Analysis of defect structure in silicon. Characterization of samples from UCP ingot 5848-13C

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13 C. Important trends were noticed between the measured data, cell efficiency, and diffusion length. Grain boundary substructure appears to have an important effect on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements give statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for QTM analysis was perfected

Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density

Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons

Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with large surface-to-volume ratios and highly controlled stoichiometry. Se vacancies in Bi2Se3 give rise to bulk conduction, which masks the transport properties of the surface states. We have therefore developed a new route for the synthesis of topological insulator nanostructures using metalorganic chemical vapour deposition (MOCVD). MOCVD allows for control of the Se/Bi flux ratio during growth. With the aim of rational growth, we vary the Se/Bi flux ratio, growth time, and substrate temperature, and observe morphological changes which indicate a growth regime in which nanoribbon formation is limited by the Bi precursor mass-flow. MOCVD growth of Bi2Se3 nanostructures occurs via a distinct growth mechanism that is nucleated by gold nanoparticles at the base of the nanowire. By tuning the reaction conditions, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets.Comment: Related papers at http://pettagroup.princeton.ed

Development and operation of research-scale III-V nanowire growth reactors

III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups. We developed hot-wall and cold-wall metal organic vapor phase epitaxy (MOVPE) reactors for the growth of InAs nanowires, which both use the same gas handling system. The hot-wall reactor is based on an inexpensive quartz tube furnace and yields InAs nanowires for a narrow range of operating conditions. Improvement of crystal quality and an increase in growth run to growth run reproducibility are obtained using a homebuilt UHV cold-wall reactor with a base pressure of 2 X 10$^{-9}$ Torr. A load-lock on the UHV reactor prevents the growth chamber from being exposed to atmospheric conditions during sample transfers. Nanowires grown in the cold-wall system have a low defect density, as determined using transmission electron microscopy, and exhibit field effect gating with mobilities approaching 16,000 cm$^2$(V.s).Comment: Related papers at http://pettagroup.princeton.ed

Correcting for Distortions due to Ionization in the STAR TPC

Physics goals of the STAR Experiment at RHIC in recent (and future) years drive the need to operate the STAR TPC at ever higher luminosities, leading to increased ionization levels in the TPC gas. The resulting ionic space charge introduces field distortions in the detector which impact tracking performance. Further complications arise from ionic charge leakage into the main TPC volume from the high gain anode region. STAR has implemented corrections for these distortions based on measures of luminosity, which we present here. Additionally, we highlight a novel approach to applying the corrections on an event-by-event basis applicable in conditions of rapidly varying ionization sources.Comment: 6 pages, 7 figures, proceedings of the Workshop on Tracking in High Multiplicity Environments (TIME 05) in Zurich, Switzerland, submitted to Nucl. Instr. and Meth.

V1647 Ori (IRAS 05436-0007) in Outburst: the First Three Months

We report on photometric (BVRIJHK) and low dispersion spectroscopic observations of V1647 Ori, the star that drives McNeil's Nebula, between 10 February and 7 May 2004. The star is photometrically variable atop a general decline in brightness of about 0.3-0.4 magnitudes during these 87 days. The spectra are featureless, aside from H-alpha and the Ca II infrared triplet in emission, and a Na I D absorption feature. The Ca II triplet line ratios are typical of young stellar objects. The H-alpha equivalent width may be modulated on a period of about 60 days. The post-outburst extinction appears to be less than 7 mag. The data are suggestive of an FU Orionis-like event, but further monitoring will be needed to definitively characterize the outburst.Comment: Accepted for publication in the Astronomical Journa

Topological Homogeneity for Electron Microscopy Images

In this paper, the concept of homogeneity is defined, from a topological perspective, in order to analyze how uniform is the material composition in 2D electron microscopy images. Topological multiresolution parameters are taken into account to obtain better results than classical techniques.Ministerio de Economía y Competitividad MTM2016-81030-PMinisterio de Economía y Competitividad TEC2012-37868-C04-0

Compositional ordering in semiconductor alloys

Journal ArticleCompositional ordering has been observed in a wide variety of III/V semiconductor alloys as well as in SiGe alloys. The thermodynamic driving force is now understood in terms of minimization of the microscopic strain energy of the bonds in the solid. However, the mechanism leading to the specific ordered structures formed is only now beginning to be understood

Bandgap control of GaInP using Sb as a surfactant

Journal ArticleThe use of surfactants to control specific aspects of the vapor-phase epitaxial growth process is beginning to be studied for both the elemental and III/V semiconductors. To date, most reported surfactant effects for semiconductors relate to the morphology of the growing films. However, semiconductor alloys with CuPt ordering exhibit much more dramatic effects. The change in the CuPt order parameter induced by the surfactant translates into a marked change in the band-gap energy. Previous work concentrated on the effects of the donor tellurium. Te is less than ideal as a surfactant, since the change in band-gap energy is coupled to a large change in the conductivity. This letter presents the results of a study of the effects of an isoelectronic surfactant on the ordering process in GaInP. Sb has been found to act as a surfactant during organometallic vapor-phase epitaxial growth. At an estimated Sb concentration in the solid of 1_x0002_10_x0003_4, order is eliminated, as indicated by the band-gap energy. Surface photoabsorption _x0002_SPA_x0003_ data indicate that the effect is due to a change in the surface reconstruction. Adding Sb leads to attenuation of the peak at 400 nm in the SPA spectrum associated with _x0004_1¯ 10_x0005_ P dimers. The addition of Sb during the growth cycle has been used to produce a heterostructure with a 135 meV band-gap difference between two layers with the same solid composition

Miscibility gaps and spinodal decomposition in III/V quaternary alloys of the type AxByC1−x−yD

Journal ArticleThermodynamic concepts have been developed for the calculation of solid-phase miscibility gaps and spinodal decomposition in quaternary alloys of the type AxByC1−x−yD. These concepts have been applied to the analysis of III/V quaternary alloys using the delta-lattice-parameter (DLP) solution model. In addition, the effects of coherency strain energy have been included in the calculation. Results are presented for the systems AlxGayIn1−x−yP, AlxGayIn1−x−yAs, InPxAsySb1−x−y, and GaPxAsySb1−x−y. Even though these systems all have miscibility gaps, they are shown to be stable against spinodal decomposition at all temperatures due to the elastic strain energy inherent in coherent decomposition of single crystalline alloys. Journal of Applied Physics is copyrighted by The American Institute of Physics