Investigating the sterile neutrino parameters with QLC in 3 + 1 scenario

In the scenario with four generation quarks and leptons and using a 3 + 1 neutrino model having one sterile and the three standard active neutrinos with a $4 \times 4$ unitary transformation matrix, $U_{PMNS_{4}}$, we perform a model-based analysis using the latest global data and determine bounds on the sterile neutrino parameters i.e. the neutrino mixing angles. Motivated by our previous results, where, in a quark-lepton complementarity (QLC) model we predicted the values of $\theta_{13}^{PMNS}=(9_{-2}^{+1})^{\circ}$ and $\theta_{23}^{PMNS}=(40.60_{-0.3}^{+0.1})^{\circ}$. In the QLC model the non-trivial correlation between $CKM_4$ and $PMNS_4$ mixing matrix is given by the correlation matrix $V_{c_{4}}$. Monte Carlo simulations are performed to estimate the texture of $V_{c4}$ followed by the calculation of $PMNS_4$ using the equation, $U_{PMNS_{4}}= (U_{CKM_{4}} . \psi_{4})^{-1}.V_{c_{4}}$, where $\psi_{4}$ is a diagonal phase matrix. The sterile neutrino mixing angles, $\theta_{14}^{PMNS}$, $\theta_{24}^{PMNS}$ and $\theta_{34}^{PMNS}$ are assumed to be freely varying between $(0-\pi/4)$ and obtained results which are consistent with the data available from various experiments, like No$\nu$A, MINOS, SuperK, Ice Cube-DeepCore. In further investigation, we analytically obtain approximately similar ranges for various neutrino mixing parameters $\mid{ U_{\mu 4}}\mid ^2$ and $\mid{ U_{\tau 4}}\mid ^2$.Comment: 16 pages, 4 tables, 7 figures(with subfigures, total 14 figures

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device

Maladaptive cognitive appraisals in children with high-functioning autism : associations with fear, anxiety and theory of mind

Despite the well-documented success of cognitive restructuring techniques in the treatment of anxiety disorders, there is still little clarity on which cognitions underpin fear and anxiety in children with high-functioning spectrum disorders (HFASD). This study examined whether certain cognitive appraisals, known to be associated with fear and anxiety in non-HFASD groups, may help explain these emotions in children with HFASD. It also investigated relations between these cognitive appraisals and theory-of-mind (TOM). Using a vignette approach, appraisals, fear and anxiety were assessed in 22 children with HFASD and 22 typically developing (TD) children. The two groups differed significantly on all four appraisal types. Anxiety was negatively correlated with future expectancy and positively with problem-focused coping potential in the HFASD group, but was not correlated with appraisals in the TD group. Emotion-focused coping potential was the only appraisal correlated with fear in the HFASD group and only self-accountability in the TD group. Linear regression analysis found appraisals of emotion-focused coping potential, problem-focused coping potential and future expectancy to be significant predictors of TOM ability in the HFASD group. These findings indicate that specific, problematic patterns of appraisal may characterise children with HFASD

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

The processing of wafer devices to form multilevel interconnects for microelectronic circuits is described. The method is directed to performing the sequential steps of etching the via, removing the photo resist pattern, back sputtering the entire wafer surface and depositing the next layer of interconnect material under common vacuum conditions without exposure to atmospheric conditions. Apparatus for performing the method includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a DC magnetron sputtering system. A gas inlet is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps