin films of the superconducting phase, MgB2, including the identification of the pressure/temperature region for adsorption-controlled growth. Due to the high volatility of Mg, MgB2 is thermodynamically stable only under fairly high Mg overpressures for likely growth temperatures. This constraint places severe temperature constraints on deposition techniques employing high vacuum conditions

Lifshitz transition from valence fluctuations in YbAl3

In Kondo lattice systems with mixed valence, such as YbAl3, interactions between localized electrons in a partially filled f shell and delocalized conduction electrons can lead to fluctuations between two different valence configurations with changing temperature or pressure. The impact of this change on the momentum-space electronic structure and Fermi surface topology is essential for understanding their emergent properties, but has remained enigmatic due to a lack of appropriate experimental probes. Here by employing a combination of molecular beam epitaxy (MBE) and in situ angle-resolved photoemission spectroscopy (ARPES) we show that valence fluctuations can lead to dramatic changes in the Fermi surface topology, even resulting in a Lifshitz transition. As the temperature is lowered, a small electron pocket in YbAl3 becomes completely unoccupied while the low-energy ytterbium (Yb) 4f states become increasingly itinerant, acquiring additional spectral weight, longer lifetimes, and well-defined dispersions. Our work presents the first unified picture of how local valence fluctuations connect to momentum space concepts including band filling and Fermi surface topology in the longstanding problem of mixed-valence systems.Comment: 18 pages, 11 figure

Formation and observation of a quasi-two-dimensional dxyd_{xy} electron liquid in epitaxially stabilized Sr2−x_{2-x}Lax_{x}TiO4_{4} thin films

We report the formation and observation of an electron liquid in Sr$_{2-x}$La$_{x}$TiO$_4$, the quasi-two-dimensional counterpart of SrTiO$_3$, through reactive molecular-beam epitaxy and {\it in situ} angle-resolved photoemission spectroscopy. The lowest lying states are found to be comprised of Ti 3$d_{xy}$ orbitals, analogous to the LaAlO$_3$/SrTiO$_3$ interface and exhibit unusually broad features characterized by quantized energy levels and a reduced Luttinger volume. Using model calculations, we explain these characteristics through an interplay of disorder and electron-phonon coupling acting co-operatively at similar energy scales, which provides a possible mechanism for explaining the low free carrier concentrations observed at various oxide heterostructures such as the LaAlO$_3$/SrTiO$_3$ interface

Growth and Investigation of Nd_{1-x}Sm_{x}ScO_{3} and Sm_{1-x}Gd_{x}ScO_{3} Solid-Solution Single Crystals

The pseudo-cubic lattice parameters of rare-earth (RE) scandate, REScO3, single crystals grown by the Czochralski technique with RE=Dy to Pr lie between about 3.95 and 4.02 Angstrom. These crystals are the only available perovskite substrates in this lattice constant range that can withstand virtually any thin film growth conditions. Two members of this series, PmScO3 and EuScO3, are, however, not suitable for substrate applications. Because the pseudo-cubic lattice parameters between neighbouring REScO3 compounds decrease with rising atomic number of the RE in about 0.01 Angstrom steps, the unsuitability of PmScO3 (radioactivity) and EuScO3 (incompatibility with Si) causes an interruption in this lattice spacing sequence. To replace them, solid solutions of their adjacent rare-earth scandates, i.e., (Nd0.5Sm0.5)ScO3 and (Sm0.5Gd0.5)ScO3, were grown by the Czochralski method. Their average pseudo-cubic lattice parameters of 3.9979 Angstrom and 3.9784 Angstrom are very close to those of PmScO3 and EuScO3, respectively, and they show very low segregation. These qualities make these solid solutions excellent substitutes for PmScO3 and EuScO3.Comment: 16 pages, 6 figures, 6 table

Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure

We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO_3, SrZrO_3, LaHoO_3, and LaYO_3 are among the most promising candidates for high-K dielectrics among the compounds we considered.Comment: 17 pages, 9 figures, 4 tables. Supplementary information: http://link.aps.org/supplemental/10.1103/PhysRevB.82.064101 or http://www.physics.rutgers.edu/~sinisa/highk/supp.pd

TiO2/Ferroelectric Heterostructures as Dynamic Polarization-Promoted Catalysts for Photochemical and Electrochemical Oxidation of Water

Using first-principles density functional theory calculations, we explore the chemical activity of epitaxial heterostructures of TiO2 anatase on strained polar SrTiO3 films focusing on the oxygen evolution reaction (OER), the bottleneck of water splitting. Our results show that the reactivity of the TiO2 surface is tuned by electric dipoles dynamically induced by the adsorbed species during the intermediate steps of the reaction while the initial and final steps remain unaffected. Compared to the OER on unsupported TiO2, the combined effects of the dynamically induced dipoles and epitaxial strain strongly reduce rate-limiting thermodynamic barriers and significantly improve the efficiency of the reaction.open5

Localized excited charge carriers generate ultrafast inhomogeneous strain in the multiferroic BiFeO3_3

We apply ultrafast X-ray diffraction with femtosecond temporal resolution to monitor the lattice dynamics in a thin film of multiferroic BiFeO$_3$ after above-bandgap photoexcitation. The sound-velocity limited evolution of the observed lattice strains indicates a quasi-instantaneous photoinduced stress which decays on a nanosecond time scale. This stress exhibits an inhomogeneous spatial profile evidenced by the broadening of the Bragg peak. These new data require substantial modification of existing models of photogenerated stresses in BiFeO$_3$: the relevant excited charge carriers must remain localized to be consistent with the data