Two-Dimensional Group-10 Noble-Transition-Metal Dichalcogenides Photodetector

2D Transition-Metal Dichalcogenides (TMDs) have been widely considered as a promising material for future optoelectronics due to the strong light-matter interaction, fantastic electronic properties and environmental stability. However, the relatively large bandgap and low mobility of conventional TMDs (such as MoS2 and WS2) limit their applications in infra optoelectronics and high-speed photodetection. In this chapter, we introduce a new type of group-10 noble TMDs (NTMDs), which exhibit outstanding properties such as unique structural phase, widely tunable energy gap and high mobility. Till now, various NTMDs-based photodetectors have been realized with ultrabroad detection waveband (200 nm to 10.6 μm), fast response time, high responsivity and detectivity, and polarization sensitivity. NTMDs have been excellent potential candidates for next-generation photodetection devices with high-performance, wafer-scalability and flexibility

(Invited) Solution Exfoilated Black Phosphorus and Its Applications

Black phosphorus (BP), has recently attracted much attention all over the world and shown great potential in novel nanoelectronics owing to its direct and narrow bandgap. Regarding to the scale production of BP and its related electronic devices, solution exfoliation reveals superior advances when compared with mechanical exfoliation. Remarkably, liquid-phase exfoliated BP flakes and quantum dots (QDs) exhibit exciting properties in solar cells, electronic, and optical devices. The exfoliation of BP in diverse solvents have been demonstrated. The solution exfoilated BP flakes can be an effective electron transport layer in organic photovotaics (OPVs). The BP QDs can be incorporated in the active layer of OPV to enhance its power conversion efficiencies. In addition, the BP flakes exhibit nonlinear opical properties which can be an excellent saturable absorber for high energy pulse generation in fiber laser. </jats:p

Effect of impurities on the Raman scattering of 6H-SiC crystals

Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type

Probing the waveguiding properties of quasi-2D organic semiconductor through optical imaging

Abstract Though there have been many investigations focusing on organic semiconductors, how to fully probe their waveguiding properties is still rarely reported. In this work, the light propagation loss in the Znq2 samples was detected by a modified light transmission path. The results showed that the optical propagation loss coefficient of Znq2 nanorods is ∼0.16 dB μm−1. Our work fully reveals the waveguiding properties in 2D organic semiconductor by 2D &amp; 3D imaging, which may offer a new reference for exploring novel optical properties of 2D organic semiconductors.</jats:p

Probing the waveguiding properties of quasi-2D organic semiconductor through optical imaging

Though there have been many investigations focusing on organic semiconductors, how to fully probe their waveguiding properties is still rarely reported. In this work, the light propagation loss in the Znq _2 samples was detected by a modified light transmission path. The results showed that the optical propagation loss coefficient of Znq _2 nanorods is ∼0.16 dB μ m ^−1 . Our work fully reveals the waveguiding properties in 2D organic semiconductor by 2D & 3D imaging, which may offer a new reference for exploring novel optical properties of 2D organic semiconductors